RB520CS30L
D8
82
100 mA low V
F
MEGA Schottky barrier rectifier
Rev. 1 — 10 March 2011
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small
Surface-Mounted Device (SMD) plastic package.
SO
1.2 Features and benefits
Average forward current: I
F(AV)
≤
100 mA
Reverse voltage: V
R
≤
30 V
Low forward voltage: V
F
≤
450 mV
Low reverse current: I
R
≤
0.5
μA
AEC-Q101 qualified
Leadless ultra small SMD plastic package
1.3 Applications
Low current rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1.
Symbol
I
F(AV)
Quick reference data
Parameter
average forward current
Conditions
square wave;
δ
= 0.5; f = 20 kHz
T
amb
≤
135
°C
T
sp
≤
145
°C
I
R
V
R
V
F
[1]
[2]
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
0.14
-
330
100
100
0.5
30
450
mA
mA
μA
V
mV
reverse current
reverse voltage
forward voltage
V
R
= 10 V
I
F
= 10 mA
[2]
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm
2
.
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
NXP Semiconductors
RB520CS30L
100 mA low V
F
MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
sym001
1
2
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
RB520CS30L
-
Description
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.5 mm
Version
SOD882
Type number
4. Marking
Table 4.
Marking codes
Marking code
AP
Type number
RB520CS30L
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F(AV)
Parameter
reverse voltage
average forward current
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
135
°C
T
sp
≤
145
°C
I
FSM
P
tot
non-repetitive peak forward half sine wave;
current
t
p
≤
8.3 ms
total power dissipation
T
amb
≤
25
°C
[2]
[1]
Conditions
Min
-
Max
30
Unit
V
-
-
-
-
-
-
100
100
3
315
565
865
mA
mA
A
mW
mW
mW
[4][3]
[4][1]
[4][5]
RB520CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 10 March 2011
2 of 14
NXP Semiconductors
RB520CS30L
100 mA low V
F
MEGA Schottky barrier rectifier
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−65
−65
Max
150
+150
+150
Unit
°C
°C
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
T
j
= 25
°C
prior to surge.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1][2]
[3]
[4]
[5]
Min
-
-
-
-
Typ
-
-
-
-
Max
395
220
145
70
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
[6]
thermal resistance from
junction to solder point
[6]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
RB520CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 10 March 2011
3 of 14
NXP Semiconductors
RB520CS30L
100 mA low V
F
MEGA Schottky barrier rectifier
10
3
duty cycle =
Z
th(j-a)
(K/W)
10
2
1
0.5
0.25
0.1
0.05
10
0.02
0
0.01
0.33
0.2
0.75
006aac533
1
10
–5
10
–4
10
–3
10
–2
10
–1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 1.
10
3
Z
th(j-a)
(K/W)
10
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac534
duty cycle =
1
0.5
0.33
0.25
0.1
0.2
0.05
0.75
10
0
0.02
0.01
1
10
–5
10
–4
10
–3
10
–2
10
–1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
RB520CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 10 March 2011
4 of 14
NXP Semiconductors
RB520CS30L
100 mA low V
F
MEGA Schottky barrier rectifier
10
3
Z
th(j-a)
(K/W)
duty cycle =
10
2
1
0.5
0.25
0.1
10
0
0.02
0.01
0.75
0.33
0.2
0.05
006aac535
1
10
–5
10
–4
10
–3
10
–2
10
–1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
R
C
d
[1]
Conditions
[1]
Min
-
-
-
-
-
-
Typ
210
270
330
450
0.14
10
Max
-
-
450
-
0.5
-
Unit
mV
mV
mV
mV
μA
pF
reverse current
diode capacitance
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
V
R
= 10 V
V
R
= 1 V; f = 1 MHz
RB520CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 10 March 2011
5 of 14
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
