100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
100 mA, 50 V, NPN, 硅, 小信号晶体管
| 参数名称 | 属性值 |
| Brand Name | NXP Semiconduc |
| 是否Rohs认证 | 符合 |
| 厂商名称 | NXP(恩智浦) |
| 零件包装代码 | DFN |
| 包装说明 | 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN |
| 针数 | 3 |
| 制造商包装代码 | SOT883 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 4.7 |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 100 |
| JESD-30 代码 | R-PBCC-N3 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 0.25 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Tin (Sn) |
| 端子形式 | NO LEAD |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| PDTC114YM,315 | PDTC114YE/DG,115 | PDTC114YE/DG/B3,11 | PDTC114YU,115 | PDTC114YT,215 | |
|---|---|---|---|---|---|
| 描述 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 |
| Reach Compliance Code | compli | unknow | compli | compli | compli |
| Brand Name | NXP Semiconduc | NXP Semiconduc | - | NXP Semiconduc | NXP Semiconduc |
| 厂商名称 | NXP(恩智浦) | - | - | NXP(恩智浦) | NXP(恩智浦) |
| 零件包装代码 | DFN | SC-75 | - | SC-70 | TO-236 |
| 包装说明 | 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN | - | - | PLASTIC, SC-70, 3 PIN | PLASTIC PACKAGE-3 |
| 针数 | 3 | 3 | - | 3 | 3 |
| 制造商包装代码 | SOT883 | SOT416 | - | SOT323 | SOT23 |
| ECCN代码 | EAR99 | - | - | EAR99 | EAR99 |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 4.7 | - | - | BUILT-IN BIAS RESISTOR RATIO IS 4.7 | BUILT-IN BIAS RESISTOR RATIO IS 4.7 |
| 最大集电极电流 (IC) | 0.1 A | - | - | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | - | - | 50 V | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | - | - | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 100 | - | - | 100 | 100 |
| JESD-30 代码 | R-PBCC-N3 | - | - | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609代码 | e3 | - | - | e3 | e3 |
| 湿度敏感等级 | 1 | - | - | 1 | 1 |
| 元件数量 | 1 | - | - | 1 | 1 |
| 端子数量 | 3 | - | - | 3 | 3 |
| 最高工作温度 | 150 °C | - | - | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | - | - | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | - | 260 | 260 |
| 极性/信道类型 | NPN | - | - | NPN | NPN |
| 最大功率耗散 (Abs) | 0.25 W | - | - | 0.2 W | 0.25 W |
| 认证状态 | Not Qualified | - | - | Not Qualified | Not Qualified |
| 表面贴装 | YES | - | - | YES | YES |
| 端子面层 | Tin (Sn) | - | - | Tin (Sn) | Tin (Sn) |
| 端子形式 | NO LEAD | - | - | GULL WING | GULL WING |
| 端子位置 | BOTTOM | - | - | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | - | 40 | 40 |
| 晶体管应用 | SWITCHING | - | - | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | - | - | SILICON | SILICON |
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