a. Pulse width limited by maximum junction temperature.
b. Not required by military spec.
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJC
T
J
, T
stg
LIMIT
60
± 20
0.99
0.62
3
6.25
0.725
170
20
- 55 to 150
W
°C/W
°C
A
UNIT
V
S11-1542-Rev. D, 01-Aug-11
1
Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com
Vishay Siliconix
LIMITS
SPECIFICATIONS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
V
DS
V
GS(th)
V
DS
= 0 V, I
D
= 10 μA
V
DS
= V
GS
, I
D
= 1 mA
T
C
= - 55 °C
T
C
= 125 °C
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
b
Forward
Transconductance
b
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
C
iss
C
oss
C
rss
C
ds
t
ON
t
OFF
V
DD
= 25 V, R
L
= 23
I
D
1 A, V
GEN
= 10 V, R
g
= 25
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 10 V
V
DS
= 0 V
T
C
= 125 °C
V
DS
= 48 V
T
C
= 125 °C
V
DS
= 10 V
I
D
= 0.3 A
I
D
= 1 A
T
C
= 125 °C
60
0.8
-
0.3
-
-
-
-
-
-
-
-
170
0.7
-
-
-
-
-
-
75
1.7
-
-
-
-
-
-
2
2
1.3
2.4
350
0.8
35
25
7
30
8
8.5
-
2
2.5
-
± 100
± 500
1
100
-
5
3
5.6
-
1.6
50
40
10
-
10
10
pF
mS
V
nA
μA
A
V
SYMBOL
TEST CONDITIONS
MIN.
TYP.
a
MAX.
UNIT
V
DS
= 7.5 V, I
D
= 0.525 A
I
S
= 0.99 A, V
GS
= 0 V
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-Source Capacitance
Switching
c
Turn-On Time
Turn-Off Time
ns
Notes
a. FOR DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW
300 μs duty cycle
2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-1542-Rev. D, 01-Aug-11
2
Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.0
V
GS
= 10 V
1.6
I
D
- Drain Current (A)
8V
7V
6V
1.2
5V
0.8
4V
0.4
3V
0
0
1
2
3
4
2V
5
0
0
0.4
0.8
1.2
1.6
2.0
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (mA)
80
2.6 V
60
100
V
GS
= 10 V
2.8 V
Vishay Siliconix
40
2.4 V
20
2.2 V
2.0 V
1.8 V
V
DS
- Drain-to-Source Voltage (V)
Ohmic Region Characteristics
1.0
T
J
= - 55 °C
0.8
I
D
- Drain Current (A)
V
DS
= 15 V
125 °C
0.6
25 °C
2.4
R
DS(on)
- On-Resistance (Ω)
2.8
Output Characteristics for Low Gate Drive
0.5 A
2.0
1.6
1.2
0.8
0.4
1.0 A
0.4
I
D
= 0.1 A
0.2
0
0
2
4
6
8
10
0
0
4
8
12
16
20
V
GS
- Gate-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
Transfer Characteristics
2.5
R
DS(on)
- Drain-Source On-Resistance (Normalized)
2.25
On-Resistance vs. Gate-to-Source Voltage
R
DS(on)
- Drain-Source On-Resistance (Ω)
V
GS
= 10 V
2.00
I
D
= 1.0 A
1.75
0.2 A
1.50
1.25
1.00
0.75
0.50
- 50
- 10
30
70
110
150
T
J
- Junction Temperature (°C)
2.0
1.5
V
GS
= 10 V
1.0
0.5
0
0
0.4
0.8
1.2
1.6
2.0
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Normalized On-Resistance vs. Junction Temperature
S11-1542-Rev. D, 01-Aug-11
3
Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?70223.
S11-1542-Rev. D, 01-Aug-11
4
Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-205AD (TO-39 TALL LID)
CD
INCHES
Dim
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
r
TL
TW
m
Min
0.305
0.240
0.335
0.016
0.500
0.016
—
0.250
0.100
—
—
0.029
0.028
MILLIMETERS
Min
7.75
6.10
8.51
5.08 TP
0.41
12.70
0.41
—
6.35
2.54
—
—
0.74
0.71
45_ TP
0.53
19.05
0.48
1.27
—
—
1.27
0.25
1.14
0.86
Max
0.335
0.260
0.370
0.021
0.750
0.019
0.050
—
—
0.050
0.010
0.045
0.034
Max
8.51
6.60
9.40
Notes
Q
P
CH
0.200 TP
6
7, 8
7, 8
7, 8
7, 8
7, 8
5
4
9
3
2
6
L1
LU
L2
LL
Seating
Plane
45_ TP
Dimensions (see notes 1, 2, 9, 11, 12)
ECN: S-40373—Rev. C, 15-Mar-04
DWG: 5511
LD
NOTES:
1. Dimensions are in inches. Metric equivalents are given for general
information only.
2.
3.
∝
1
2
4.
5.
C
L
TW
r
TL
LC
6.
Beyond radius (r) maximum, TW shall be held for a minimum length of 0.011
(0.028 mm).
Dimension TL measured from maximum HD.
Outline in this zone is not controlled.
Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This
zone is controlled for automatic handling.
Leads at guage plane 0.054+0.001,
−0.000
(1.37+0.03,
−0.00
mm) below
seating plane shall be within 0.007 (0.18 mm) radius of true position (TP) at
maximum material condition (MMC) relative to tab at MMC.
LU applies between L1 and L2, LD applies between L2 and L maximum.
Diameter is uncontrolled in L1 and beyond LL minimum.
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