BCV63; BCV63B
NPN general-purpose double transistors
Rev. 4 — 4 August 2010
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
BCV63
BCV63B
SOT143B
JEITA
-
-
BCV64B
PNP complement
Type number
1.2 Features and benefits
Low current (max. 100 mA)
Low voltage (max. 30 V and 6 V)
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
General-purpose switching and amplification
For use in Schmitt trigger applications
1.4 Quick reference data
Table 2.
Symbol
I
C
V
CEO
h
FE
Quick reference data
Parameter
collector current
collector-emitter voltage
DC current gain
BCV63
BCV63B
open base
V
CE
= 5 V; I
C
= 2 mA
110
200
-
-
800
450
Conditions
Min
-
-
Typ
-
-
Max
100
30
Unit
mA
V
Per transistor
Transistor TR1
NXP Semiconductors
BCV63; BCV63B
NPN general-purpose double transistors
Quick reference data
…continued
Parameter
collector-emitter voltage
DC current gain
BCV63
BCV63B
Conditions
open base
V
CE
= 700 mV; I
C
= 2 mA
[1]
Table 2.
Symbol
V
CEO
h
FE
Min
-
110
200
Typ
-
-
-
Max
6
800
450
Unit
V
Transistor TR2
[1]
Group selection will be done on TR1. Due to matched dies, h
FE
values for TR2 are the same as for TR1.
2. Pinning information
Table 3.
Pin
1
2
3
4
Pinning
Description
collector TR2 and base TR1
collector TR1
emitter TR1 and TR2
base TR2
1
2
3
4
006aab228
Simplified outline
4
3
Graphic symbol
2
1
TR1
TR2
3. Ordering information
Table 4.
Ordering information
Package
Name
BCV63
BCV63B
-
Description
plastic surface-mounted package; 4 leads
Version
SOT143B
Type number
4. Marking
Table 5.
BCV63
BCV63B
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
*D5
*D6
Type number
BCV63_63B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 4 August 2010
2 of 12
NXP Semiconductors
BCV63; BCV63B
NPN general-purpose double transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
EBO
I
C
I
CM
I
B
V
CBO
V
CEO
V
CBO
V
CEO
Per device
P
tot
T
j
T
amb
T
stg
[1]
Parameter
emitter-base voltage
collector current
peak collector current
base current
collector-base voltage
collector-emitter voltage
collector-base voltage
collector-emitter voltage
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open collector
Min
-
-
-
-
Max
6
100
200
100
30
30
6
6
250
150
+150
+150
Unit
V
mA
mA
mA
V
V
V
V
mW
C
C
C
Per transistor
Transistor TR1
open emitter
open base
open emitter
open base
T
amb
25
C
[1]
-
-
-
-
-
-
65
65
Transistor TR2
Device mounted on an FR4 Printed-Circuit Board (PCB).
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
Min
-
Typ
-
Max
500
Unit
K/W
Device mounted on an FR4 PCB.
BCV63_63B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 4 August 2010
3 of 12
NXP Semiconductors
BCV63; BCV63B
NPN general-purpose double transistors
7. Characteristics
Table 8.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
Per transistor
I
CBO
collector-base
cut-off current
collector-emitter
saturation voltage
base-emitter
saturation voltage
DC current gain
BCV63
BCV63B
V
CEsat
V
BEsat
V
BE
f
T
C
c
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
transition frequency
collector capacitance
I
C
= 100 mA; I
B
= 5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
V
CB
= 10 V;
I
E
= i
e
= 0 A; f = 1 MHz
V
CE
= 700 mV;
I
C
= 2 mA
[1]
[2]
Conditions
V
CB
= 30 V; I
E
= 0 A
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
C
I
C
= 10 mA;
I
B
= 0.5 mA
I
C
= 10 mA;
I
B
= 0.5 mA
V
CE
= 5 V; I
C
= 2 mA
[2]
Min
-
-
-
-
Typ
-
-
75
700
Max
15
5
300
-
Unit
nA
A
mV
mV
V
CEsat
V
BEsat
Transistor TR1
h
FE
110
200
-
-
600
-
100
-
-
-
250
850
650
-
-
4
800
450
650
-
750
820
-
-
mV
mV
mV
mV
MHz
pF
[3]
[3]
Transistor TR2
h
FE
DC current gain
BCV63
BCV63B
V
CEsat
V
BE
[1]
[2]
[3]
110
200
I
C
= 100 mA; I
B
= 5 mA
I
C
= 2 mA;
V
CE
= 700 mV
[3]
-
-
250
700
800
450
-
-
mV
mV
collector-emitter
saturation voltage
base-emitter voltage
-
-
Group selection will be done on TR1. Due to matched dies, h
FE
values for TR2 are the same as for TR1.
V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
V
BE
decreases by about 2 mV/K with increasing temperature.
BCV63_63B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 4 August 2010
4 of 12
NXP Semiconductors
BCV63; BCV63B
NPN general-purpose double transistors
600
h
FE
500
(1)
mgt727
1200
V
BE
(mV)
1000
(1)
mgt728
400
(2)
800
(2)
300
600
(3)
200
(3)
400
100
200
0
10
−1
1
10
10
2
I
C
(mA)
10
3
0
10
−2
10
−1
1
10
10
2
10
3
I
C
(mA)
V
CE
= 5 V
(1) T
amb
= 150
C
(2) T
amb
= 25
C
(3) T
amb
=
55 C
V
CE
= 5 V
(1) T
amb
=
55 C
(2) T
amb
= 25
C
(3) T
amb
= 150
C
Fig 1.
BCV63B: DC current gain as a function of
collector current; typical values
10
4
mgt729
Fig 2.
BCV63B: Base-emitter voltage as a function of
collector current; typical values
mgt730
1200
V
BEsat
(mV)
1000
(1)
V
CEsat
(mV)
10
3
800
(2)
600
(3)
10
2
(1)
(3) (2)
400
200
10
10
−1
1
10
10
2
I
C
(mA)
10
3
0
10
−1
1
10
10
2
I
C
(mA)
10
3
I
C
/I
B
= 20
(1) T
amb
= 150
C
(2) T
amb
= 25
C
(3) T
amb
=
55 C
I
C
/I
B
= 10
(1) T
amb
=
55 C
(2) T
amb
= 25
C
(3) T
amb
= 150
C
Fig 3.
BCV63B: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 4.
BCV63B: Base-emitter saturation voltage as a
function of collector current; typical values
BCV63_63B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 4 August 2010
5 of 12
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
