TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power
参数名称 | 属性值 |
厂商名称 | NXP(恩智浦) |
包装说明 | FLANGE MOUNT, R-CDFM-F2 |
针数 | 2 |
Reach Compliance Code | unknown |
其他特性 | HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS |
外壳连接 | BASE |
配置 | SINGLE |
最高频带 | S BAND |
JESD-30 代码 | R-CDFM-F2 |
元件数量 | 1 |
端子数量 | 2 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | NPN |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | FLAT |
端子位置 | DUAL |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
BLS3135-20TRAY | 934055937114 | |
---|---|---|
描述 | TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power | TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power |
厂商名称 | NXP(恩智浦) | NXP(恩智浦) |
包装说明 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 |
针数 | 2 | 2 |
Reach Compliance Code | unknown | unknown |
其他特性 | HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS | HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS |
外壳连接 | BASE | BASE |
配置 | SINGLE | SINGLE |
最高频带 | S BAND | S BAND |
JESD-30 代码 | R-CDFM-F2 | R-CDFM-F2 |
元件数量 | 1 | 1 |
端子数量 | 2 | 2 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | NPN | NPN |
认证状态 | Not Qualified | Not Qualified |
表面贴装 | YES | YES |
端子形式 | FLAT | FLAT |
端子位置 | DUAL | DUAL |
晶体管应用 | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved