SMG2319P
Elektronische Bauelemente
-2.1A , -30V , R
DS(ON)
200 m
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize
high cell density process. Low R
DS(on)
assures minimal
power loss and conserves energy, making this
device ideal for use in power management circuitry.
1
SC-59
A
3
3
L
Top View
2
C B
1
2
FEATURES
K
E
D
Low R
DS(on)
provides higher efficiency and extends
battery life.
Fast Switch.
Low Gate Charge.
Miniature SC-59 Surface Mount Package Saves
Board Space.
F
G
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
H
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
J
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
APPLICATION
Voltage control small signal switch, power management
in portable and battery-powered products such as computer
portable electronics and other battery power application.
1
3
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
Leader Size
7’ inch
2
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
Power Dissipation
1
1
Symbol
V
DS
V
GS
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
S
P
D
T
J
, T
STG
T
A
=25°C
T
A
=70°C
Ratings
-30
±20
-2.1
-1.7
±10
-0.4
1.25
0.8
-55 ~ 150
250
285
Unit
V
V
A
A
A
W
°C
Operating Junction and Storage Temperature Range
t≦5 sec
Steady-State
Thermal Resistance Data
Maximum Junction to Ambient
1
R
θJA
°C/W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 1 of 5
SMG2319P
Elektronische Bauelemente
-2.1A , -30V , R
DS(ON)
200 m
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
-
-
-
-
-
-
-
2
-0.7
Max.
-1
-10
±100
-
-
200
300
-
-1.2
Unit
Test Conditions
V
DS
= -24V, V
GS
=0
V
DS
= -24V, V
GS
=0, T
J
=55°C
V
DS
=0, V
GS
= ±20V
V
DS
=V
GS
, I
D
= -250μA
V
DS
= -5V, V
GS
= -4.5V
V
GS
= -10V, I
D
= -2.1A
V
GS
= -4.5V, I
D
= -1.7A
V
DS
= -5V,
,
I
D
= -2.1A
I
S
= -0.4A, V
GS
=0
Static
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Threshold Voltage
On-State Drain Current
1
Drain-Source On-Resistance
Forward Transconductance
1
Diode Forward Voltage
1
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
-
-
-
-1.3
-3
-
-
-
-
μA
nA
V
A
mΩ
S
V
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
Td
(ON)
T
r
Td
(OFF)
T
f
-
-
-
-
-
-
-
3.4
0.8
1.5
8
18
52
39
-
-
-
-
-
-
-
nS
V
DS
= -10V
V
GEN
= -10V
R
G
=50Ω
I
D
= -1.1A
nC
I
D
= -2.1A
V
DS
= -10V
V
GS
= -5V
Notes:
1.
Pulse test：PW
≦
300 us duty cycle
≦
2%.
2.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 2 of 5
SMG2319P
Elektronische Bauelemente
-2.1A , -30V , R
DS(ON)
200 m
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 3 of 5
SMG2319P
Elektronische Bauelemente
-2.1A , -30V , R
DS(ON)
200 m
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 4 of 5
SMG2319P
Elektronische Bauelemente
-2.1A , -30V , R
DS(ON)
200 m
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 5 of 5
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