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SMUN5311DW Series

Elektronische Bauelemente

NPN / PNP

Digital Small Signal Transistors

RoHS Compliant Product

A suffix of “-C” indicates halogen-free.

DESCRIPTION

The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic

bias network consisting of two resistors; a series base resistor and a base−emitter

resistor. These digital transistors are designed to replace a single device and its

external resistor bias network. The BRT eliminates these individual components by

integrating them into a single device. In the SMUN5311DW series, two

complementary BRT devices are housed in the SOT−363 package which is ideal

for low power surface mount applications where board space is at a premium.

SOT-363

A

E

L

B

FEATURE

Simplifies circuit design

Reduces board space

Reduces component count

Available in 8 mm, 7 inch/3000 unit tape and reel

The devices are Pb-Free

6

5

4

F

DG

K

C

H

J

REF.

A

B

C

D

E

F

Q

2

R

2

R

1

2

R

1

R

2

Q

1

3

Millimeter

Min.

Max.

2.00

2.20

2.15

2.45

1.15

1.35

0.90

1.10

1.20

1.40

0.15

0.35

REF.

G

H

J

K

L

Millimeter

Min.

Max.

0.100 REF.

0.525 REF.

0.08

0.15

8°

0.650 TYP.

MAXIMUM RATINGS AND THERMAL CHARACTERISTICS

(T

A

= 25° unless otherwise noted, common for Q1 and Q 2, minus sign for Q1(PNP) omitted)

C

PARAMETER

Collector - Base Voltage

Collector - Emitter Voltage

Collector Currrent – Continuous

SYMBOL

V

CBO

V

CEO

I

C

VALUE

50

100

187(1)

256(2)

1.5(1)

2.0(2)

670(1)

490(2)

250(1)

385(2)

2.0(1)

3.0(2)

493(1)

325(2)

188(1)

208(2)

-55~150

UNIT

Vdc

mAdc

ONE JUNCTION HEATED THERMAL CHARACTERISTICS

Total Device Dissipation, T

A

=25°

C

P

D

Total Device Dissipation, Derate above 25°

C

Thermal Resistance, Junction to Ambient

R

θJA

mW

mW/°

C

°

C/W

BOTH JUNCTION HEATED THERMAL CHARACTERISTICS

Total Device Dissipation, T

A

=25°

C

P

D

Total Device Dissipation, Derate above 25°

C

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Lead

Junction Temperature & Storage Temperature

Note:

1. FR-4 @ minimum pad

2. FR-4 @ 1.0 x 1.0 inch pad

R

θJA

R

θJL

T

J

,T

STG

mW

mW/°

C

°

C/W

°

C/W

°

C

18-Dec-2009 Rev. A

Page 1 of 28

SMUN5311DW Series

Elektronische Bauelemente

NPN / PNP

Digital Small Signal Transistors

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise noted)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector-Base Cutoff Voltage

Collector-Emitter Cutoff Current

SMUN5311DW

SMUN5312DW

SMUN5313DW

SMUN5314DW

SMUN5315DW

Emitter-Base

Cutoff Current

SMUN5316DW

SMUN5330DW

SMUN5331DW

SMUN5332DW

SMUN5333DW

SMUN5334DW

SMUN5335DW

SMUN5311DW

SMUN5312DW

SMUN5313DW

SMUN5314DW

SMUN5335DW

Collector-Emitter

Saturation Voltage

SMUN5330DW

SMUN5331DW

SMUN5315DW

SMUN5316DW

SMUN5332DW

SMUN5333DW

SMUN5334DW

SMUN5311DW

SMUN5312DW

SMUN5313DW

SMUN5314DW

SMUN5315DW

DC Current Gain

SMUN5316DW

SMUN5330DW

SMUN5331DW

SMUN5332DW

SMUN5333DW

SMUN5334DW

SMUN5335DW

Note:

3. Pulse test: pulse width <300

µS,

duty cycle<2.0%

h

FE

V

CE(sat)

I

EBO

SYMBOL

V

(BR)CBO

V

(BR)CEO

I

CBO

I

CEO

MIN.

50

-

35

60

80

160

3.0

8.0

15

80

TYP.

-

3

MAX.

-

100

500

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.2

0.25

-

UNIT

V

nA

TEST CONDITION

I

C

=10µA, I

E

=0

I

C

=2mA, I

B

= 0

V

CB

=50V, I

E

=0

V

CE

=50V, I

B

=0

OFF CHARACTERISTICS

mA

V

EB

=6V, I

C

=0

ON CHARACTERISTICS

-

60

100

140

350

5.0

15

30

200

150

140

I

C

=10mA, I

B

=0.3mA

Vdc

I

C

=10mA, I

B

=5mA

I

C

=10mA, I

B

=1mA

V

CE

=10V, I

C

=5mA

18-Dec-2009 Rev. A

Page 2 of 28

SMUN5311DW Series

Elektronische Bauelemente

NPN / PNP

Digital Small Signal Transistors

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise noted)(Continued)

PARAMETER

SMUN5311DW

SMUN5312DW

SMUN5314DW

SMUN5315DW

SMUN5316DW

Output Voltage(On)

SMUN5330DW

SMUN5331DW

SMUN5332DW

SMUN5333DW

SMUN5334DW

SMUN5335DW

SMUN5313DW

SMUN5311DW

SMUN5312DW

SMUN5313DW

SMUN5314DW

SMUN5333DW

Output Voltage(Off)

SMUN5334DW

SMUN5335DW

SMUN5330DW

SMUN5315DW

SMUN5316DW

SMUN5331DW

SMUN5332DW

SMUN5311DW

SMUN5312DW

SMUN5313DW

SMUN5314DW

SMUN5315DW

Input Resistor

SMUN5316DW

SMUN5330DW

SMUN5331DW

SMUN5332DW

SMUN5333DW

SMUN5334DW

SMUN5335DW

SMUN5311DW

SMUN5312DW

SMUN5313DW

SMUN5314DW

SMUN5315DW

Resistor Ratio

SMUN5316DW

SMUN5330DW

SMUN5331DW

SMUN5332DW

SMUN5333DW

SMUN5334DW

SMUN5335DW

Note:

3. Pulse test: pulse width <300

µS,

duty cycle<2.0%

R1/R2

R1

V

OH

V

OL

SYMBOL

MIN.

-

4.9

7.0

15.4

32.9

7.0

3.3

0.7

1.5

3.3

15.4

1.54

0.8

0.17

-

0.8

0.055

0.38

0.038

TYP.

3

MAX.

0.2

-

13

28.6

61.1

13

6.1

1.3

2.9

6.1

28.6

2.86

1.2

0.25

-

1.2

0.185

0.56

0.056

UNIT

TEST CONDITION

ON CHARACTERISTICS

-

10

22

47

10

4.7

1.0

2.2

4.7

22

2.2

1.0

0.21

-

1.0

0.1

0.47

0.047

Vdc

V

CC

=5V, V

B

=2.5V, R

L

=1 K

V

CC

=5V, V

B

=3.5V, R

L

=1 K

V

CC

=5V, V

B

=0.5V, R

L

=1 K

Vdc

V

CC

=5V, V

B

=0.05V, R

L

=1 K

V

CC

=5V, V

B

=0.25V, R

L

=1 K

K

18-Dec-2009 Rev. A

Page 3 of 28

SMUN5311DW Series

Elektronische Bauelemente

NPN / PNP

Digital Small Signal Transistors

DEVICE MARKING AND RESISTOR VALUES

DEVICE

SMUN5311DW

SMUN5312DW

SMUN5313DW

SMUN5314DW

SMUN5315DW

SMUN5316DW

MARKING

11

12

13

14

15

16

R1(K)

10

22

47

10

4.7

R2(K)

10

22

47

∞

DEVICE

SMUN5330DW

SMUN5331DW

SMUN5332DW

SMUN5333DW

SMUN5334DW

SMUN5335DW

MARKING

30

31

32

33

34

35

R1(K)

1.0

2.2

4.7

22

2.2

R2(K)

1.0

2.2

4.7

47

CHARACTERISTIC CURVES

ALL SMUN5311DW

SERIES DEVICES

300

P

D

, POWER DISSIPATION (mW)

250

200

150

100

50

0

R

θ

JA

= 490°

C/W

50

0

50

100

C)

T

A

, AMBIENT TEMPERATURE (°

150

Figure 1. Derating Curve

18-Dec-2009 Rev. A

Page 4 of 28

SMUN5311DW Series

Elektronische Bauelemente

NPN / PNP

Digital Small Signal Transistors

CHARACTERISTIC CURVES

TYPICAL ELECTRICAL CHARACTERISTICS

VCE(sat)COLLECT VOLAGE (VOL

,

OR

T

TS)

1

I /I = 10

C B

T

A

= 25 C

-

°

25 C

°

0.1

75 C

°

SMUN531

1DW NPN TRANSISTOR

1000

V

CE

= 10 V

°

T

A

= 57C

25 C

°

-25C

°

100

0.01

0.001

0

hFE, DC CURRENT

GAIN (NORMALIZED)

2

0

40

I , COLLECT CURRENT (mA)

OR

C

50

10

1

10

OR

I , COLLECT CURRENT (mA)

C

100

Figure 2. V

CE(sat)

versus I

C

Figure 3. DC Current Gain

4

100

25 C

°

75 C

°

T

A

= 25 C

-

°

I , COLLECT CURRENT(mA)

OR

C

, ACIT

Cob CAP ANCE (pF)

3

f = 1 MHz

I = 0 V

E

°

C

T

A

= 25

10

1

2

0.1

1

0.01

V

O

= 5 V

0.001

0

1

2

5

6

7

3

4

V

in

INPUT TAGE (VOL

,

VOL

TS)

8

9

10

0

1

0

20

30

40

VOL

TS)

V

R

, REVERSE BIASTAGE (VOL

50

Figure 4. Output Capacitance

Figure 5. Output Current versus Input Voltage

10

V

O

= 0.2 V

T

A

= 25 C

-

°

25 C

°

75 C

°

1

Vin INPUT TAGE (VOL

,

VOL

TS)

0.1

0

10

2

0

30

40

I , COLLECT CURRENT (mA)

OR

C

50

Figure 6. Input Voltage versus Output Current

18-Dec-2009 Rev. A

Page 5 of 28

SMUN5335DW

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