BCV65
NPN/PNP general-purpose transistor
Rev. 4 — 27 July 2010
Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose transistor in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pair
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
= 5 V; I
C
= 2 mA
Conditions
open base
Min
-
-
75
Typ
-
-
-
Max
30
100
800
Unit
V
mA
Per transistor; for the PNP transistor with negative polarity
2. Pinning information
Table 2.
Pin
1, 3
2
4
Pinning
Description
collector
common base
common emitter
2
1
2
4
4
3
1
Simplified outline
Graphic symbol
3
006aab229
NXP Semiconductors
BCV65
NPN/PNP general-purpose transistor
3. Ordering information
Table 3.
Ordering information
Package
Name
BCV65
-
Description
plastic surface-mounted package; 4 leads
Version
SOT143B
Type number
4. Marking
Table 4.
BCV65
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
97*
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
I
C
I
CM
I
BM
Per device
P
tot
T
j
T
amb
T
stg
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
≤
25
°C
-
-
−65
−65
250
150
+150
+150
mW
°C
°C
°C
Parameter
collector-base voltage
collector-emitter voltage
collector current
peak collector current
peak base current
Conditions
open emitter
open base
Min
-
-
-
-
-
Max
30
30
100
200
200
Unit
V
V
mA
mA
mA
Per transistor; for the PNP transistor with negative polarity
BCV65
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
2 of 11
NXP Semiconductors
BCV65
NPN/PNP general-purpose transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
Conditions
[1]
Min
-
Typ
-
Max
500
Unit
K/W
thermal resistance from junction in free air
to ambient
Device mounted on an FR4 Printed-Circuit Board (PCB).
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off
current
DC current gain
collector-emitter
saturation voltage
Conditions
V
CB
= 30 V; I
E
= 0 A
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
°C
V
CE
= 5 V; I
C
= 2 mA
I
C
= 10 mA;
I
B
= 0.5 mA
I
C
= 100 mA;
I
B
= 5 mA
V
BEsat
base-emitter saturation I
C
= 10 mA;
voltage
I
B
= 0.5 mA
I
C
= 100 mA;
I
B
= 5 mA
V
BE
base-emitter voltage
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA;
V
CE
= 5 V
[1]
[2]
[1]
Min
-
-
75
-
-
-
-
580
-
Typ
-
-
-
90
250
700
900
650
-
Max
15
5
800
300
650
-
-
750
820
Unit
nA
μA
Per transistor; for the PNP transistor with negative polarity
h
FE
V
CEsat
mV
mV
mV
mV
mV
mV
[1]
[2]
[2]
V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
V
BE
decreases by about 2 mV/K with increasing temperature.
BCV65
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
3 of 11
NXP Semiconductors
BCV65
NPN/PNP general-purpose transistor
600
h
FE
500
(1)
mgt727
1200
V
BE
(mV)
1000
(1)
mgt728
400
(2)
800
(2)
300
600
(3)
200
(3)
400
100
200
0
10
−1
1
10
10
2
I
C
(mA)
10
3
0
10
−2
10
−1
1
10
10
2
10
3
I
C
(mA)
V
CE
= 5 V
(1) T
amb
= 150
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
V
CE
= 5 V
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 150
°C
Fig 1.
TR1 (NPN): DC current gain as a function of
collector current; typical values
10
4
mgt729
Fig 2.
TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
mgt730
1200
V
BEsat
(mV)
1000
(1)
V
CEsat
(mV)
10
3
800
(2)
600
(3)
10
2
(1)
(3) (2)
400
200
10
10
−1
1
10
10
2
I
C
(mA)
10
3
0
10
−1
1
10
10
2
I
C
(mA)
10
3
I
C
/I
B
= 20
(1) T
amb
= 150
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
I
C
/I
B
= 10
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 150
°C
Fig 3.
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 4.
TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
BCV65
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
4 of 11
NXP Semiconductors
BCV65
NPN/PNP general-purpose transistor
1000
h
FE
800
mgt715
−1200
V
BE
(mV)
−1000
−800
(1)
mgt716
600
(1)
(2)
−600
−400
−200
(3)
400
(2)
200
(3)
0
−10
−2
−10
−1
−1
−10
−10
2
−10
3
I
C
(mA)
0
−10
−2
−10
−1
−1
−10
−10
2
−10
3
I
C
(mA)
V
CE
=
−5
V
(1) T
amb
= 150
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
V
CE
=
−5
V
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 150
°C
Fig 5.
TR2 (PNP): DC current gain as a function of
collector current; typical values
mgt717
Fig 6.
TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
mgt718
−10
4
V
CEsat
(mV)
−10
3
−1200
V
BEsat
(mV)
−1000
(1)
−800
(2)
−600
(3)
−10
2
(1)
−400
−200
(3) (2)
−10
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
0
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
I
C
/I
B
= 20
(1) T
amb
= 150
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
I
C
/I
B
= 20
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 150
°C
Fig 7.
TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8.
TR2 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
BCV65
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
5 of 11
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