DISCRETE SEMICONDUCTORS
DATA SHEET
MAC223A8X
Triacs
Product
specification
September 2002
NXP
Semiconductors
Product specification
Triacs
MAC223A8X
GENERAL DESCRIPTION
Passivated triac in a full pack, plastic
envelope, intended for use in applications
requiring high bidirectional transient and
blocking voltage capability and high thermal
cycling performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600
20
230
UNIT
V
A
A
PINNING - SOT186A
PIN
1
2
3
DESCRIPTION
main terminal 1
PIN CONFIGURATION
case
SYMBOL
T2
main terminal 2
gate
1 2 3
T1
case isolated
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
It
dI
T
/dt
2
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I t for fusing
Repetitive rate of rise of
on-state current after
triggering
2
CONDITIONS
MIN.
-
MAX.
600
1
20
230
180
50
50
50
10
2
5
5
0.5
150
125
UNIT
V
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
full sine wave; T
hs
≤
25 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 16.7 ms
t = 10 ms
I
TM
= 30 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
-
-
-
-40
-40
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
September 2002
1
Rev 1.000
NXP
Semiconductors
Product specification
Triacs
MAC223A8X
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance
junction heatsink
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
3.85
5.5
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
C
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+
T2-
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
0.25
-
TYP.
6
10
11
23
8
30
18
15
7
12
1.3
0.7
0.4
0.1
MAX.
50
50
50
75
40
60
40
60
30
30
1.55
1.5
-
0.5
UNIT
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 30 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 ˚C
V
D
= V
DRM(max)
; T
j
= 125 ˚C
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
dV
com
/dt
t
gt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform; gate open circuit
V
DM
= 400 V; T
j
= 95 ˚C; I
T(RMS)
= 25 A;
dI
com
/dt = 9 A/ms; gate open circuit
I
TM
= 30 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/µs
MIN.
100
-
-
TYP.
300
10
2
MAX.
-
-
-
UNIT
V/µs
V/µs
µs
September 2002
2
Rev 1.000
NXP
Semiconductors
Product specification
Triacs
MAC223A8X
30
Ptot (W)
Ths(max) (°C)
= 180
1
10
IT (RMS) (A)
25
120
90
60
30
48
20
15
20
10
87
10
5
0
0
5
10
15
125
20
25
IT(RMS) (A)
0
-50
0
50
100
Ths (°C)
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
ITSM / A
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus heatsink temperature T
hs
.
IT(RMS) / A
1000
50
40
30
100
dI
T
/dt limit
T2- G+ quadrant
IT
T
10
10us
I TSM
time
20
10
Tj initial = 25 C max
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
IT
150
T
ITSM
time
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
hs
≤
91˚C.
VGT(Tj)
VGT(25 C)
200
1.6
1.4
1.2
1
0.8
Tj initial = 25 C max
100
50
0.6
0
1
10
100
Number of cycles at 50Hz
1000
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
September 2002
3
Rev 1.000
NXP
Semiconductors
Product specification
Triacs
MAC223A8X
5
4
3
IGT(Tj)
IGT(25 C)
T2+ G+
T2+ G-
T2- G-
T2- G+
80
70
IT / A
Tj = 125 C
Tj = 25 C
BTA140
60
Vo = 1.073 V
50
40
typ
max
Rs = 0.015 ohms
2
1
30
20
10
0
-50
0
50
Tj / C
100
150
0
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3
2.5
2
1.5
1
10
Zth j-hs (K/W)
with heatsink compound
without heatsink compound
unidirectional
bidirectional
1
0.1
P
D
tp
0.01
0.5
0
-50
0.001
10us
0.1ms
1ms
10ms
0.1s
1s
t
0
50
Tj / C
100
150
10s
t p (s)
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-hs
, versus
pulse width t
p
.
dV/dt (V/us)
1000
3
2.5
2
1.5
1
0.5
off-state dV/dt limit
100
10
dIcom/dt =
25 A/ms
20
15
12
9.0
7.0
0
-50
0
50
Tj / C
100
150
1
0
50
Tj / C
100
150
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
T
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
September 2002
4
Rev 1.000
ARM技术
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