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RHRU15090

产品描述150A, 900V, SILICON, RECTIFIER DIODE
产品类别分立半导体    二极管   
文件大小39KB,共3页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
下载文档 详细参数 选型对比 全文预览

RHRU15090概述

150A, 900V, SILICON, RECTIFIER DIODE

RHRU15090规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Renesas(瑞萨电子)
零件包装代码TO-218
包装说明TO-218, 1 PIN
针数1
Reach Compliance Codenot_compliant
ECCN代码EAR99
其他特性FREEWHEELING DIODE
应用HYPERFAST SOFT RECOVERY
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)3 V
JESD-30 代码R-PSFM-D1
JESD-609代码e0
最大非重复峰值正向电流1500 A
元件数量1
相数1
端子数量1
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流150 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散375 W
认证状态Not Qualified
最大重复峰值反向电压900 V
最大反向电流500 µA
最大反向恢复时间0.1 µs
表面贴装NO
技术AVALANCHE
端子面层Tin/Lead (Sn/Pb)
端子形式SOLDER LUG
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED

RHRU15090文档预览

RHRU15090, RHRU150100
April 1995
File Number 3589.2
150A, 900V - 1000V Hyperfast Diodes
RHRU15090 and RHRU150100 (TA49072) are hyperfast
diodes with soft recovery characteristics (t
RR
< 90ns). They
have half the recovery time of ultrafast diodes and are silicon
nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
Features
• Hyperfast with Soft Recovery<90ns
• Operating Temperature+175
o
C
• Reverse Voltage Up To1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER
RHRU15090
RHRU150100
PACKAGE
TO-218
TO-218
BRAND
RHRU15090
RHR150100
Package
JEDEC STYLE TO-218
ANODE
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RHRU15090
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= +42
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
900
900
900
150
300
1500
375
50
-65 to +175
RHRU150100
1000
1000
1000
150
300
1500
375
50
-65 to +175
UNITS
V
V
V
A
A
A
W
mj
o
C
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
RHRU15090, RHRU150100
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
LIMITS
RHRU15090
SYMBOL
V
F
V
F
I
R
TEST CONDITION
I
F
= 150A, T
C
= +25
o
C
I
F
= 150A, T
C
= +150
o
C
V
R
= 900V, T
C
= +25
o
C
V
R
= 1000V, T
C
= +25
o
C
I
R
V
R
= 900V, T
C
= +150
o
C
V
R
= 1000V, T
C
= +150
o
C
t
RR
I
F
= 1A, dI
F
/dt = 100A/µs
I
F
= 150A, dI
F
/dt = 100A/µs
t
A
t
B
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (See Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
R
θJC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy (See Figures 7 and 8).
pw = pulse width.
D = duty cycle.
I
F
= 150A, dI
F
/dt = 100A/µs
I
F
= 150A, dI
F
/dt = 100A/µs
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
65
30
-
MAX
3.0
2.5
500
-
3.0
-
90
100
-
-
0.4
MIN
-
-
-
-
-
-
-
-
-
-
-
RHRU150100
TYP
-
-
-
-
-
-
-
-
65
30
-
MAX
3.0
2.5
-
500
-
3.0
90
100
-
-
0.4
UNITS
V
V
µA
µA
mA
mA
ns
ns
ns
ns
o
C/W
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
R
1
L
1
= SELF INDUCTANCE OF R
4
+L
LOOP
Q
1
+V
1
0
t
2
t
1
R
2
+V
3
Q
2
t
1
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
t
A(MIN)
R
4
10
L
LOOP
DUT
Q
4
0
0.25 I
RM
C1
R
4
I
RM
I
F
dI
F
dt
t
RR
t
A
t
B
t
3
0
-V
2
R
3
Q
3
-V
4
V
R
V
RM
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
2
RHRU15090, RHRU150100
Typical Performance Curves
500
3000
1000
I
F
, FORWARD CURRENT (A)
I
R
, REVERSE CURRENT (µA)
+175
o
C
100
+175
o
C
+100
o
C
+25
o
C
10
100
+100
o
C
10
1.0
+25
o
C
0.1
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
F
, FORWARD VOLTAGE (V)
0.01
0
200
400
600
800
1000
V
R
, REVERSE VOLTAGE (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
120
100
t, RECOVERY TIMES (ns)
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
160
120
DC
80
60
t
RR
t
A
80
SQ. WAVE
40
t
B
20
40
0
1
10
I
F
, FORWARD CURRENT (A)
100 150
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT
I
MAX
= 1A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
AVL
/(V
AVL
- V
DD
)]
Q
1
& Q
2
ARE 1000V MOSFETs
Q
1
FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES
L
R +
V
DD
130Ω
1MΩ
DUT
V
AVL
12V
Q
2
130Ω
CURRENT
SENSE
V
DD
-
I
L
I V
12V
t
0
t
1
t
2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
3

RHRU15090相似产品对比

RHRU15090 RHRU150100
描述 150A, 900V, SILICON, RECTIFIER DIODE 150A, 1000V, SILICON, RECTIFIER DIODE
是否Rohs认证 不符合 不符合
厂商名称 Renesas(瑞萨电子) Renesas(瑞萨电子)
包装说明 TO-218, 1 PIN TO-218, 1 PIN
Reach Compliance Code not_compliant not_compliant
ECCN代码 EAR99 EAR99
其他特性 FREEWHEELING DIODE FREEWHEELING DIODE
应用 HYPERFAST SOFT RECOVERY HYPERFAST SOFT RECOVERY
外壳连接 CATHODE CATHODE
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 3 V 3 V
JESD-30 代码 R-PSFM-D1 R-PSFM-D1
JESD-609代码 e0 e0
最大非重复峰值正向电流 1500 A 1500 A
元件数量 1 1
相数 1 1
端子数量 1 1
最高工作温度 175 °C 175 °C
最低工作温度 -65 °C -65 °C
最大输出电流 150 A 150 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT
最大功率耗散 375 W 375 W
认证状态 Not Qualified Not Qualified
最大重复峰值反向电压 900 V 1000 V
最大反向电流 500 µA 500 µA
最大反向恢复时间 0.1 µs 0.1 µs
表面贴装 NO NO
技术 AVALANCHE AVALANCHE
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 SOLDER LUG SOLDER LUG
端子位置 SINGLE SINGLE

 
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