SMG2325P
Elektronische Bauelemente
-3.6 A, -20 V, R
DS(ON)
55 m
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High
Cell Density trench process to provide Low R
DS(on)
and to ensure
minimal power loss and heat dissipation. Typical applications
are DC-DC converters and power management in portable and
battery-powered products such as computers, printer , PCMCIA
cards, cellular and cordless telephones.
A
3
SC-59
L
3
Top View
1
2
C B
1
2
K
E
D
FEATURES
Low R
DS(on)
provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board Space.
Fast switching speed.
High performance trench technology.
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
LeaderSize
7’ inch
1
3
2
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
Operating Junction and Storage Temperature Range
Maximum Junction to Ambient
1
Notes
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Symbol
V
DS
V
GS
I
D
@ T
A
=25°C
I
D
@ T
A
=70°C
Ratings
-20
±12
-3.6
-2.9
-10
±0.46
1.25
0.8
-55 ~ 150
100
166
Unit
V
V
A
A
A
A
W
W
°C
°C
/ W
I
D
I
DM
I
S
P
D
@ T
A
=25°C
P
D
@ T
A
=70°C
P
D
Tj, Tstg
Thermal Resistance Data
t
≦
5 sec
Steady State
R
JA
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
05-Jan-2011 Rev. A
Page 1 of 4
SMG2325P
Elektronische Bauelemente
-3.6 A, -20 V, R
DS(ON)
55 m
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Symbol
V
GS(th)
I
GSS
Min.
-0.7
-
-
Zero Gate Voltage Drain Current
I
DSS
-
On-State Drain Current
1
I
D(on)
-10
-
Drain-Source On-Resistance
1
R
DS(ON)
-
-
Forward Transconductance
1
Diode Forward Voltage
g
fs
V
SD
-
-
-
-
-
-
-
12
-0.6
-10
-
55
89
200
-
-
S
V
mΩ
A
Typ.
-
-
-
Max.
-
±100
-1
μA
V
DS
= -16V, V
GS
= 0V, T
J
= 55°C
V
DS
= -5V, V
GS
= -4.5V
V
GS
= -4.5V, I
D
= -3.6A
V
GS
= -2.5V, I
D
= -2.8A
V
GS
= -1.8V, I
D
= -1.8A
V
DS
= -5V, I
D
= -3.6A
I
S
= -0.46A, V
GS
= 0V
Unit
V
nA
Test Conditions
V
DS
=V
GS
, I
D
= -250uA
V
DS
= 0V, V
GS
= ±8V
V
DS
= -16V, V
GS
= 0V
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
16.7
1.8
1.9
9
4
25
20
-
-
-
-
-
nS
-
-
V
DD
= -10V, V
GEN
= -4.5V,
R
G
= 6, I
L
= -1A
nC
V
DS
= -5V, V
GS
= -4.5V,
I
D
= -3.6A
Notes
1 Pulse test：PW
≦
300 us duty cycle
≦
2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
05-Jan-2011 Rev. A
Page 2 of 4
SMG2325P
Elektronische Bauelemente
-3.6 A, -20 V, R
DS(ON)
55 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
05-Jan-2011 Rev. A
Page 3 of 4
SMG2325P
Elektronische Bauelemente
-3.6 A, -20 V, R
DS(ON)
55 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
05-Jan-2011 Rev. A
Page 4 of 4
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