74AHC1G86-Q100;
74AHCT1G86-Q100
2-input EXCLUSIVE-OR gate
Rev. 1 — 16 July 2012
Product data sheet
1. General description
74AHC1G86-Q100 and 74AHCT1G86-Q100 are high-speed Si-gate CMOS devices.
They provide a 2-input EXCLUSIVE-OR function.
The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.
The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from
40 C
to +85
C
and from
40 C
to +125
C
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0
)
SOT353-1 and SOT753 package options
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74AHC1G86GW-Q100
74AHCT1G86GW-Q100
74AHC1G86GV-Q100
74AHCT1G86GV-Q100
40 C
to +125
C
40 C
to +125
C
Name
Description
Version
SOT353-1
SOT753
TSSOP5 plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
SC-74A
plastic surface-mounted package; 5 leads
Type number
NXP Semiconductors
74AHC1G86-Q100; 74AHCT1G86-Q100
2-input EXCLUSIVE-OR gate
4. Marking
Table 2.
Marking codes
Marking code
[1]
AH
CH
A86
C86
Type number
74AHC1G86GW-Q100
74AHCT1G86GW-Q100
74AHC1G86GV-Q100
74AHCT1G86GV-Q100
[1]
The pin 1 indicator is on the lower left corner of the device, below the marking code.
5. Functional diagram
1
2
B
A
Y
4
1
2
=1
mna039
4
mna038
Fig 1. Logic symbol
Fig 2. IEC logic symbol
B
Y
A
mna040
Fig 3. Logic diagram
6. Pinning information
6.1 Pinning
$+&*4
$+&7*4
%
$
*1'
DDD
9
&&
<
Fig 4. Pin configuration
74AHC_AHCT1G86_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 16 July 2012
2 of 13
NXP Semiconductors
74AHC1G86-Q100; 74AHCT1G86-Q100
2-input EXCLUSIVE-OR gate
6.2 Pin description
Table 3.
Symbol
B
A
GND
Y
V
CC
Pin description
Pin
1
2
3
4
5
Description
data input
data input
ground (0 V)
data output
supply voltage
7. Functional description
Table 4.
Function table
H = HIGH voltage level; L = LOW voltage level
Inputs
A
L
L
H
H
B
L
H
L
H
Output
Y
L
H
H
L
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
V
I
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
Min
0.5
0.5
Max
+7.0
+7.0
-
20
25
75
-
+150
250
Unit
V
V
mA
mA
mA
mA
mA
C
mW
V
I
<
0.5
V
V
O
<
0.5
V or V
O
> V
CC
+ 0.5 V
0.5
V < V
O
< V
CC
+ 0.5 V
[1]
20
-
-
-
75
65
T
amb
=
40 C
to +125
C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For both TSSOP5 and SC-74A packages: above 87.5
C
the value of P
tot
derates linearly with 4.0 mW/K.
74AHC_AHCT1G86_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 16 July 2012
3 of 13
NXP Semiconductors
74AHC1G86-Q100; 74AHCT1G86-Q100
2-input EXCLUSIVE-OR gate
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
t/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise
and fall rate
V
CC
= 3.3 V
0.3 V
V
CC
= 5.0 V
0.5 V
Conditions
74AHC1G86-Q100
Min
2.0
0
0
40
-
-
Typ
5.0
-
-
+25
-
-
Max
5.5
5.5
V
CC
+125
100
20
74AHCT1G86-Q100
Min
4.5
0
0
40
-
-
Typ
5.0
-
-
+25
-
-
Max
5.5
5.5
V
CC
+125
-
20
V
V
V
C
ns/V
ns/V
Unit
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
For type 74AHC1G86-Q100
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 5.5 V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 5.5 V
V
OH
HIGH-level
V
I
= V
IH
or V
IL
output voltage
I
O
=
50 A;
V
CC
= 2.0 V
I
O
=
50 A;
V
CC
= 3.0 V
I
O
=
50 A;
V
CC
= 4.5 V
I
O
=
4.0
mA; V
CC
= 3.0 V
I
O
=
8.0
mA; V
CC
= 4.5 V
V
OL
LOW-level
V
I
= V
IH
or V
IL
output voltage
I
O
= 50
A;
V
CC
= 2.0 V
I
O
= 50
A;
V
CC
= 3.0 V
I
O
= 50
A;
V
CC
= 4.5 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
O
= 8.0 mA; V
CC
= 4.5 V
I
I
I
CC
C
I
input leakage
current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
1.5
2.1
3.85
-
-
-
1.9
2.9
4.4
2.58
3.94
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.0
3.0
4.5
-
-
0
0
0
-
-
-
-
1.5
-
-
-
0.5
0.9
1.65
-
-
-
-
-
0.1
0.1
0.1
0.36
0.36
0.1
1.0
10
1.5
2.1
3.85
-
-
-
1.9
2.9
4.4
2.48
3.8
-
-
-
-
-
-
-
-
-
-
-
0.5
0.9
1.65
-
-
-
-
-
0.1
0.1
0.1
0.44
0.44
1.0
10
10
1.5
2.1
3.85
-
-
-
1.9
2.9
4.4
2.40
3.70
-
-
-
-
-
-
-
-
-
-
-
0.5
0.9
1.65
-
-
-
-
-
0.1
0.1
0.1
0.55
0.55
2.0
40
10
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
pF
25
C
Typ
Max
40 C
to +85
C 40 C
to +125
C
Unit
Min
Max
Min
Max
supply current V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
input
capacitance
74AHC_AHCT1G86_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 16 July 2012
4 of 13
NXP Semiconductors
74AHC1G86-Q100; 74AHCT1G86-Q100
2-input EXCLUSIVE-OR gate
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
For type 74AHCT1G86-Q100
V
IH
V
IL
V
OH
HIGH-level
input voltage
LOW-level
input voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
2.0
-
-
-
-
0.8
2.0
-
-
0.8
2.0
-
-
0.8
V
V
25
C
Typ
Max
40 C
to +85
C 40 C
to +125
C
Unit
Min
Max
Min
Max
HIGH-level
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
output voltage
I
O
=
50 A
I
O
=
8.0
mA
LOW-level
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
output voltage
I
O
= 50
A
I
O
= 8.0 mA
input leakage
current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
4.4
3.94
-
-
-
-
-
4.5
-
0
-
-
-
-
-
-
0.1
0.36
0.1
1.0
1.35
4.4
3.8
-
-
-
-
-
-
-
0.1
0.44
1.0
10
1.5
4.4
3.70
-
-
-
-
-
-
-
0.1
0.55
2.0
40
1.5
V
V
V
V
A
A
mA
V
OL
I
I
I
CC
I
CC
supply current V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
additional
per input pin; V
I
= 3.4 V;
supply current other inputs at V
CC
or GND;
I
O
= 0 A; V
CC
= 5.5 V
input
capacitance
C
I
-
1.5
10
-
10
-
10
pF
11. Dynamic characteristics
Table 8.
Dynamic characteristics
GND = 0 V; t
r
= t
f
=
3.0 ns. For waveform see
Figure 5.
For test circuit see
Figure 6.
Symbol Parameter
Conditions
Min
For type 74AHC1G86-Q100
t
pd
propagation
delay
A and B to Y
V
CC
= 3.0 V to 3.6 V
C
L
= 15 pF
C
L
= 50 pF
V
CC
= 4.5 V to 5.5 V
C
L
= 15 pF
C
L
= 50 pF
C
PD
power
dissipation
capacitance
per buffer;
C
L
= 50 pF; f = 1 MHz;
V
I
= GND to V
CC
[4]
[3]
[1]
[2]
25
C
Typ
Max
40 C
to +85
C 40 C
to +125
C
Unit
Min
Max
Min
Max
-
-
-
-
-
4.0
5.8
3.4
4.9
9
11.0
14.5
6.8
8.8
-
1.0
1.0
1.0
1.0
-
13.0
16.5
8.0
10.0
-
1.0
1.0
1.0
1.0
-
14.0
18.5
8.5
11.5
-
ns
ns
ns
ns
pF
74AHC_AHCT1G86_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 16 July 2012
5 of 13
MEMS传感器
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