BCV64B
PNP general-purpose double transistor
Rev. 4 — 2 August 2010
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose double transistor in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
BCV64B
SOT143B
JEITA
-
BCV63B
PNP complement
Type number
1.2 Features and benefits
Low current (max. 100 mA)
Low voltage (max. 30 V and 6 V)
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
General-purpose switching and amplification
For use in Schmitt trigger applications
1.4 Quick reference data
Table 2.
Symbol
I
C
V
CEO
h
FE
Quick reference data
Parameter
collector current
collector-emitter voltage
DC current gain
open base
V
CE
=
−5
mV;
I
C
=
−2
mA
open base
V
CE
=
−700
V;
I
C
=
−2
mA
[1]
Conditions
Min
-
-
220
Typ
-
-
-
Max
−100
−30
475
Unit
mA
V
Per transistor
Transistor TR1
Transistor TR2
V
CEO
h
FE
[1]
collector-emitter voltage
DC current gain
-
220
-
-
−6
475
V
Due to matched dies, h
FE
values for TR2 are the same as for TR1.
NXP Semiconductors
BCV64B
PNP general-purpose double transistor
2. Pinning information
Table 3.
Pin
1
2
3
4
Pinning
Description
collector TR2 and base TR1
collector TR1
emitter TR1 and TR2
TR1
Simplified outline
4
3
Graphic symbol
2
1
base TR2
1
2
3
TR2
4
006aab230
3. Ordering information
Table 4.
Ordering information
Package
Name
BCV64B
-
Description
plastic surface-mounted package; 4 leads
Version
SOT143B
Type number
4. Marking
Table 5.
BCV64B
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
*C6
Type number
BCV64B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 2 August 2010
2 of 12
NXP Semiconductors
BCV64B
PNP general-purpose double transistor
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
EBO
I
C
I
CM
I
B
V
CBO
V
CEO
V
CBO
V
CEO
Per device
P
tot
T
j
T
amb
T
stg
[1]
Parameter
emitter-base voltage
collector current
peak collector current
base current
collector-base voltage
collector-emitter voltage
collector-base voltage
collector-emitter voltage
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open collector
Min
-
-
-
-
Max
−6
−100
−200
−100
−30
−30
−6
−6
250
150
+150
+150
Unit
V
mA
mA
mA
V
V
V
V
mW
°C
°C
°C
Per transistor
Transistor TR1
open emitter
open base
open emitter
open base
T
amb
≤
25
°C
[1]
-
-
-
-
-
-
−65
−65
Transistor TR2
Device mounted on an FR4 Printed-Circuit Board (PCB).
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
Min
-
Typ
-
Max
500
Unit
K/W
Device mounted on an FR4 PCB.
BCV64B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 2 August 2010
3 of 12
NXP Semiconductors
BCV64B
PNP general-purpose double transistor
7. Characteristics
Table 8.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base
cut-off current
collector-emitter
saturation voltage
base-emitter
saturation voltage
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
Conditions
V
CB
=
−30
V; I
E
= 0 A
V
CB
=
−30
V; I
E
= 0 A;
T
j
= 150
°C
I
C
=
−10
mA;
I
B
=
−0.5
mA
I
C
=
−10
mA;
I
B
=
−0.5
mA
V
CE
=
−5
V;
I
C
=
−2
mA
I
C
=
−100
mA;
I
B
=
−5
mA
I
C
=
−100
mA;
I
B
=
−5
mA
I
C
=
−2
mA;
V
CE
=
−5
V
I
C
=
−10
mA;
V
CE
=
−5
V
f
T
transition frequency
V
CE
=
−5
V;
I
C
=
−10
mA;
f = 100 MHz
V
CB
=
−10
V;
I
E
= i
e
= 0 A;
f = 1 MHz
V
CE
=
−700
mV;
I
C
=
−2
mA
I
C
=
−100
mA;
I
B
=
−5
mA
I
C
=
−2
mA;
V
CE
=
−700
mV
[3]
[1]
[2]
[2]
Min
-
-
-
-
Typ
-
-
−75
−700
Max
−15
−5
−300
-
Unit
nA
μA
mV
mV
Per transistor
V
CEsat
V
BEsat
Transistor TR1
h
FE
V
CEsat
V
BEsat
V
BE
220
-
-
−600
-
100
-
−250
−850
−650
-
-
475
−650
-
−750
−820
-
mV
mV
mV
mV
MHz
[3]
[3]
C
c
collector capacitance
-
4
-
pF
Transistor TR2
h
FE
V
CEsat
V
BE
[1]
[2]
[3]
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
220
-
-
-
−250
−700
475
-
-
mV
mV
Due to matched dies, h
FE
values for TR2 are the same as for TR1.
V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
V
BE
decreases by about 2 mV/K with increasing temperature.
BCV64B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 2 August 2010
4 of 12
NXP Semiconductors
BCV64B
PNP general-purpose double transistor
1000
h
FE
800
mgt715
−1200
V
BE
(mV)
−1000
−800
(1)
mgt716
600
(1)
(2)
−600
−400
−200
(3)
400
(2)
200
(3)
0
−10
−2
−10
−1
−1
−10
−10
2
−10
3
I
C
(mA)
0
−10
−2
−10
−1
−1
−10
−10
2
−10
3
I
C
(mA)
V
CE
=
−5
V
(1) T
amb
= 150
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
V
CE
=
−5
V
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 150
°C
Fig 1.
DC current gain as a function of collector
current; typical values
mgt717
Fig 2.
Base-emitter voltage as a function of collector
current; typical values
mgt718
−10
4
V
CEsat
(mV)
−10
3
−1200
V
BEsat
(mV)
−1000
(1)
−800
(2)
−600
(3)
−10
2
(1)
−400
−200
(3) (2)
−10
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
0
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
I
C
/I
B
= 20
(1) T
amb
= 150
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
I
C
/I
B
= 20
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 150
°C
Fig 3.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 4.
Base-emitter saturation voltage as a function
of collector current; typical values
BCV64B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 2 August 2010
5 of 12
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