100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
100 mA, 50 V, NPN, 硅, 小信号晶体管, TO-236AB
| 参数名称 | 属性值 |
| Brand Name | NXP Semiconduc |
| 是否Rohs认证 | 符合 |
| 零件包装代码 | TO-236 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 |
| 针数 | 3 |
| 制造商包装代码 | SOT23 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 21.36 |
| 最大集电极电流 (IC) | 0.1 A |
| 基于收集器的最大容量 | 3.5 pF |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 100 |
| JEDEC-95代码 | TO-236AB |
| JESD-30 代码 | R-PDSO-G3 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | NPN |
| 功耗环境最大值 | 0.25 W |
| 最大功率耗散 (Abs) | 0.25 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Tin (Sn) |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 40 |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| VCEsat-Max | 0.3 V |
| Base Number Matches | 1 |
| PDTC123JT,215 | PDTC123JU,115 | PDTC123JM,315 | PDTC123JT,235 | |
|---|---|---|---|---|
| 描述 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| Brand Name | NXP Semiconduc | NXP Semiconduc | NXP Semiconductor | NXP Semiconduc |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 |
| 零件包装代码 | TO-236 | SC-70 | DFN | TO-236 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | 1.0 X 0.6 MM, 0.5 MM HEIGHT, ULTRA SMALL, PLASTIC, SMD, SC-101, 3 PIN | SMALL OUTLINE, R-PDSO-G3 |
| 针数 | 3 | 3 | 3 | 3 |
| 制造商包装代码 | SOT23 | SOT323 | SOT883 | SOT23 |
| Reach Compliance Code | compli | compli | compliant | compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 21.36 | BUILT-IN BIAS RESISTOR RATIO IS 21.37 | BUILT-IN BIAS RESISTOR RATIO IS 21.36 | BUILT-IN BIAS RESISTOR RATIO IS 21.36 |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 100 | 100 | 100 | 100 |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PBCC-N3 | R-PDSO-G3 |
| JESD-609代码 | e3 | e3 | e3 | e3 |
| 湿度敏感等级 | 1 | 1 | 1 | 1 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | CHIP CARRIER | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 | 260 | NOT SPECIFIED | 260 |
| 极性/信道类型 | NPN | NPN | NPN | NPN |
| 最大功率耗散 (Abs) | 0.25 W | 0.2 W | 0.25 W | 0.25 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子面层 | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) |
| 端子形式 | GULL WING | GULL WING | NO LEAD | GULL WING |
| 端子位置 | DUAL | DUAL | BOTTOM | DUAL |
| 处于峰值回流温度下的最长时间 | 40 | 40 | NOT SPECIFIED | 40 |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 |
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