电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RHRU150120

产品描述150A, 1200V, SILICON, RECTIFIER DIODE, TO-218, 1 PIN
产品类别分立半导体    二极管   
文件大小67KB,共4页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
下载文档 详细参数 全文预览

RHRU150120概述

150A, 1200V, SILICON, RECTIFIER DIODE, TO-218, 1 PIN

RHRU150120规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Renesas(瑞萨电子)
零件包装代码TO-218
包装说明TO-218, 1 PIN
针数1
Reach Compliance Codenot_compliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE
应用HYPERFAST SOFT RECOVERY
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)3.2 V
JESD-30 代码R-PSFM-D1
JESD-609代码e0
最大非重复峰值正向电流1500 A
元件数量1
相数1
端子数量1
最高工作温度175 °C
最大输出电流150 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压1200 V
最大反向恢复时间0.125 µs
表面贴装NO
技术AVALANCHE
端子面层Tin/Lead (Sn/Pb)
端子形式SOLDER LUG
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED

RHRU150120文档预览

RHRU150120
Data Sheet
January 2000
File Number
4049.1
150A, 1200V Hyperfast Diode
The RHRU150120 is a hyperfast diode with soft recovery
characteristics (t
rr
< 100ns). It has half the recovery time of
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49074.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . <100ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplier
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RHRU150120
PACKAGE
TO-218
BRAND
RHR150120
Packaging
SINGLE LEAD JEDEC STYLE TO-218
NOTE: When ordering, use the entire part number.
ANODE
Symbol
K
CATHODE
(FLANGE)
A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RHRU150120
UNITS
V
V
V
A
A
A
W
mJ
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
T
C
= 37.5
o
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
1200
1200
1200
150
300
1500
375
50
-65 to 175
3-111
1-888-INTERSIL or 321-724-7143
|
Copyright
©
Intersil Corporation 2000
RHRU150120
Electrical Specifications
SYMBOL
V
F
I
F
= 150A
I
F
= 150A, T
C
= 150
o
C
I
R
V
R
= 1200V
V
R
= 1200V, T
C
= 150
o
C
t
rr
I
F
= 1A, dI
F
/dt = 200A/µs
I
F
= 150A, dI
F
/dt = 200A/µs
t
a
t
b
Q
RR
C
J
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θJC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
I
F
= 150A, dI
F
/dt = 200A/µs
I
F
= 150A, dI
F
/dt = 200A/µs
I
F
= 150A, dI
F
/dt = 200A/µs
V
R
= 10V, I
F
= 0A
T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
70
40
460
420
-
MAX
3.2
2.6
250
3.0
100
125
-
-
-
-
0.4
UNITS
V
V
µA
mA
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
500
2000
1000
I
R
, REVERSE CURRENT (µA)
175
o
C
I
F
, FORWARD CURRENT (A)
100
100
10
100
o
C
175
o
C
10
100
o
C
25
o
C
1.0
25
o
C
0.1
1
0
0.5
1
1.5
2
2.5
3
3.5
V
F
, FORWARD VOLTAGE (V)
0.01
0
200
400
600
800
1000
1200
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
3-112
RHRU150120
Typical Performance Curves
125
T
C
= 25
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
100
trr
75
200
(Continued)
250
T
C
= 100
o
C, dI
F
/dt = 200A/µs
150
trr
50
ta
100
ta
25
tb
50
tb
0
1
10
I
F
, FORWARD CURRENT (A)
50
150
0
1
10
I
F
, FORWARD CURRENT (A)
50
150
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
T
C
= 175
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
300
trr
200
ta
100
tb
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
400
150
125
DC
100
SQ. WAVE
75
50
25
0
25
0
1
10
I
F
, FORWARD CURRENT (A)
50
150
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
1500
C
J
, JUNCTION CAPACITANCE (pF)
1200
900
600
300
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3-113
RHRU150120
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 8. t
rr
TEST CIRCUIT
I
MAX
= 1.6A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
3-114

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1558  744  1961  1905  567  34  39  56  22  33 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved