BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
Rev. 01 — 17 July 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)
plastic package.
Table 1.
Product overview
Package
NXP
BC846BPN
SOT363
JEITA
SC-88
NPN/NPN
complement
BC846BS
PNP/PNP
complement
BC856BS
Type number
1.2 Features
I
I
I
I
I
I
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors
AEC-Q101 qualified
1.3 Applications
I
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
TR1 (NPN)
h
FE
TR2 (PNP)
h
FE
DC current gain
V
CE
=
−5
V;
I
C
=
−2
mA
200
290
450
DC current gain
V
CE
= 5 V; I
C
= 2 mA
200
300
450
Quick reference data
Parameter
collector-emitter voltage
collector current
Conditions
open base
Min
-
-
Typ
-
-
Max
65
100
Unit
V
mA
Per transistor; for the PNP transistor with negative polarity
NXP Semiconductors
BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
1
2
sym019
Simplified outline
6
5
4
Graphic symbol
6
5
4
TR2
TR1
3
3. Ordering information
Table 4.
Ordering information
Package
Name
BC846BPN
SC-88
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 5.
Marking codes
Marking code
[1]
PJ*
Type number
BC846BPN
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BC846BPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 17 July 2009
2 of 15
NXP Semiconductors
BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Per device
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
T
amb
≤
25
°C
[1]
Min
-
-
-
-
-
-
-
-
-
−55
−65
Max
80
65
6
100
200
200
200
300
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
mW
°C
°C
°C
Per transistor; for the PNP transistor with negative polarity
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
500
P
tot
(mW)
400
006aab618
300
200
100
0
−75
−25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curve SOT363 (SC-88)
BC846BPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 17 July 2009
3 of 15
NXP Semiconductors
BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
in free air
[1]
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
625
230
Unit
K/W
K/W
Per transistor
-
-
416
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
10
0.01
0
006aab619
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC846BPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 17 July 2009
4 of 15
NXP Semiconductors
BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
TR1 (NPN)
I
CBO
collector-base cut-off V
CB
= 50 V; I
E
= 0 A
current
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
°C
emitter-base cut-off
current
DC current gain
V
EB
= 6 V; I
C
= 0 A
V
CE
= 5 V
I
C
= 10
µA
I
C
= 2 mA
V
CEsat
V
BEsat
V
BE
collector-emitter
saturation voltage
base-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 2 mA
I
C
= 10 mA
C
c
C
e
f
T
NF
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
emitter capacitance
transition frequency
noise figure
V
EB
= 0.5 V; I
C
= i
c
= 0 A;
f = 1 MHz
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
V
CE
= 5 V; I
C
= 0.2 mA;
R
S
= 2 kΩ;
f = 10 Hz to 15.7 kHz
V
CE
= 5 V; I
C
= 0.2 mA;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
TR2 (PNP)
I
CBO
collector-base cut-off V
CB
=
−50
V; I
E
= 0 A
current
V
CB
=
−30
V; I
E
= 0 A;
T
j
= 150
°C
emitter-base cut-off
current
DC current gain
V
EB
=
−6
V; I
C
= 0 A
V
CE
=
−5
V
I
C
=
−10 µA
I
C
=
−2
mA
V
CEsat
collector-emitter
saturation voltage
I
C
=
−10
mA;
I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA
-
200
-
-
270
290
−55
−200
-
450
−100
−300
mV
mV
-
-
-
-
-
-
−15
−5
−100
nA
µA
nA
-
200
-
-
-
-
580
-
-
-
100
-
280
300
55
200
755
1000
650
-
1.9
11
-
1.9
-
450
100
300
850
-
700
770
-
-
-
-
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
-
-
-
-
-
-
15
5
100
nA
µA
nA
Conditions
Min
Typ
Max
Unit
I
EBO
h
FE
base-emitter voltage V
CE
= 5 V
-
3.1
-
dB
I
EBO
h
FE
BC846BPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 17 July 2009
5 of 15
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