2SA1881-6,2SA1881-6 pdf中文资料,2SA1881-6引脚图,2SA1881-6电路-Datasheet-电子工程世界

2SA1881-6: 产品描述Small Signal Bipolar Transistor, 1A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN; 产品类别分立半导体晶体管; 文件大小95KB，共4页; 制造商SANYO; 官网地址http://www.semic.sanyo.co.jp/english/index-e.html

下载文档详细参数选型对比全文预览

2SA1881-6概述

Small Signal Bipolar Transistor, 1A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN

2SA1881-6规格参数

参数名称	属性值
是否Rohs认证	不符合
Objectid	1481158198
包装说明	SMALL OUTLINE, R-PDSO-G3
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
最大集电极电流 (IC)	1 A
集电极-发射极最大电压	15 V
配置	SINGLE
最小直流电流增益 (hFE)	200
JESD-30 代码	R-PDSO-G3
JESD-609代码	e0
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
最大功率耗散 (Abs)	0.25 W
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	GULL WING
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	300 MHz

2SA1881-6相似产品对比

	2SA1881-6	2SA1881-5	2SC4983-5	2SC4983-6	2SC4983-7	2SA1881-7
描述	Small Signal Bipolar Transistor, 1A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合
Objectid	1481158198	1481158192	1481158309	1481158315	1481158321	1481158204
包装说明	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
针数	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	1 A	1 A	1 A	1 A	1 A	1 A
集电极-发射极最大电压	15 V	15 V	15 V	15 V	15 V	15 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	200	135	135	200	300	300
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609代码	e0	e0	e0	e0	e0	e0
元件数量	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	NPN	NPN	NPN	PNP
最大功率耗散 (Abs)	0.25 W	0.25 W	0.25 W	0.25 W	0.25 W	0.25 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子面层	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	300 MHz	300 MHz	200 MHz	200 MHz	200 MHz	300 MHz

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