CBT16292
12-bit 1-of-2 multiplexer/demultiplexer
Rev. 02 — 18 April 2008
Product data sheet
1. General description
The CBT16292 is a 12-bit 1-of-2 high-speed TTL-compatible multiplexer/demultiplexer.
The low ON resistance of the switch allows connections to be made with minimal
propagation delay.
When the select input (S) is LOW, port nA is connected to port nB1 and port nB2 is
connected to GND via an internal pull-down resistor (500
Ω).
When select input (S) is
HIGH, port nA is connected to port nB2 and nB1 is connected to GND via an internal
pull-down resistor (500
Ω).
The CBT16292 is characterized for operation from –40
°C
to +85
°C.
2. Features
6
Ω
switch connection between two ports
TTL compatible input levels
Break-before-make feature
Internal 500
Ω
pull-down resistors to ground
ESD protection:
N
HBM JESD22-A114E Class 2 exceeds 2000 V
N
MM JESD22-A115-A exceeds 200 V
N
CDM JESD22-C101C exceeds 1000 V
I
Latch-up performance exceeds 500 mA per JESD 78
I
I
I
I
I
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
CBT16292DGG
−40 °C
to 85
°C
TSSOP56
Description
plastic thin shrink small outline package; 56 leads;
body width 6.1 mm
Version
SOT364-1
Type number
NXP Semiconductors
CBT16292
12-bit 1-of-2 multiplexer/demultiplexer
4. Functional diagram
2
1A
1B1
1B2
2B1
2B2
3B1
3B2
4B1
4B2
5B1
5B2
6B1
6B2
7B1
7B2
8B1
8B2
9B1
9B2
10B1
10B2
11B1
11B2
12B1
12B2
54
53
52
51
50
48
47
46
45
44
43
42
41
40
39
37
36
35
34
33
32
31
30
29
S
1
001aah984
500
Ω
500
Ω
4
2A
6
3A
1A
2
500
Ω
54
1B1
9
4A
11
5A
13
6A
53
1B2
15
7A
18
8A
21
9A
12A
27
30
12B1
23
10A
500
Ω
25
11A
29
27
1
12A
S
12B2
001aah983
Fig 1.
Logic symbol
Fig 2.
Logic diagram
CBT16292_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 18 April 2008
2 of 11
NXP Semiconductors
CBT16292
12-bit 1-of-2 multiplexer/demultiplexer
5. Pinning information
5.1 Pinning
S
1A
n.c.
2A
n.c.
3A
n.c.
GND
4A
1
2
3
4
5
6
7
8
9
56 n.c.
55 n.c.
54 1B1
53 1B2
52 2B1
51 2B2
50 3B1
49 GND
48 3B2
47 4B1
46 4B2
45 5B1
44 5B2
43 6B1
42 6B2
41 7B1
40 7B2
39 8B1
38 GND
37 8B2
36 9B1
35 9B2
34 10B1
33 10B2
32 11B1
31 11B2
30 12B1
29 12B2
001aah985
n.c. 10
5A 11
n.c. 12
6A 13
n.c. 14
7A 15
n.c. 16
V
CC
17
8A 18
GND 19
n.c. 20
9A 21
n.c. 22
10A 23
n.c. 24
11A 25
n.c. 26
12A 27
n.c. 28
CBT16292
Fig 3.
Pin configuration SOT364-1 (TSSOP56)
5.2 Pin description
Table 2.
Symbol
S
nA
n.c.
GND
V
CC
nB1
nB2
Pin description
Pin
1
2, 4, 6, 9, 11, 13, 15, 18, 21, 23, 25, 27
3, 5, 7, 10, 12, 14, 16, 20, 22, 24, 26, 28, 55, 56
8, 19, 38, 49
17
54, 52, 50, 47, 45, 43, 41, 39, 36, 34, 32, 30
53, 51, 48, 46, 44, 42, 40, 37, 35, 33, 31, 29
Description
select input
common input or output (1A to 12A)
not connected
ground (0 V)
supply voltage
independent input or output (1B1 to 12B1)
independent input or output (1B2 to 12B2)
CBT16292_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 18 April 2008
3 of 11
NXP Semiconductors
CBT16292
12-bit 1-of-2 multiplexer/demultiplexer
6. Functional description
Table 3.
S input
L
H
Function selection
[1]
Channel on
nA to nB1 or nB1 to nA
(nB2 connected to GND via internal resistor (500
Ω)
nA to nB2 or nB2 to nA
(nB1 connected to GND via internal resistor (500
Ω)
H = HIGH voltage level; L = LOW voltage level.
[1]
7. Limiting values
Table 4.
Limiting values
[1][2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
V
I
I
IK
I
SW
T
stg
P
tot
[1]
Parameter
supply voltage
input voltage
input clamping current
switch current
storage temperature
total power dissipation
Conditions
[3]
Min
−0.5
−0.5
−50
−128
−65
[4]
Max
+7.0
+7.0
-
+128
+150
600
Unit
V
V
mA
mA
°C
mW
V
I
< 0 V
continuous current through channel
T
amb
=
−40 °C
to +125
°C
-
Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed
150
°
C.
The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
P
tot
derates linearly with 8 mW/K above 55
°C.
[2]
[3]
[4]
8. Recommended operating conditions
Table 5.
Operating conditions
All unused control inputs of the device must be held at V
CC
or GND to ensure proper device operation.
Symbol
V
CC
V
IH
V
IL
T
amb
Parameter
supply voltage
HIGH-level input voltage
LOW-level input voltage
ambient temperature
operating in free-air
Conditions
Min
4.0
2.0
-
−40
Max
5.5
-
0.8
+85
Unit
V
V
V
°C
CBT16292_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 18 April 2008
4 of 11
NXP Semiconductors
CBT16292
12-bit 1-of-2 multiplexer/demultiplexer
9. Static characteristics
Table 6.
Static characteristics
T
amb
=
−
40
°
C to +85
°
C.
Symbol
V
IK
I
I
I
CC
∆I
CC
C
I
C
io(off)
R
ON
Parameter
input clamping voltage
input leakage current
supply current
additional supply current
input capacitance
off-state input/output capacitance
ON resistance
Conditions
V
CC
= 4.5 V; I
I
=
−18
mA
V
CC
= 5.5 V; V
I
= V
CC
or GND
V
CC
= 5.5 V; I
O
= 0 mA;
V
I
= V
CC
or GND
per input; V
CC
= 5.5 V; one input at
3.4 V, other inputs at V
CC
or GND
select input S; V
CC
= 5.0 V;
V
I
= 3 V or 0 V
V
O
= 3 V or 0 V; V
CC
= 0 V
V
CC
= 4.5 V
V
I
= 0 V; I
I
= 64 mA
V
I
= 0 V; I
I
= 30 mA
V
I
= 2.4 V; I
I
= 15 mA
[1]
[2]
[3]
All typical values are measured at T
amb
= 25
°C.
This is the increase in supply current for each input that is at the specified TTL voltage level rather than V
CC
or GND.
Measured by the voltage drop between the A and the B terminals at the indicated current through the switch. ON resistance is
determined by the lowest voltage of the two (A or B) terminals.
[3]
[2]
Min
-
-
-
-
-
-
-
-
-
Typ
[1]
-
-
-
-
4
6
8
8
13
Max
−1.2
±5
3
2.5
-
-
12.5
11
16
Unit
V
µA
µA
mA
pF
pF
Ω
Ω
Ω
10. Dynamic characteristics
Table 7.
Dynamic characteristics
T
amb
=
−
40
°
C to +85
°
C; V
CC
= 5.0 V
±
0.5 V; for test circuit see
Figure 6.
Symbol
t
pd
t
en
t
dis
t
b-m
[1]
[2]
Parameter
propagation delay
enable time
disable time
break-before-make time
Conditions
nA, nBn to nBn, nA; see
Figure 4
S to nA, nBn; see
Figure 5
S to nA, nBn; see
Figure 5
nA, nBn to nBn, nA
[1][2]
[2]
[2]
[3]
Min
-
1.5
2.2
0
Typ
-
-
-
-
Max
0.4
6.0
5.5
2.0
Unit
ns
ns
ns
ns
This parameter is warranted but not production tested. The propagation delay is based on the RC time constant of the typical
ON resistance of the switch and a load capacitance, when driven by an ideal voltage source (zero output impedance).
t
pd
is the same as t
PLH
and t
PHL
.
t
en
is the same as t
PZL
and t
PZH
.
t
dis
is the same as t
PLZ
and t
PHZ
.
Time interval between break and make measured at the same operating point (V
CC
and temperature).
[3]
CBT16292_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 18 April 2008
5 of 11
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