PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 01 — 31 March 2006
Product data sheet
1. Product profile
1.1 General description
NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
Philips
PEMD30
PUMD30
SOT666
SOT363
JEITA
-
SC-88
PNP/PNP
complement
PEMB30
PUMB30
NPN/NPN
complement
PEMH30
PUMH30
Type number
1.2 Features
I
100 mA output current capability
I
Built-in bias resistors
I
Simplifies circuit design
I
Reduces component count
I
Reduces pick and place costs
1.3 Applications
I
Low current peripheral driver
I
Control of IC inputs
I
Cost-saving alternative for BC847BPN
and BC847BVN
I
Switching loads
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
Conditions
open base
Min
-
-
1.54
Typ
-
-
2.2
Max
50
100
2.86
Unit
V
mA
kΩ
Per transistor; for the PNP transistor with negative polarity
Philips Semiconductors
PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
TR1
Simplified outline
6
5
4
Symbol
6
5
4
R1
TR2
1
2
3
001aab555
R1
1
2
3
006aaa269
3. Ordering information
Table 4.
Ordering information
Package
Name
PEMD30
PUMD30
-
SC-88
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
Version
SOT666
SOT363
Type number
4. Marking
Table 5.
PEMD30
PUMD30
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
2U
*B3
Type number
PEMD30_PUMD30_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2006
2 of 11
Philips Semiconductors
PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current
peak collector current
total power dissipation
SOT363
SOT666
Per device
P
tot
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
[1]
[2]
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
[1][2]
Min
-
-
-
-
-
Max
50
50
5
100
100
Unit
V
V
V
mA
mA
Per transistor; for the PNP transistor with negative polarity
-
-
200
200
mW
mW
T
amb
≤
25
°C
[1]
[1][2]
-
-
−65
-
−65
300
300
+150
150
+150
mW
mW
°C
°C
°C
storage temperature
junction temperature
ambient temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
R
th(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
[1]
[2]
Conditions
in free air
[1]
[1][2]
Min
Typ
Max
Unit
Per transistor
-
-
-
-
625
625
K/W
K/W
in free air
[1]
[1][2]
-
-
-
-
416
416
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
PEMD30_PUMD30_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2006
3 of 11
Philips Semiconductors
PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
CEO
Parameter
collector-base cut-off
current
Conditions
V
CB
= 50 V; I
E
= 0 A
Min
-
-
-
-
30
-
1.54
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
-
-
-
-
2.5
3
pF
pF
Typ
-
-
-
-
-
-
2.2
Max
100
1
50
100
-
150
2.86
mV
kΩ
Unit
nA
µA
µA
nA
Per transistor; for the PNP transistor with negative polarity
collector-emitter cut-off V
CE
= 30 V; I
B
= 0 A
current
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
°C
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
collector capacitance
TR1 (NPN)
TR2 (PNP)
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 20 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
EBO
h
FE
V
CEsat
R1
C
c
PEMD30_PUMD30_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2006
4 of 11
Philips Semiconductors
PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
500
h
FE
(1)
006aaa696
1
006aaa697
400
V
CEsat
(V)
(2)
300
10
−1
200
(3)
(1)
(2)
(3)
100
0
10
−1
1
10
I
C
(mA)
10
2
10
−2
10
−1
1
10
I
C
(mA)
10
2
V
CE
= 5 V
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
I
C
/I
B
= 20
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
Fig 1. TR1 (NPN): DC current gain as a function of
collector current; typical values
500
h
FE
400
(1)
Fig 2. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
−1
006aaa692
006aaa691
V
CEsat
(V)
300
(2)
−10
−1
200
(3)
(1)
(2)
(3)
100
0
−10
−1
−1
−10
I
C
(mA)
−10
2
−10
−2
−10
−1
−1
−10
I
C
(mA)
−10
2
V
CE
=
−5
V
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
I
C
/I
B
= 20
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
Fig 3. TR2 (PNP): DC current gain as a function of
collector current; typical values
Fig 4. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
PEMD30_PUMD30_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2006
5 of 11
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