BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
Rev. 04 — 18 February 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors
1.3 Applications
I
General-purpose switching and amplification
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
= 5 V; I
C
= 2 mA
Conditions
open base
Min
-
-
200
Typ
-
-
-
Max
45
100
450
Unit
V
mA
Per transistor; for the PNP transistor with negative polarity
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
1
2
sym019
Simplified outline
6
5
4
Graphic symbol
6
5
4
TR2
TR1
3
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
3. Ordering information
Table 3.
Ordering information
Package
Name
BC847BPN
SC-88
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
13*
Type number
BC847BPN
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Per device
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
[2]
Min
-
-
-
-
-
-
-
-
-
-
-
−65
−65
Max
50
45
5
100
200
200
220
250
300
400
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
mW
mW
mW
°C
°C
°C
Per transistor; for the PNP transistor with negative polarity
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
≤
25
°C
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
BC847BPN_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 February 2009
2 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
500
P
tot
(mW)
400
(2)
(1)
006aab419
300
200
100
0
−75
−25
25
75
125
175
T
amb
(°C)
(1) FR4 PCB, mounting pad for collector 1 cm
2
(2) FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curves SOT363 (SC-88)
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
-
-
-
Max
568
500
230
Unit
K/W
K/W
K/W
Per transistor
-
-
-
-
416
313
K/W
K/W
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
BC847BPN_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 February 2009
3 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
10
0.01
0
006aab420
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab421
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
10
0.01
0
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC847BPN_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 February 2009
4 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
Conditions
Min
-
-
-
200
-
[1]
Typ
-
-
-
-
-
-
755
Max
15
5
100
450
100
300
-
Unit
nA
µA
nA
Per transistor; for the PNP transistor with negative polarity
collector-base cut-off V
CB
= 30 V; I
E
= 0 A
current
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
°C
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
TR1 (NPN)
TR2 (PNP)
C
c
collector capacitance I
E
= i
e
= 0 A; V
CB
= 10 V;
f = 1 MHz
TR1 (NPN)
TR2 (PNP)
C
e
emitter capacitance
TR1 (NPN)
TR2 (PNP)
f
T
[1]
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 2 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
mV
mV
mV
-
-
base-emitter voltage I
C
= 2 mA; V
CE
= 5 V
580
600
655
655
700
750
mV
mV
-
-
I
C
= i
c
= 0 A; V
EB
= 0.5 V;
f = 1 MHz
-
-
I
C
= 10 mA; V
CE
= 5 V;
f = 100 MHz
100
-
-
1.5
2.2
pF
pF
11
10
-
-
-
-
pF
pF
MHz
transition frequency
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
BC847BPN_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 February 2009
5 of 14
MEMS传感器
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