RB520S30
200 mA low V
F
MEGA Schottky barrier rectifier
Rev. 01 — 6 October 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small
and flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
Average forward current: I
F(AV)
≤
0.2 A
Reverse voltage: V
R
≤
30 V
Low reverse current: I
R
≤
1
µA
AEC-Q101 qualified
Ultra small and flat lead SMD plastic package
1.3 Applications
I
I
I
I
I
Low current rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1.
Quick reference data
T
j
= 25
°
C unless otherwise specified.
Symbol
I
F(AV)
Parameter
average forward current
Conditions
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
105
°C
T
sp
≤
135
°C
I
R
V
R
V
F
[1]
[2]
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
520
0.2
0.2
1
30
600
A
A
µA
V
mV
reverse current
reverse voltage
forward voltage
V
R
= 10 V
I
F
= 0.2 A
[2]
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, mounting pad for
cathode 1 cm
2
.
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
NXP Semiconductors
RB520S30
200 mA low V
F
MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
sym001
1
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
RB520S30
SC-79
Description
plastic surface-mounted package; 2 leads
Version
SOD523
Type number
4. Marking
Table 4.
RB520S30
Marking codes
Marking code
ZA
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F(AV)
Parameter
reverse voltage
average forward current
Conditions
T
j
= 25
°C
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
105
°C
T
sp
≤
135
°C
I
FSM
non-repetitive peak
forward current
total power dissipation
t
p
= 8.3 ms
half sine wave;
JEDEC method
T
amb
≤
25
°C
[2]
[1]
Min
-
Max
30
Unit
V
-
-
-
0.2
0.2
1
A
A
A
P
tot
[3][4]
[3][1]
[3][5]
-
-
-
275
420
500
mW
mW
mW
RB520S30_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2009
2 of 12
NXP Semiconductors
RB520S30
200 mA low V
F
MEGA Schottky barrier rectifier
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−55
−65
Max
150
+150
+150
Unit
°C
°C
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
T
j
= 25
°C
prior to surge.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1][2]
[3]
[4]
[5]
Min
-
-
-
-
Typ
-
-
-
-
Max
455
300
250
90
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
[6]
thermal resistance from
junction to solder point
[6]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
RB520S30_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2009
3 of 12
NXP Semiconductors
RB520S30
200 mA low V
F
MEGA Schottky barrier rectifier
10
3
duty cycle =
Z
th(j-a)
(K/W)
10
2
1
0.75
0.5
0.33
0.25
0.1
0.05
10
0.02
0.01
0.2
006aab700
0
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 1.
10
3
Z
th(j-a)
(K/W)
10
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab701
duty cycle =
1
0.75
0.5
0.25
0.1
0.05
0.33
0.2
10
0.02
0.01
0
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
RB520S30_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2009
4 of 12
NXP Semiconductors
RB520S30
200 mA low V
F
MEGA Schottky barrier rectifier
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 200 mA
I
R
C
d
[1]
Conditions
[1]
Min
-
-
-
-
-
-
-
Typ
190
250
320
440
520
-
-
Max
220
290
360
500
600
1
20
Unit
mV
mV
mV
mV
mV
µA
pF
reverse current
diode capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
V
R
= 10 V
f = 1 MHz; V
R
= 1 V
1
I
F
(A)
10
−1
(1)
(2)
006aab702
10
−3
I
R
(A)
10
−4
10
−5
006aab703
(1)
(2)
10
−2
(3)
(4)
(5)
10
−6
10
−7
(3)
(4)
10
−3
10
−8
10
−4
0.0
10
−9
0.2
0.4
0.6
V
F
(V)
0.8
0
10
20
V
R
(V)
30
(1) T
j
= 150
°C
(2) T
j
= 125
°C
(3) T
j
= 85
°C
(4) T
j
= 25
°C
(5) T
j
=
−40 °C
(1) T
j
= 125
°C
(2) T
j
= 85
°C
(3) T
j
= 25
°C
(4) T
j
=
−40 °C
Fig 3.
Forward current as a function of forward
voltage; typical values
Fig 4.
Reverse current as a function of reverse
voltage; typical values
RB520S30_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2009
5 of 12
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