DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
MBD128
BC846S
NPN general purpose double
transistor
Product data sheet
Supersedes data of 1999 May 28
1999 Sep 01
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
FEATURES
•
Two transistors in one package
•
Reduces number of components and board space
•
No mutual interference between the transistors.
APPLICATIONS
•
General purpose switching and small signal
amplification.
DESCRIPTION
NPN double transistor in an SC-88 (SOT363) plastic six
lead package.
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
MARKING
TYPE NUMBER
BC846S
1
Top view
2
3
1
MAM340
BC846S
handbook, halfpage
6
5
4
5
4
6
TR2
TR1
2
3
Fig.1 Simplified outline (SC-88) and symbol.
MARKING CODE
4Ft
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per transistor
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
total power dissipation
T
amb
≤
25
°C;
note 1
−
300
mW
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
open emitter
open base
open collector
−
−
−
−
−
−65
−
−65
80
65
6
100
200
+150
150
+150
V
V
V
mA
mW
°C
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1999 Sep 01
2
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per transistor
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation
voltage
collector capacitance
transition frequency
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA; note 1
I
C
= 10 mA; I
B
= 0.5 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V;
f = 100 MHz
−
−
−
110
−
−
−
−
100
−
−
−
−
−
−
770
−
−
15
5
PARAMETER
CONDITIONS
MIN.
TYP.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
416
BC846S
UNIT
K/W
MAX.
UNIT
nA
μA
nA
mV
mV
mV
pF
MHz
100
−
100
300
−
1.5
−
1999 Sep 01
3
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
BC846S
handbook, halfpage
10
3
MGL738
handbook, halfpage
1200
MGL739
VCEsat
(mV)
VBE
(mV)
1000
(1)
800
10
2
(1)
(2)
(3)
(2)
600
(3)
400
10
10
−1
1
10
10
2
IC (mA)
10
3
200
10
−1
1
10
10
2
IC (mA)
10
3
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
= 5 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
handbook, full pagewidth
400
MGL740
hFE
(1)
300
200
(2)
(3)
100
0
10
−1
V
CE
= 5 V.
(1) T
amb
= 150
°C.
1
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
10
10
2
IC (mA)
10
3
Fig.4 DC current gain as a function of collector current; typical values.
1999 Sep 01
4
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
PACKAGE OUTLINE
BC846S
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
HE
v
M
A
6
5
4
Q
pin 1
index
A
A1
1
e1
e
2
bp
3
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.30
0.20
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e
1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.25
0.15
v
0.2
w
0.2
y
0.1
OUTLINE
VERSION
SOT363
REFERENCES
IEC
JEDEC
EIAJ
SC-88
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Sep 01
5
测试/测量
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