DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
BC817DPN
NPN/PNP general purpose
transistor
Product data sheet
Supersedes data of 2002 Aug 09
2002 Nov 22
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistor
FEATURES
•
High current (500 mA)
•
600 mW total power dissipation
•
Replaces two SOT23 packaged transistors on same
PCB area.
APPLICATIONS
•
General purpose switching and amplification
•
Complementary driver
•
Half and full bridge driver.
DESCRIPTION
NPN/PNP transistor pair in a SOT457 (SC-74) plastic
package.
MARKING
TR1
6
handbook, halfpage
5
4
6
BC817DPN
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
PARAMETER
collector-emitter voltage
collector current (DC)
peak collector current
MAX.
45
500
1
UNIT
V
mA
A
5
4
TR2
TYPE NUMBER
BC817DPN
MARKING CODE
N4
1
Top view
2
3
MAM445
1
2
3
Fig.1
Simplified outline (SOT457) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
−65
−
−65
T
amb
≤
25
°C;
note 1
−
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
2002 Nov 22
2
total power dissipation
600
mW
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
50
45
5
500
1
200
370
+150
150
+150
V
V
V
mA
A
mA
mW
°C
°C
°C
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
PARAMETER
thermal resistance from junction to note 1
ambient
CONDITIONS
BC817DPN
VALUE
208
UNIT
K/W
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
160
40
−
−
TYP.
−
−
−
−
−
−
−
MAX.
UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
collector-base cut-off current
emitter-base cut-off current
DC current gain
V
CB
= 20 V; I
E
= 0
V
CB
= 20 V; I
E
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 1 V; I
C
= 100 mA; note 1
V
CE
= 1 V; I
C
= 500 mA; note 1
collector-emitter saturation voltage I
C
= 500 mA; I
B
= 50 mA; note 1
base-emitter voltage
V
CE
= 1 V; I
C
= 500 mA;
notes 1 and 2
100
5
100
400
−
700
1.2
mV
V
nA
μA
nA
NPN transistor
C
c
f
T
collector capacitance
transition frequency
V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
V
CB
=
−10
V; I
E
= I
e
= 0; f = 1 MHz
V
CE
=
−5
V; I
C
=
−10
mA;
f = 100 MHz
−
100
5
−
−
−
pF
MHz
PNP transistor
C
c
f
T
Notes
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
2. V
BE
decreases by approximately
−2
mV/K with increasing temperature.
collector capacitance
transition frequency
−
80
9
−
−
−
pF
MHz
2002 Nov 22
3
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistor
BC817DPN
handbook, halfpage
500
MBL747
hFE
400
(1)
1000
handbook, halfpage
IC
(mA)
800
MBL748
(1) (2) (3) (4) (5)
(6)
(7)
300
(2)
600
(8)
(9)
200
(3)
400
(10)
100
200
0
10
−1
1
10
10
2
IC (mA)
10
3
0
0
2
4
6
8
10
VCE (V)
TR1 (NPN)
TR1 (NPN)
V
CE
= 1 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
(1) I
B
= 15 mA.
(2) I
B
= 13.5 mA.
(3) I
B
= 12 mA.
(4) I
B
= 10.5 mA.
(5) I
B
= 9 mA.
(6) I
B
= 7.5 mA.
(7) I
B
= 6 mA.
(8) I
B
= 4.5 mA.
(9) I
B
= 3 mA.
(10) I
B
= 1.5 mA.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Collector current as a function of
collector-emitter voltage; typical values.
2002 Nov 22
4
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistor
BC817DPN
10
3
handbook, halfpage
MBL749
handbook, halfpage
1200
VBE
1000
MBL750
(mV)
VCEsat
(mV)
(1)
800
10
2
(2)
600
(1)
(2)
(3)
(3)
400
10
10
−1
1
10
10
2
IC (mA)
10
3
200
10
−1
1
10
10
2
IC (mA)
10
3
TR1 (NPN)
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
TR1 (NPN)
V
CE
= 1 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Base-emitter voltage as a function of
collector current; typical values.
2002 Nov 22
5
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