SMG2305PE
Elektronische Bauelemente
-4.5 A, -20 V, R
DS(ON)
43 m
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low R
DS(on)
and to
ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power management
in portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
A
3
SC-59
L
3
Top View
1
2
C B
1
2
K
E
D
FEATURES
Low R
DS(on)
provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board space.
Fast switching speed.
High performance trench technology.
F
G
REF.
A
B
C
D
E
F
H
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
J
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
LeaderSize
7’ inch
ESD
Protection
Diode
2KV
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
T
A
=25°C
T
A
=70°C
Operating Junction and Storage Temperature Range
Power Dissipation
1
t
≦
5 sec
Steady-State
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
STG
Rating
-20
±8
-4.5
-3.6
-10
1.25
0.8
-55 ~ 150
100
150
Unit
V
V
A
A
W
°C
Thermal Resistance Data
Maximum Junction to Ambient
1
R
θJA
°C/W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jan-2011 Rev. B
Page 1 of 4
SMG2305PE
Elektronische Bauelemente
-4.5 A, -20 V, R
DS(ON)
43 m
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
V
GS(th)
I
GSS
I
DSS
I
D(ON)
-0.7
-
-
-
-10
-
Drain-Source On-Resistance
1
R
DS(ON)
-
-
Forward Transconductance
1
Diode Forward Voltage
g
FS
V
SD
-
-
-
-
-
-
-
-
-
-
12
-0.60
-
±100
-1
-10
-
43
54
120
-
-
S
V
mΩ
V
nA
μA
A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= 0V, V
GS
= ±8V
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
=55°C
V
DS
= -5V, V
GS
= -4.5V
V
GS
= -4.5V, I
D
= -3.6A
V
GS
= -2.5V, I
D
= -3.1A
V
GS
= -1.8V, I
D
= -2.7A
V
DS
= -5V,
,
I
D
= -1.25A
I
S
= -0.46A, V
GS
= 0V
Typ
Max
Unit
Test Conditions
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
Td
(ON)
T
r
Td
(OFF)
T
f
-
-
-
-
-
-
-
12.0
2.0
2.0
6.5
20
31
21
-
-
-
-
-
-
-
nS
I
L
= -1A, V
DD
= -10V
V
GEN
= -4.5V
R
G
= 6Ω
nC
I
D
= -2.4A
V
DS
= -5V
V
GS
= -4.5V
Notes:
1.
Pulse test：PW
≦
300 us duty cycle
≦
2%.
2.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jan-2011 Rev. B
Page 2 of 4
SMG2305PE
Elektronische Bauelemente
-4.5 A, -20 V, R
DS(ON)
43 m
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jan-2011 Rev. B
Page 3 of 4
SMG2305PE
Elektronische Bauelemente
-4.5 A, -20 V, R
DS(ON)
43 m
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jan-2011 Rev. B
Page 4 of 4
This datasheet has been downloaded from:
www.EEworld.com.cn
Free Download
Daily Updated Database
100% Free Datasheet Search Site
100% Free IC Replacement Search Site
Convenient Electronic Dictionary
Fast Search System
www.EEworld.com.cn
All Datasheets Cannot Be Modified Without Permission
Copyright © Each Manufacturing Company
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
