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RURP6120CC

产品描述RURP6120CC
产品类别分立半导体    二极管   
文件大小83KB,共5页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
下载文档 详细参数 全文预览

RURP6120CC概述

RURP6120CC

RURP6120CC规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Renesas(瑞萨电子)
Reach Compliance Codenot_compliant
ECCN代码EAR99
二极管类型RECTIFIER DIODE
最大正向电压 (VF)2.1 V
JESD-609代码e0
最高工作温度175 °C
最低工作温度-65 °C
最大重复峰值反向电压1200 V
最大反向电流100 µA
最大反向恢复时间0.09 µs
反向测试电压1200 V
表面贴装NO
端子面层Tin/Lead (Sn/Pb)

RURP6120CC文档预览

RURP6120CC
October 1995
6A, 1200V Ultrafast Dual Diode
Package
JEDEC TO-220AB
ANODE 2
CATHODE
ANODE 1
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <70ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . +175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
• Planar Construction
CATHODE
(FLANGE)
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Description
The RURP6120CC is an ultrafast dual diode with soft recov-
ery characteristics (t
RR
< 70ns). It has low forward voltage
drop and is silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored
charge and ultrafast soft recovery minimize ringing and elec-
trical noise in many power switching circuits reducing power
loss in the switching transistors.
PACKAGE AVAILABILITY
PART NUMBER
RURP6120CC
PACKAGE
TO-220AB
BRAND
RUR6120C
Symbol
d
A
1
A
2
NOTE: When ordering, use the entire part number.
Formerly developmental type TA49039.
Absolute Maximum Ratings
(per leg) T
C
= +25
o
C, Unless Otherwise Specified
RURP6120CC
UNITS
V
V
V
A
A
A
W
mj
o
C
Peak Repetitive Reverse Voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
T
C
= +140
o
C
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
Square Wave, 20kHz
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
Halfwave, 1 phase, 60Hz
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
1200
1200
1200
6
12
60
50
10
-65 to +175
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
File Number
4051
1
Specifications RURP6120CC
Electrical Characteristics
(per leg) T
C
= +25
o
C, Unless Otherwise Specified
RURP6120CC LIMITS
SYMBOL
V
F
TEST CONDITION
I
F
= 6A, T
C
= +25
o
C
I
F
= 6A, T
C
= +150
o
C
I
R
V
R
= 1200V, T
C
= +25
o
C
V
R
= 1200V, T
C
= +150
o
C
t
RR
I
F
= 1A, dI
F
/dt = 200A/µs
I
F
= 6A, dI
F
/dt = 200A/µs
t
A
t
B
Q
RR
C
J
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (See Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θJC
= Thermal resistance junction to case.
E
AVL
= Controlled Avalanche Energy (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
I
F
= 6A, dI
F
/dt = 200A/µs
I
F
= 6A, dI
F
/dt = 200A/µs
I
F
= 6A, dI
F
/dt = 200A/µs
V
R
= 10V, I
F
= 0A
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
45
30
400
22
-
MAX
2.1
1.9
100
500
70
90
-
-
-
-
3
UNITS
V
V
µA
µA
ns
ns
ns
ns
nC
pF
o
C/W
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
L
1
= SELF INDUCTANCE OF
R
4
+ L
LOOP
R
1
Q
1
+V
1
0
t
2
t
1
R
2
+V
3
Q
2
t
1
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
t
A(MIN)
R
4
10
L
LOOP
DUT
Q
4
0
0.25 I
RM
I
RM
C1
R
4
-V
4
V
RM
V
R
I
F
dI
F
dt
t
A
t
RR
t
B
t
3
0
-V
2
R
3
Q
3
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
2
RURP6120CC
Typical Performance Curves
30
I
R
, REVERSE CURRENT (µA)
500
100
10
+100
o
C
1
0.1
+25
o
C
0.01
+175
o
C
I
F
, FORWARD CURRENT (A)
10
+100
o
C
+175
o
C
1
+25
o
C
0.5
0
0.5
1
1.5
2
2.5
3
0.001
0
200
400
600
800
1000
1200
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLT-
AGE
90
75
t, RECOVERY TIMES (ns)
60
45
30
15
0
0.5
t
RR
T
C
= +25
o
C, dI
F
/dt = 200A/µs
125
T
C
= +100
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
100
75
t
RR
50
t
A
25
t
B
t
A
t
B
0
0.5
1
I
F
, FORWARD CURRENT (A)
6
1
I
F
, FORWARD CURRENT (A)
6
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +25
o
C
FIGURE 6. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +100
o
C
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
150
125
t, RECOVERY TIMES (ns)
100
t
RR
75
50
t
A
t
B
T
C
= +175
o
C, dI
F
/dt = 200A/µs
6
DC
5
SQ. WAVE
4
3
2
1
0
100
25
0
0.5
1
I
F
, FORWARD CURRENT (A)
6
115
130
145
(
o
C)
160
175
T
C
, CASE TEMPERATURE
FIGURE 7. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +175
o
C
FIGURE 8. CURRENT DERATING CURVE
3
RURP6120CC
Typical Performance Curves
100
C
J
, JUNCTION CAPACITANCE (pF)
(Continued)
80
60
40
20
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
AVL
/(V
AVL
- V
DD
)]
Q
1
AND Q
2
ARE 1000V MOSFETs
Q
1
L
R
+
V
DD
130Ω
1MΩ
DUT
VAVL
12V
Q
2
130Ω
CURRENT
SENSE
V
DD
I
L
I V
I
L
-
12V
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
FORMS
4
RURP6120CC
Plastic Packages
A
ØP
Q
H
1
D
E
1
45
o
D
1
TERM. 4
E
A
1
TO-220AB
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
INCHES
SYMBOL
A
A
1
b
b
1
c
D
D
1
MIN
0.170
0.048
0.030
0.045
0.014
0.590
-
0.395
-
MAX
0.180
0.052
0.034
0.055
0.019
0.610
0.160
0.410
0.030
0.100 TYP
0.200 BSC
0.235
0.100
0.530
0.130
0.149
0.102
0.255
0.110
0.550
0.150
0.153
0.112
MILLIMETERS
MIN
4.32
1.22
0.77
1.15
0.36
14.99
-
10.04
-
MAX
4.57
1.32
0.86
1.39
0.48
15.49
4.06
10.41
0.76
2.54 TYP
5.08 BSC
5.97
2.54
13.47
3.31
3.79
2.60
6.47
2.79
13.97
3.81
3.88
2.84
NOTES
-
-
3, 4
2, 3
2, 3, 4
-
-
-
-
5
5
-
6
-
2
-
-
L
1
b
1
b
c
L
60
o
1
2
3
E
E
1
e
e
1
J
1
e
e
1
H
1
J
1
L
L
1
ØP
Q
NOTES:
LEAD 1. ANODE 1
LEAD 2. CATHODE
LEAD 3. ANODE 2
TERM. 4. CATHODE
1. These dimensions are within allowable dimensions of Rev. J of
JEDEC TO-220AB outline dated 3-24-87.
2. Lead dimension and finish uncontrolled in L
1
.
3. Lead dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder coating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bot-
tom of dimension D.
7. Controlling dimension: Inch.
8. Revision 1 dated 1-93.
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
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