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SM2200A

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
产品类别分立半导体    二极管   
文件大小259KB,共3页
制造商SECOS
官网地址http://www.secosgmbh.com/
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SM2200A概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

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SM2200A
Elektronische Bauelemente
Voltage 200 V
2.0 Amp Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Current Capability
Extremely Low Thermal Resistance
For Surface Mount Application
Higher Temp Soldering : 250°C for 10 Seconds at Terminals
Low Revise Current
A
SMA
B
MECHANICAL DATA
C
Case: Molded Plastic
Epoxy: UL 94V-0 Rate Flame Retardant
Lead: Axial Leads, Solderable per MIL-STD-202
method 208 Guaranteed
Polarity: Color Band Denotes Cathode End
Mounting Position: Any
REF.
A
B
C
D
H
D
G
E
F
PACKAGE INFORMATION
Package
SMA
MPQ
5K
Leader Size
13’ inch
Millimeter
Min.
Max.
1.25
1.65
3.99
4.60
2.50
2.90
1.98
2.44
REF.
E
F
G
H
Millimeter
Min.
Max.
0.051
0.203
4.78
5.28
0.76
1.52
0.152
0.305
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Average Forward Current @T
J
=25°C
Peak Forward Current @ 8.3 ms Half Sine
Maximum Instantaneous Forward
Voltage
I
FM
= 2.0 A, T
A
= 25°C
I
FM
= 2.0 A, T
A
= 75°C
I
FM
= 2.0 A, T
A
= 125°C
T
J
= 25°C
T
J
= 100°C
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
V
F
Rating
200
200
200
2
50
0.9
0.85
0.72
0.2
5
70
80
26
1000
-50~150
-65~150
Unit
V
V
V
A
A
V
Maximum DC Reverse Current At Rated DC
Blocking Voltage
4
Typical Junction Capacitance
1
Typical Thermal Resistance
2
I
R
C
J
R
θJA
R
θJC
dv / dt
T
J
T
STG
mA
pF
°C / W
°C / W
V /
μs
°C
°C
Typical Thermal Resistance
3
Voltage Rate of Chance (Rated V
R
)
Operating Temperature Range
Storage temperature
Notes:
1.
2.
3.
4.
Measured at 1MHz and applied reverse voltage of 5.0 V D.C.
Thermal Resistance Junction to Ambient.
Thermal Resistance Junction to Case.
Pulse test: 300us pulse width, 1% duty cycle
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Mar-2011 Rev. B
Page 1 of 2

 
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