TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and small signal low power amplifiers.
This transistor has superior noise figure and
associated gain performance at UHF, VHF and micro-
wave frequencies.
Features
D
Low power applications
D
Very low noise figure
D
High transition frequency f
T
= 12 GHz
2
1
1
2
94 9279
13 579
94 9278
95 10831
3
4
4
3
TSDF1205 Marking: F05
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
TSDF1205R Marking: 05F
Plastic case (SOT 143R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
1
2
13 653
13 566
13 654
13 566
3
4
4
3
TSDF1205W Marking: WF0
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
TSDF1205RW Marking: W0F
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
9
4
2
12
40
150
–65 to +150
Unit
V
V
V
mA
mW
°
C
°
C
T
amb
≤
132
°
C
Document Number 85065
Rev. 5, 30-Jun-00
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thJA
Value
450
Unit
K/W
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
V
CE
= 12 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
I
C
= 5 mA, I
B
= 0.5 mA
V
CE
= 2 V, I
C
= 2 mA
Symbol Min Typ Max Unit
I
CES
100
m
A
I
CBO
100 nA
I
EBO
2
m
A
V
(BR)CEO
4
V
V
CEsat
0.1 0.5
V
h
FE
50 120 250
Electrical AC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Test Conditions
V
CE
= 2 V, I
C
= 5 mA, f = 1 GHz
V
CB
= 1 V, f = 1 MHz
V
CE
= 1 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 2 V, I
C
= 2 mA, Z
S
= Z
Sopt
,
Z
L
= 50
W
, f = 2 GHz
V
CE
= 2 V, I
C
= 2 mA,
f = 2 GHz (@F
opt
)
V
CE
= 2 V, I
C
= 5 mA, Z
S
= Z
Sopt
,
Z
L
= 50
W
f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA, Z
0
= 50
W
,
f = 2 GHz
Symbol
f
T
C
cb
C
ce
C
eb
F
G
pe
G
pe
S
21e
2
Min
Typ
12
0.2
0.35
0.15
1.3
13
11.5
12.5
Max
Unit
GHz
pF
pF
pF
dB
dB
dB
dB
Transducer gain
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Document Number 85065
Rev. 5, 30-Jun-00
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
C
cb
– Collector Base Capacitance ( pF )
100
P
tot
– Total Power Dissipation ( mW )
80
60
40
20
0
0
14284
0.5
f=1MHz
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
V
CB
– Collector Base Voltage ( V )
20
40
60
80
100 120 140 160
14286
T
amb
– Ambient Temperature (
°C
)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
16
f
T
– Transition Frequency ( GHz )
14
12
10
8
6
4
2
0
0
14285
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
3.0
f=1GHz
V
CE
=3V
F – Noise Figure ( dB )
2.5
2.0
1.5
1.0
0.5
0
2
4
6
8
10
12
14
14287
V
CE
=2V
f=2GHz
Z
S
=50
W
V
CE
=2V
0
1
2
3
4
5
6
I
C
– Collector Current ( mA )
I
C
– Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
Figure 4. Noise Figure vs. Collector Current
Document Number 85065
Rev. 5, 30-Jun-00
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Dimensions of TSDF1205 in mm
96 12240
Dimensions of TSDF1205R in mm
96 12239
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Document Number 85065
Rev. 5, 30-Jun-00
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Dimensions of TSDF1205W in mm
96 12237
Dimensions of TSDF1205RW in mm
96 12238
Document Number 85065
Rev. 5, 30-Jun-00
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5 (6)
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