MGA-31189
0.25W High Gain Driver Amplifier
50 – 2000 MHz
Data Sheet
Description
Avago Technologies MGA-31189 is a 0.25W high gain
with good gain flatness Driver Amplifier MMIC, housed
in a standard SOT-89 plastic package. The device features
high linearity performance, excellent input and output
return loss, and low noise figure. The device can be easily
matched to obtain optimum power and linearity.
MGA-31189 is externally tunable to operate within 50MHz
to 2GHz frequency range applications. With high IP3, low
noise figure and wideband operation, the MGA-31189 can
be utilized as a driver amplifier in the transmit chain and
as a second stage LNA in the receive chain.
This device uses Avago Technologies proprietary 0.25um
GaAs Enhancement mode PHEMT process.
Features
•
ROHS compliant
•
Halogen free
•
Very high linearity at low DC bias power
[1]
•
High Gain
•
Good gain flatness
•
Low noise figure
•
Excellent uniformity in product specification
•
SOT-89 standard package
Specifications
At 0.9GHz, Vdd = 5V, Idd = 111mA (typ) @ 25°C
•
OIP3 = 42dBm
•
Noise Figure = 2.0dB
•
Gain = 21dB; Gain Flatness (+/-50MHz) = 0.1dB
•
P1dB = 24 dBm
•
IRL = 15.6dB, ORL = 12.8dB
Note:
1. The MGA-31189 has a superior LFOM of 14.5dB. Linearity Figure of
Merit (LFOM) is essentially OIP3 divided by DC bias power.
Pin connections and Package Marking
11X
#1
#2
RFin
GND
Top View
#3
RFout
#3
#2
RFout
GND
#1
RFin
Bottom View
Vdd
C
C
Notes:
Top View : Package marking provides orientation and identification
“11” = Device Code
“X” = Date Code character identifies month of manufacturing
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 100 V
ESD Human Body Model = 400 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
RFin
L
RFout
C
C
Figure 1. Simplified Schematic diagram
MGA-31189 Absolute Maximum Rating
[1]
T
A
=25°C
Symbol
I
d,max
V
d,max
P
d
P
in,max
T
j,max
T
stg
Thermal Resistance
Absolute Maximum
150
5.5
825
25
150
-65 to 150
Parameter
Drain Current
Device Voltage
Power Dissipation
[2]
CW RF Input Power
Junction Temperature
Storage Temperature
Units
mA
V
mW
dBm
°C
°C
Thermal Resistance
[3]
(V
d
= 5.0V, T
c
= 85°C)
θ
jc
= 54.5°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Board temperature (T
c
) is 25°C, for T
c
> 105°C
derate the device power at 18.3mW/°C rise
in board temperature adjacent to package
bottom.
3. Thermal resistance measured using Infrared
measurement technique.
MGA-31189 Electrical Specifications
[1]
T
A
= 25°C, V
d
= 5V, unless noted
Symbol
I
ds
NF
Parameter and Test Condition
Quiescent current
Noise Figure
Frequency
N/A
0.45GHz
0.9GHz
1.5GHz
0.45GHz
0.9GHz
1.5GHz
0.45GHz
0.9GHz
1.5GHz
0.45GHz
0.9GHz
1.5GHz
0.45GHz
0.9GHz
1.5GHz
0.45GHz
0.9GHz
1.5GHz
0.45GHz
0.9GHz
1.5GHz
0.45GHz
0.9GHz
1.5GHz
Units
mA
dB
Min.
93
–
Typ.
111
2.7
2.0
1.8
21
21
20
41.5
42
41.3
23.7
24
24.4
42.7
42.5
44.3
22.9
15.6
15.9
10
12.8
16
27.9
27.6
27.5
Max.
128
2.6
Gain
Gain
dB
19
23
OIP3
[2]
Output Third Order Intercept Point
dBm
39.2
–
P1dB
Output Power at 1dB Gain Compression
dBm
22.3
–
PAE
Power Added Efficiency at P1dB
%
–
–
IRL
Input Return Loss
dB
–
–
ORL
Output Return Loss
dB
–
–
ISOL
Isolation
dB
–
–
Notes:
1. Typical performance obtained from a test circuit described in Figure 34.
2. OIP3 test condition: F1 - F2 = 10MHz, with input power of -12dBm per tone measured at worst case side band.
2
MGA-31189 Consistency Distribution Chart
(1, 2)
100
110
120
130
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
Figure 2. Idd @ 900MHz, Vdd = 5V, LSL=93mA, Nominal=111mA, USL=128mA
Figure 3. NF @ 900MHz, Vdd = 5V, Nominal=2dB, USL=2.6dB
18
19
20
21
22
23
24
25
39
40
41
42
43
44
45
Figure 4. Gain @ 900MHz, Vdd = 5V, LSL=19dB, Nominal=21dB, USL=23dB
Figure 5. OIP3 @ 900MHz, Vdd = 5V, LSL=39.2dBm, Nominal=42dBm
Notes:
1. Data sample size is 3500 samples taken from 4 different wafers and
2 different lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
2. Measurements are made on production test board which represents
a trade-off between optimal Gain, NF, OIP3 and OP1dB. Circuit losses
have been de-embedded from actual measurements.
22
23
24
25
26
Figure 6. P1dB @ 900MHz, Vdd = 5V, LSL=22.3dBm, Nominal=24dBm
3
MGA-31189 Application Circuit Data for 450MHz
T
A
= 25°C, V
d
= 5.0V, I
d
= 111mA
52
50
48
OIP3 (dBm)
46
44
42
40
38
36
150
250
350
450
550
Frequency (MHz)
650
750
85°C
25°C
-40°C
P1dB (dBm)
25.0
24.5
24.0
23.5
23.0
22.5
22.0
21.5
21.0
150
250
350
450
550
Frequency (MHz)
650
85°C
25°C
-40°C
750
Figure 7. OIP3 vs Frequency and Temperature
Figure 8. P1dB vs Frequency and Temperature
22
20
18
Gain (dB)
16
14
12
10
150
250
350
450
550
Frequency (MHz)
650
85°C
25°C
-40°C
750
IRL (dB)
0
-5
-10
-15
-20
-25
-30
-35
150
250
350
450
550
Frequency (MHz)
650
85°C
25°C
-40°C
750
Figure 9. Gain vs Frequency and Temperature
Figure 10. IRL vs Frequency and Temperature
0
-5
-10
ORL (dB)
-15
-20
-25
-30
150
250
350
450
550
Frequency (MHz)
650
750
85°C
25°C
-40°C
Isolation (dB)
-26
-28
-30
-32
-34
-36
-38
150
250
350
450
550
Frequency (MHz)
650
85°C
25°C
-40°C
750
Figure 11. ORL vs Frequency and Temperature
Figure 12. Isolation vs Frequency and Temperature
4
MGA-31189 Application Circuit Data for 450MHz
(continue)
10
9
8
7
NF (dB)
6
5
4
3
2
1
150
250
350
450
550
Frequency (MHz)
650
750
85°C
25°C
-40°C
OIP3 (dBm)
46
44
42
40
38
36
34
32
30
28
26
85°C
25°C
-40°C
0.0
2.0
4.0
6.0
8.0 10.0 12.0 14.0 16.0 18.0 20.0
Pout (dBm)
Figure 13. Noise Figure vs Frequency and Temperature
Figure 14. OIP3 vs Output Power and Temperature at 450MHz
140
120
100
Idd (mA)
80
60
40
20
0
85°C
25°C
-40°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Vdd (V)
Figure 15. Current vs Voltage and Temperature
5
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