Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Fairchild |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V |
| 最大漏极电流 (Abs) (ID) | 30 A |
| 最大漏极电流 (ID) | 30 A |
| 最大漏源导通电阻 | 0.065 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | P-CHANNEL |
| 最大功率耗散 (Abs) | 135 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| RFP30P06 | RFG30P06 | RF1S30P06SM | RF1S30P06SM9A | |
|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | unknown | compliant | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | 60 V | 60 V | 60 V |
| 最大漏极电流 (Abs) (ID) | 30 A | 30 A | 30 A | 30 A |
| 最大漏极电流 (ID) | 30 A | 30 A | 30 A | 30 A |
| 最大漏源导通电阻 | 0.065 Ω | 0.065 Ω | 0.065 Ω | 0.065 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB | TO-247 | TO-263AB | TO-263AB |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 最大功率耗散 (Abs) | 135 W | 135 W | 135 W | 135 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | YES | YES |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | Fairchild | - | Fairchild | Fairchild |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | - | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
