SMS0610
Elektronische Bauelemente
-0.185A, -60V,R
DS(ON)
7.5
Ω
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Features
* Super High Dense Cell Design
For Low R
DS(ON)
* Rugged And Reliable
* SOT-23 Package
S
2
A
L
3
Top View
SOT-23
Dim
A
B
1
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
B
C
D
D
G
C
J
K
Drain
Gate
Source
G
H
J
K
L
S
V
D
H
All Dimension in mm
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Drain-Source Diode Forward Current
1
Pulsed Drain Current
2
Symbol
V
DS
V
GS
o
I
D
@T
J
=125
C
Ratings
-60
±20
-185
-1
-250
360
-55~+150
Unit
V
V
mA
A
mA
mW
o
I
S
I
DM
o
P
D
@T
A
=25
C
Total Power Dissipation
1
Operating Junction and Storage Temperature Range
Tj, Tstg
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
1
Symbol
Rthj-a
Ratings
350
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
5
SMS0610
Elektronische Bauelemente
-0.185A, -60V,R
DS(ON)
7.5
Ω
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
o
Symbol
BV
DSS
V
SD
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
I
D(ON)
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
-60
_
Typ.
_
Max.
_
Unit
V
V
V
uA
uA
Test Condition
V
GS
=0V, I
D
=-10uA
Forward On Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
o
C
)
-0.75
_
_
_
_
_
_
-1.4
I
D
=-200 m A,V
GS
=0V.
V
DS
=V
GS,
I
D
=-250 uA
V
GS
=
±20V,VDS=0V
V
DS
=-60V,V
GS
=0
V
GS
=-10V, I
D
=-0.5A
-1
_
_
_
-3
±
10
-1
7.5
10
_
Static Drain-Source On-Resistance
_
Ω
V
GS
=-4.5V, I
D
=-0.025A
On-State Drain Current
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
600
_
_
_
_
_
_
_
mA
V
DS
=-10V,V
GS
=-10V
2.8
6.5
10
7.2
80
11
4
430
_
_
_
_
_
_
_
V
DD
=-25V
nS
I
D
=-120mA
V
GS
=-10V
R
G
=6
Ω
pF
V
GS
=0V
V
DS
=-25V
f=1.0MHz
_
_
mS
V
DS
=-10V, I
D
=-0.1A
Notes: 1.Surface
mounted on FR4 board;
t
≦
10 sec.
2.Pulse width
≦
300us, dutycycle
≦
2%.
3.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of
5
SMS0610
Elektronische Bauelemente
-0.185A, -60V,R
DS(ON)
7.5
Ω
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
1.4
1.2
V
GS
= -10V
-6.0V
-4.5V
1.2
-4.0V
V
DS
= -10V
1.0
0.8
0.6
0.4
0.2
0.0
0
5
10
15
20
25
30
o
-55 C
25 C
o
-I
D
, Drain Current (A)
1.0
0.8
0.6
0.4
0.2
0.0
-3.5V
-I
D
, Drain Current (A)
T
A
= 125 C
o
-3.0V
-2.0V
-V
DS
, Drain-to-Source Voltage (V)
1
1.5
2
2.5
3
3.5
4
4.5
-V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Thansfer Characteristics
R
DS(ON),
Normalized
Drain-Source,On-Resistance (Ω)
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
I
D
= -0.5A
V
GS
= -10V
C, Capacitance (pF)
80
Ciss
60
40
20
Coss
0
0
10
Crss
20
30
40
50
60
-V
DS
, Drain-to-Source Voltage (V)
Tj
,
Junction Temperature ( C)
o
0
25
50
75
100
125
150
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
R
DS(ON),
On-Resistance (Ω)
I
D
= -0.25A
4
R
DS(ON),
Normalized
Drain-Source,On-Resistance (Ω)
5
2.2
2.0
1.8
1.6
-3.5V
1.4
1.2
1.0
0.8
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-4.0V
-4.5V
-5.0V
-5.5V
V
GS
= -3.0V
3
T
A
= 125 C
o
2
1
T
A
= 25 C
0
2
4
6
8
10
o
-V
GS
, Gate-to-Source Voltage (V)
-I
D
, Drain Current (A)
Figure 5. On-Resistance Variation
with Gate-to-Source Voltage.
http://www.SeCoSGmbH.com/
Figure 6. On-Resistance Variation with
Drain Current and Gate Voltage.
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3
of
5
SMS0610
Elektronische Bauelemente
-0.185A, -60V,R
DS(ON)
7.5
Ω
P-Channel Enhancement Mode Power Mos.FET
P(pk), Peak Transient Power (W)
5
-I
S
, Source-Drain Current (A)
4
Single Pulse
o
R
θJA
= 350 C/W
o
T
A
= 25 C
10
V
GS
= 0V
1
T
A
= 125 C
25 C
0.01
-55 C
o
o
3
o
0.1
2
1
0.001
0.0001
0
0.01
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
t
1
, Time (sec)
-V
SD
,
Body Diode Forward Voltage (V)
Figure 7. Single Pulse Maximum
Power Dissipation
Figure 8. Body Diode Forward Voltage
Variation with Source Current
-V
GS
, Gate to Source Voltage (V)
100
I
D
= -0.5A
80
-48V
60
V
DS
= -12V
10
-I
D
, Drain Current (A)
-24V
1
R
(O
DS
N)
100us
Li
mit
0.1
10s 1s
100
10m
1m
s
s
ms
40
DC
20
0.01
0
0
0.001
V
GS
= 10V
Single Pulse
o
T
A
= 25 C
1
10
60 100
Qg
,
Total Gate Charge (nC)
0.4
0.8
1.2
1.6
2.0
-V
DS
,
Drain-to-Source Voltage (V)
Figure 9. Gate Charge
Figure 10. Maximum Safe
Operating Area
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of
5
SMS0610
Elektronische Bauelemente
-0.185A, -60V,R
DS(ON)
7.5
Ω
P-Channel Enhancement Mode Power Mos.FET
V
DD
V
IN
V
GS
R
GEN
G
S
V
IN
t
on
t
d(on)
t
r
90%
t
off
t
d(off)
90%
10%
R
L
D
V
OUT
t
f
V
OUT
10%
90%
50%
10%
50%
INVERTED
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
1
Transient Thermal Impedance
r
(t), Normalized Effective
0.5
0.2
0.1
0.05
Duty Cycle = 0.5
0.2
0.1
0.0.5
0.02
P
DM
t1
t2
0.01
0.01
Single Pulse
1. R
θJA(t)
= r(t)*R
θJA
2. R
θJA
= see datasheet
3. T
JM -
T
A
= P
DM
*R
θJA(t)
4. Duty Cycle, D = t1/t2
0.001
10
-4
10
-3
10
-2
10
-1
1
10
10
2
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
5
of
5
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