S E M I C O N D U C T O R
RHRU50120
50A, 1200V Hyperfast Diode
Package
SINGLE LEAD JEDEC STYLE TO-218
April 1995
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . +175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
• Planar Construction
ANODE
CATHODE
(FLANGE)
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Description
The RHRU50120 (TA49100) are hyperfast diodes with soft
recovery characteristics (t
RR
< 85ns). They have half the
recovery time of ultrafast diodes and are silicon nitride passi-
vated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
PACKAGING AVAILABILITY
PART NUMBER
RHRU50120
PACKAGE
TO-218
BRAND
RHRU50120
Symbol
K
A
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RHRU50120
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 50
o
C)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
1200
1200
1200
50
100
500
150
50
-65 to +175
UNITS
V
V
V
A
A
A
W
mj
o
C
Copyright
©
Harris Corporation 1995
7-97
File Number
3946.1
Specifications RHRU50120
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
RHRU50120 LIMITS
SYMBOL
V
F
TEST CONDITION
I
F
= 50A, T
C
= +25
o
C
I
F
= 50A, T
C
= +150
o
C
I
R
V
R
= 1200V, T
C
= +25
o
C
V
R
= 1200V, T
C
= +150
o
C
t
RR
I
F
= 1A, dI
F
/dt = 100A/µs
I
F
= 50A, dI
F
/dt = 100A/µs
t
A
t
B
Q
RR
C
J
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (See Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θJC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy. (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
I
F
= 50A, dI
F
/dt = 100A/µs
I
F
= 50A, dI
F
/dt = 100A/µs
I
F
= 50A, dI
F
/dt = 100A/µs
V
R
= 10V, I
F
= 0A
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
50
40
240
150
-
MAX
3.2
2.6
500
1.0
85
100
-
-
-
-
1.0
UNITS
V
V
µA
mA
ns
ns
ns
ns
nC
pF
o
C/W
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
L
1
= SELF INDUCTANCE OF
R
4
+ L
LOOP
R
1
Q
1
+V
1
0
t
2
t
1
R
2
+V
3
Q
2
t
1
≥
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
t
A(MIN)
≤
R
4
10
L
LOOP
DUT
Q
4
0
0.25 I
RM
I
RM
C1
R
4
-V
4
V
RM
V
R
I
F
dI
F
dt
t
A
t
RR
t
B
t
3
0
-V
2
R
3
Q
3
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
7-98
RHRU50120
Typical Performance Curves
300
I
R
, REVERSE CURRENT (µA)
3000
1000
I
F,
FORWARD CURRENT (A)
100
+175
o
C
100
+100
o
C
10
+100
o
C
10
+175
o
C
+25
o
C
1
+25
o
C
1
0
1
2
V
F,
FORWARD VOLTAGE (V)
3
4
0.1
0
200
400
600
800
1000
1200
V
R,
REVERSE VOLTAGE (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
T
C
= +25
o
C
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
T
C
= +100
o
C
100
250
t, RECOVERY TIMES (ns)
t
RR
t, RECOVERY TIMES (ns)
80
200
t
RR
150
t
A
100
t
B
50
60
t
A
40
t
B
20
0
1
10
I
F
, FORWARD CURRENT (A)
50
0
1
10
I
F
, FORWARD CURRENT (A)
50
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +25
o
C
T
C
= +175
o
C
400
FIGURE 6. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +100
o
C
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
50
DC
40
t, RECOVERY TIMES (ns)
300
t
RR
30
SQ. WAVE
200
t
A
100
t
B
20
10
0
1
10
I
F
, FORWARD CURRENT (A)
50
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 7. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +175
o
C
FIGURE 8. CURRENT DERATING CURVE
7-99
RHRU50120
Typical Performance Curves
(Continued)
600
C
J
, JUNCTION CAPACITANCE (pF)
500
400
300
200
100
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
IMAX = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI
2
[VAVL/(VAVL - V
DD
)]
Q
1
AND Q
2
ARE 1000V MOSFETs
Q
1
L
R
+
V
DD
130Ω
1MΩ
DUT
V
AVL
12V
Q
2
130Ω
CURRENT
SENSE
V
DD
I
L
I V
I
L
-
12V
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
7-100
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