SURMOUNT Low, Medium and High
Barrier Silicon Schottky Diodes
TM
V 4.00
MA4E2502 Series
Features
Extremely Low Parasitic Capitance and Inductance
Suface Mountable in Microwave Circuits , No
Wirebonds Required
n
Rugged HMIC Construction with Polyimide Scratch
Protection
n
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300
°
C, 16 hours)
n
Lower Susceptibility to ESD Damage
n
n
Case Style 1246
A
B
Description
The MA4E2502 SurMount
TM
Series Diodes are Silicon Low,
Medium, and High Barrier Schottky Devices fabricated with
the patented Heterolithic Microwave Integrated Circuit
(HMIC) process. HMIC circuits consist of Silicon pedestals
which form diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, microstrip
transmission medium. The combination of silicon and glass
allows HMIC devices to have excellent loss and power
dissipation characteristics in a low profile, reliable device.
The Surmount Schottky devices are excellent choices for
circuits requiring the small parasitics of a beam lead device
coupled with the superior mechanical performance of a chip.
The SurMount structure employs very low resistance silicon
vias to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip. These
devices are reliable, repeatable, and a lower cost performance
solution to conventional devices. They have lower
susceptibility to electrostatic discharge than conventional beam
lead Schottky diodes.
The multi-layer metalization employed in the fabrication of the
Surmount Schottky junctions includes a platinum diffusion
barrier, which permits all devices to be subjected to a 16-hour
non-operating stabilization bake at 300
°C.
The “ 0502 ” outline allows for Surface Mount placement and
multi- functional polarity orientations.
Dim
A
B
C
D Sq.
E Sq.
C
D
E
D
Inches
Millimeters
Min.
0.0445
0.0169
0.0040
0.0128
0.0128
Max.
0.0465
0.0189
0.0080
0.0148
0.0148
Min.
1.130
0.430
0.102
0.325
0.325
Max.
1.180
0.480
0.203
0.375
0.375
Applications
The MA4E2502 Family of SurMount Schottky diodes are
recommended for use in microwave circuits through Ku band
frequencies for lower power applications such as mixers, sub-
harmonic mixers, detectors and limiters. The HMIC
construction facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Surmount diode,
which can be connected to a hard or soft substrate circuit with
solder.
1
Surface Mount Low, Medium and High Barrier Schottky Diodes
Electrical Specifications: @ 25 °C
Model
Number
MA4E2502L
MA4E2502 Series
V 4.00
Type
Recommended
Frequency
Range
DC - 18 GHz
Vf @ 1 mA
( mV )
330 Max
300 Typ
420 Max
400 Typ
700 Max
650 Typ
Vb @ 10 uA
(V)
3 Min
5 Typ
3 Min
5 Typ
3 Min
5 Typ
Ct @ 0V
Rt Slope Resistance
( pF )
( Vf1 - Vf2 )/(10.5mA-9.5mA )
(
Ω
)
0.12 Max
0.10 Typ
0.12 Max
0.10 Typ
0.12 Max
0.10 Typ
16 Typ
20 Max
12 Typ
18 Max
11 Typ
15 Max
Low
Barrier
Medium
Barrier
High
Barrier
MA4E2502M
MA4E2502H
DC - 18 GHz
DC - 18 GHz
Rt is the dynamic slope resistance where
Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA)
Handling
All semiconductor chips should be handled with care to avoid
damage or contamination from perspiration and skin oils. The
use of plastic tipped tweezers or vacuum pickups is strongly
recommended for individual components. The top surface of
the die has a protective polyimide coating to minimize damage.
The rugged construction of these SurMount devices allows the
use of standard handling and die attach techniques. It is
important to note that industry standard electrostatic discharge
(ESD) control is required at all times, due to the sensitive
nature of Schottky junctions.
Bulk handling should insure that abrasion and mechanical
shock are minimized.
Absolute Maximum
1
Parameter
Operating Temperature
Storage Temperature
Forward Current
Reverse Voltage
RF C.W. Incident Power
RF & DC Dissipated Power
Value
-40 °C to +150 °C
-40 °C to +150 °C
20 mA
5V
+ 20 dBm
50 mW
Die Bonding
Die attach for these devices is made simple through the use of
surface mount die attach technology. Mounting pads are
conveniently located on the bottom surface of these devices,
and are opposite the active junction. The devices are well
suited for high temperature solder attachment onto hard
substrates. 80Au/20Sn and Sn63/Pb37 solders are acceptable
for usage.
For Hard substrates, we recommend utilizing a vacuum tip and
force of 60 to 100 grams applied uniformly to the top surface
of the device, using a hot gas bonder with equal heat applied
across the bottom mounting pads of the device. When soldering
to soft substrates, it is recommended to use a lead-tin interface
at the circuit board mounting pads. Position the die so that its
mounting pads are aligned with the circuit board mounting
pads. Reflow the solder paste by applying Equal heat to the
circuit at both die-mounting pads. The solder joint must Not be
made one at a time, creating un-equal heat flow and thermal
stress. Solder reflow should Not be performed by causing heat
to flow through the top surface of the die. Since the HMIC
glass is transparent, the edges of the mounting pads can be
visually inspected through the die after die attach is completed.
1. Exceeding any of these values may result in permanent
damage
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Surface Mount Low, Medium and High Barrier Schottky Diodes
MA4E2502 Series
V 4.00
MA4E2502L Low Barrier SPICE PARAMETERS
Is
(nA)
26
Rs
(
Ω
)
12.8
N
1.20
Cj0
( pF )
1.0 E-2
M
0.5
Ik
(mA)
14
Cjpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
FC
0.5
BV
(V)
5.0
IBV
(mA)
1.0 E-2
MA4E2502M Medium Barrier SPICE PARAMETERS
Is
(nA)
5 E-1
Rs
(
Ω
)
9.6
N
1.20
Cj0
( pF )
1.0 E-02
M
0.5
Ik
(mA)
10
Cjpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
FC
0.5
BV
(V)
5.0
IBV
(mA)
1.0 E-2
MA4E2502H High Barrier SPICE PARAMETERS
Is
(nA)
5.7 E-2
Rs
(
Ω
)
6.5
N
1.20
Cj0
( pF )
1.0 E-02
M
0.5
Ik
(mA)
4
Cjpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
FC
0.5
BV
(V)
5.0
IBV
(mA)
1.0 E-2
Circuit Mounting Dimensions (Inches)
0.020
0.020
0.020
0.020
0.013
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Surface Mount Low, Medium and High Barrier Schottky Diodes
Ordering Information
Part Number
MA4E2502L-1246W
MA4E2502L-1246
MA4E2502L-1246T
MA4E2502M-1246W
MA4E2502M-1246
MA4E2502M-1246T
MA4E2502H-1246W
MA4E2502H-1246
MA4E2502H-1246T
Package
Wafer on Frame
Die in Carrier
Tape/Reel
Wafer on Frame
Die in Carrier
Tape/Reel
Wafer on Frame
Die in Carrier
Tape/Reel
MA4E2502 Series
V 4.00
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
