DATA SHEET
GaAs INTEGRATED CIRCUIT
µ
PG158TB
L, S- BAND SPDT SWITCH
DESCRIPTION
The
µ
PG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5
GHz, having the low insertion loss. It housed in an original 6-pin super minimold package that is smaller than usual
6-pin minimold easy to install and contributes to miniaturizing the system.
FEATURES
• Low Insertion Loss: L
INS
= 0.3 dB TYP. @V
CONT
= +3.0 V/0 V, f = 1 GHz
L
INS
= 0.4 dB TYP. @V
CONT
= +3.0 V/0 V, f = 2 GHz
L
INS
= 0.5 dB TYP. @V
CONT
= +3.0 V/0 V, f = 2.5 GHz
• High isolation: ISL = 27 dB TYP. @V
CONT
= +3.0 V/0 V, f = 0.5 to 2 GHz
• Small 6-pin super minimold package (Size: 2.0
×
1.25
×
0.9 mm)
APPLICATIONS
• L, S-band digital cellular or cordless telephone
• PCS, WLAN, WLL and Bluetooth applications
ORDERING INFORMATION
Part Number
Marking
G1M
Package
6-pin super minimold
Supplying Form
Embossed tape 8 mm wide.
Pin 1, 2, 3 face to tape perforation side.
Qty 3 kp/reel.
µ
PG158TB-E3
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order:
µ
PG158TB)
Caution The IC must be handled with care to prevent static discharge because its circuit is composed of
GaAs MES FET.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14267EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1999
µ
PG158TB
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Control Voltage 1, 2
Input Power
Total Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
CONT1, 2
P
in
P
tot
T
A
T
stg
Ratings
−6.0
to +6.0
+28
0.15
−45
to +85
−45
to +150
Note
Unit
V
dBm
W
°C
°C
Note
Condition 2.5
≤
| V
CONT1
−
V
CONT2
|
≤
6.0 V
Remarks 1.
2.
Mounted on a 50
×
50
×
1.6 mm double copper clad epoxy glass PWB, T
A
= +85
°C
Operation in excess of any one of these parameters may result in permanent damage.
PIN CONNECTIONS
Pin No.
1
2
3
Connection
OUT1
GND
OUT2
Pin No.
4
5
6
Connection
V
CONT2
IN
V
CONT1
1
3
2
(Top View)
4
5
4
5
(Bottom View)
3
2
6
6
1
RECOMMENDED OPERATING CONDITIONS (T
A
= +25
°
C)
Parameter
Control Voltage (High)
Control Voltage (Low)
Symbol
V
CONT
V
CONT
MIN.
+2.5
−0.2
TYP.
+3.0
0
MAX.
+5.3
+0.2
Unit
V
V
2
Data Sheet P14267EJ2V0DS00
µ
PG158TB
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, T
A
= +25
°C,
V
CONT1
= 3 V, V
CONT2
= 0 V or V
CONT1
= 0 V, V
CONT2
= 3 V, Off chip DC
blocking capacitors value; 51 pF)
Parameter
Insertion Loss
Symbol
L
INS
Test Conditions
f = 0.5 to 1.0 GHz
f = 2.0 GHz
f = 2.5 GHz
Isolation
ISL
f = 0.5 to 2.0 GHz
f = 2.5 GHz
Input Return Loss
Output Return Loss
Input Power at 0.1 dB
Note2
Compression Point
Input Power at 1 dB
Note2
Compression Point
Switching Speed
Control Current
RL
in
RL
out
P
in(0.1 dB)
f = 0.5 to 2.0 GHz
f = 0.5 to 2.0 GHz
f = 1.0 GHz, V
CONT
= 3 V/0 V
MIN.
−
−
−
22
−
13
13
−
TYP.
0.3
0.4
0.5
Note1
MAX.
0.55
0.65
−
−
−
−
−
−
−
Unit
dB
27
23
Note1
dB
19
19
23.0
dB
dB
dBm
P
in(1 dB)
f = 1.0 GHz, V
CONT
= 3 V/0 V
22.0
−
26.5
dBm
t
sw
I
CONT
V
CONT
= 3 V/0 V
50
0.5
200
10
ns
−
µ
A
Notes 1.
Characteristic for reference at 2.0 to 2.5 GHz
2.
P
in(0.1 dB)
or P
in(1 dB)
is measured the input power level when the insertion loss increases more 0.1 dB or
1 dB than that of linear range. All other characteristics are measured in linear range.
Cautions 1.
When the
µ
PG158TB is used it is necessary to use DC blocking capacitors for No. 1 (OUT1),
No.3 (OUT2) and No.5 (IN).
The value of DC blocking capacitors should be chosen to
accommodate the frequency of operation, band width, switching speed and the condition
with actual board of your system.
The range of recommended DC blocking capacitor value is less than 100 pF.
2.
The distance between IC’s GND pin and ground pattern of substrate should be as shorter as
possible to avoid parasitic parameters.
Data Sheet P14267EJ2V0DS00
3
µ
PG158TB
TYPICAL CHARACTERISTICS
TEST CONDITIONS: V
CONT
= 3 V/0 V, P
in
= 0 dBm, T
A
= +25
°C
OUT1
IN
OUT2
50
Ω
IN-OUT1
CH1 S
11
INPUT RETURN LOSS vs. FREQUENCY
10 dB/ REF 0 dB
1: –23.433 dB
1 GHz
2: –30.102 dB
1.5 GHz
3: –25.504 dB
2 GHz
4: –16.018 dB
2.5 GHz
CH1 S
21
IN-OUT1
log MAG
ISOLATION vs. FREQUENCY
10 dB/ REF 0 dB
1: –28.047 dB
1 GHz
2: –28.565 dB
1.5 GHz
3: –25.835 dB
2 GHz
4: –22.507 dB
2.5 GHz
log MAG
Input Return Loss RL
in
(dB)
MARKER 1
1 GHz
MARKER 1
1 GHz
Isolation ISL (dB)
0
–10
–20
–30
–40
2
1
3
4
0
–10
–20
–30
2
–40
1
4
3
START 0.300 000 000 GHz
STOP 3.300 000 000 GHz
START 0.300 000 000 GHz
STOP 3.300 000 000 GHz
Frequency f (GHz)
Frequency f (GHz)
IN-OUT1
CH1 S
21
log MAG
INSERTION LOSS vs. FREQUENCY
1 dB/ REF 0 dB
1: –0.574 dB
1 GHz
2: –0.662 dB
1.5 GHz
3: –0.795 dB
2 GHz
4: –1.111 dB
2.5 GHz
1
2
3
IN-OUT1
CH1 S
22
OUTPUT RETURN LOSS vs. FREQUENCY
10 dB/ REF 0 dB
1: –22.502 dB
1 GHz
2: –28.139 dB
1.5 GHz
3: –25.867 dB
2 GHz
4: –15.601 dB
2.5 GHz
log MAG
0
–1
–2
–3
–4
Output Return Loss RL
out
(dB)
MARKER 1
1 GHz
Insertion Loss L
INS
(dB)
MARKER 1
1 GHz
0
–10
–20
–30
2
–40
1
4
3
4
START 0.300 000 000 GHz
STOP 3.300 000 000 GHz
START 0.300 000 000 GHz
STOP 3.300 000 000 GHz
Frequency f (GHz)
Frequency f (GHz)
Caution This data is including loss of the test fixture.
4
Data Sheet P14267EJ2V0DS00
µ
PG158TB
TEST CIRCUIT
T
A
= +25
°C,
V
CONT1
= +3 V, V
CONT2
= 0 V or V
CONT1
= 0 V, V
CONT2
= +3 V, f = 2 GHz
Off chip DC blocking capacitors value: C0 = 51 pF, C1 = 1000 pF (Bypass), Using NEC standard evaluation board
OUT1
OUT2
C0
C0
1
2
3
6
C1
5
4
C1
C0
V
CONT1
IN
V
CONT2
EVALUATION BOARD
OUT1
OUT2
V
CONT1
IN
V
CONT2
Data Sheet P14267EJ2V0DS00
5
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