SMG2342N
Elektronische Bauelemente
5.2 A, 40 V, R
DS(ON)
86 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High
Cell Density trench process to provide Low R
DS(on)
and to
ensure minimal power loss heat dissipation. Typical applications
are DC-DC converters and power management in portable and
battery-powered products such as computers, printer , PCMCIA
cards, cellular and cordless telephones.
A
3
SC-59
L
3
Top View
1
2
C B
1
2
K
E
D
FEATURES
Low R
DS(on)
provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board Space.
Fast switching speed.
High performance trench technology.
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
LeaderSize
7’ inch
1
3
2
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
Operating Junction and Storage Temperature Range
Maximum Junction to Ambient
1
Notes
1
2
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
Symbol
V
DS
V
GS
I
D
@ T
A
=25°C
I
D
@ T
A
=70°C
Ratings
40
±20
5.2
4.1
30
1.6
1.3
0.8
-55 ~ 150
100
166
Unit
V
V
A
A
A
A
W
W
°C
°C
/ W
I
D
I
DM
I
S
P
D
@ T
A
=25°C
P
D
@ T
A
=70°C
P
D
Tj, Tstg
Thermal Resistance Ratings
t
≦
5 sec
Steady State
R
JA
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Dec-2010 Rev. A
Page 1 of 2
SMG2342N
Elektronische Bauelemente
5.2 A, 40 V, R
DS(ON)
86 m
N-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Symbol Min.
V
GS(th)
I
GSS
1.0
-
-
Typ. Max.
-
-
-
-
-
-
-
40
0.7
-
±100
1
Unit
V
nA
Test Conditions
V
DS
=V
GS
, I
D
= 250uA
V
DS
= 0V, V
GS
= 20V
V
DS
= 32V, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
-
25
-
86
uA
V
DS
= 32V, V
GS
= 0V, T
J
= 55°C
A
V
DS
= 5V, V
GS
= 10V
V
GS
= 10V, I
D
= 5.2A
mΩ
-
128
-
-
S
V
V
GS
= 4.5V, I
D
= 3.7A
V
DS
= 15V, I
D
= 5.2A
I
S
= 2.3A, V
GS
= 0V
On-State Drain Current
1
I
D(on)
20
-
Drain-Source On-Resistance
1
R
DS(ON)
Forward Transconductance
1
Diode Forward Voltage
g
fs
V
SD
-
-
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Notes
1
2
Pulse test：PW
≦
300 us duty cycle
≦
2%.
Guaranteed by design, not subject to production testing.
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
4.0
1.1
1.4
16
5
23
3
-
-
-
-
-
nS
-
-
V
DD
= 25V, V
GEN
= 10V,
R
L
= 25, I
D
= 1A
nC
V
DS
= 15V, V
GS
= 4.5V,
I
D
= 5.2A
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Dec-2010 Rev. A
Page 2 of 2
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