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BD950

产品描述Bipolar Transistors;PNP;-5A;-60V;TO-220
文件大小213KB,共2页
制造商Inchange Semiconductor
下载文档 详细参数 全文预览

BD950概述

Bipolar Transistors;PNP;-5A;-60V;TO-220

BD950规格参数

参数名称属性值
厂商名称Inchange Semiconductor
包装说明,
Reach Compliance Codeunknown

BD950文档预览

isc
Silicon PNP Power Transistor
BD950
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -60V(Min)
·DC
Current Gain-
: h
FE
= 40(Min)@ I
C
= -500mA
·Complement
to Type BD949
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-60
-60
-5
-5
-8
40
150
-65~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
3.12
70
UNIT
℃/W
℃/W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(
sat
)
V
BE(
on
)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
CONDITIONS
I
C
= -1mA ; I
B
= 0
I
C
= -1mA ; I
E
= 0
I
E
= -1mA ; I
C
= 0
I
C
= -2A; I
B
= -0.2A
I
C
= -2A; V
CE
= -4V
V
CB
= -60V; I
E
= 0
I
CBO
Collector Cutoff Current
V
CB
= -30V; I
E
= 0,T
J
=150℃
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
V
CE
= -30V; I
B
= 0
V
EB
= -5V; I
C
= 0
I
C
= -500mA ; V
CE
= -4V
I
C
= -2A ; V
CE
= -4V
I
C
= -500mA ; V
CE
= -4V
40
20
3
MIN
-60
-60
-5
TYP.
BD950
MAX
UNIT
V
V
V
-1.0
-1.4
-50
-1.0
-0.1
-0.2
V
V
μA
mA
mA
mA
MHz
NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc website
www.iscsemi.com
2
isc & iscsemi
is registered trademark
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