RHRD440, RHRD460, RHRD440S, RHRD460S
Data Sheet
January 2002
4A, 400V - 600V Hyperfast Diodes
The RHRD440, RHRD460, RHRD440S and RHRD460S are
hyperfast diodes with soft recovery characteristics
(t
rr
< 30ns). They have half the recovery time of ultrafast
diodes and are of silicon nitride passivated ion-implanted
epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits,
reducing power loss in the switching transistors.
Formerly developmental type TA49055.
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RHRD440
RHRD460
RHRD440S
RHRD460S
PACKAGE
TO-251
TO-251
TO-252
TO-252
BRAND
RHR440
RHR460
RHR440
RHR460
Packaging
JEDEC STYLE TO-251
ANODE
CATHODE
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in the tape and reel, i.e.,
RHRD460S9A.
Symbol
K
JEDEC STYLE TO-252
CATHODE
(FLANGE)
CATHODE
ANODE
A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RHRD440,
RHRD440S
RHRD460,
RHRD460S
600
600
600
4
8
40
50
10
-65 to 175
300
260
UNITS
V
V
V
A
A
A
W
mJ
o
C
o
C
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 157
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
Maximum Lead Temperature for Soldering
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
©2002 Fairchild Semiconductor Corporation
400
400
400
4
8
40
50
10
-65 to 175
300
260
RHRD440, RHRD460, RHRD440S, RHRD460S Rev. B
RHRD440, RHRD460, RHRD440S, RHRD460S
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
RHRD440, RHRD440S
SYMBOL
V
F
I
F
= 4A
I
F
= 4A, T
C
= 150
o
C
I
R
V
R
= 400V
V
R
= 600V
V
R
= 400V, T
C
= 150
o
C
V
R
= 600V, T
C
= 150
o
C
t
rr
I
F
= 1A, d
I
F
/dt = 200A/
µ
s
I
F
= 4A, d
I
F
/dt = 200A/
µ
s
t
a
t
b
Q
RR
C
J
R
θ
JC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
I
F
= 4A, d
I
F
/dt = 200A/
µ
s
I
F
= 4A, d
I
F
/dt = 200A/
µ
s
I
F
= 4A, d
I
F
/dt = 200A/
µ
s
V
R
= 10V, I
F
= 0A
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
16
7
45
15
-
MAX
2.1
1.7
100
-
500
-
30
35
-
-
-
-
3
RHRD460, RHRD460S
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
16
7
45
15
-
MAX
2.1
1.7
-
100
-
500
30
35
-
-
-
-
3
UNITS
V
V
µ
A
µ
A
µ
A
µ
A
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
20
500
I
R
, REVERSE CURRENT (µA)
100
175
o
C
I
F
, FORWARD CURRENT (A)
10
175
o
C
100
o
C
100
o
C
25
o
C
1
0.1
25
o
C
0.01
0.5
0
0.5
1
1.5
2
2.5
3
V
F
, FORWARD VOLTAGE (V)
0.001
0
100
200
300
400
500
600
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
RHRD440, RHRD460, RHRD440S, RHRD460S Rev. B
RHRD440, RHRD460, RHRD440S, RHRD460S
Typical Performance Curves
30
25
t, RECOVERY TIMES (ns)
20
15
10
tb
5
0
0.5
0
0.5
trr
t, RECOVERY TIMES (ns)
(Continued)
50
T
C
= 100
o
C, dI
F
/dt = 200A/µs
40
trr
30
T
C
= 25
o
C, dI
F
/dt = 200A/µs
ta
20
ta
tb
10
1
I
F
, FORWARD CURRENT (A)
4
1
I
F
, FORWARD CURRENT (A)
4
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
60
50
t, RECOVERY TIMES (ns)
40
30
T
C
= 175
o
C, dI
F
/dt = 200A/µs
trr
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
5
4
DC
3
SQ. WAVE
2
ta
20
10
0
0.5
tb
1
1
I
F
, FORWARD CURRENT (A)
4
0
145
150
155
160
165
170
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
50
C
J
, JUNCTION CAPACITANCE (pF)
40
30
20
10
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
RHRD440, RHRD460, RHRD440S, RHRD460S Rev. B
RHRD440, RHRD460, RHRD440S, RHRD460S
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 8. t
rr
TEST CIRCUIT
I
MAX
= 1A
L = 20mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RHRD440, RHRD460, RHRD440S, RHRD460S Rev. B
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E
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®
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effectiveness.
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Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Rev. H4
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