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IRKT152/04PBF

产品描述Silicon Controlled Rectifier, 330A I(T)RMS, 400V V(DRM), 400V V(RRM), 2 Element, INT-A-PAK-7
产品类别模拟混合信号IC    触发装置   
文件大小164KB,共7页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 选型对比 全文预览

IRKT152/04PBF概述

Silicon Controlled Rectifier, 330A I(T)RMS, 400V V(DRM), 400V V(RRM), 2 Element, INT-A-PAK-7

IRKT152/04PBF规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Vishay(威世)
包装说明FLANGE MOUNT, R-XUFM-X7
针数7
Reach Compliance Codeunknown
外壳连接ISOLATED
配置SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大直流栅极触发电流150 mA
JESD-30 代码R-XUFM-X7
元件数量2
端子数量7
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大均方根通态电流330 A
断态重复峰值电压400 V
重复峰值反向电压400 V
表面贴装NO
端子形式UNSPECIFIED
端子位置UPPER
处于峰值回流温度下的最长时间NOT SPECIFIED
触发设备类型SCR

IRKT152/04PBF文档预览

Bulletin I27122 rev. D 11/04
IRKT152/04
THYRISTOR/ THYRISTOR
INT-A-pak
TM
Power Module
Features
Electrically Isolated by DBC Ceramic ( Al
2
O
3
)
3500 V
RMS
Isolating Voltage
Industrial Standard Package
High Surge Capability
Glass Passivated Chips
Simple Mounting
UL E78996 approved
150 A
Applications
Battery Charges
Welders
Power Converters
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
I
2
t
2
CASE STYLE NEW INT-A-PAK
Units
A
°C
A
IRKT152/04
150
85
330
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
4000
4200
80
73
800
400
- 40 to 150
- 40 to 125
KA
2
√s
V
°C
KA
2
s
I
√t
V
RRM
T
STG
range
T
J
range
www.irf.com
1
IRKT152/04
Bulletin I27122 rev. D 11/04
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
V
RRM
/V
DRM
, Maximum repetitive
peak reverse voltage
V
RSM
/V
DSM
, Maximum non-repetitive
peak reverse voltage
I
RRM /
I
DRM
@ 125°C
mA
50
V
IRKT152/04
400
V
500
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Case temperature
Maximum peak, one-cycle
on-state, non-repetitive
surge current
I
2
t
Maximum I
2
t for fusing
IRKT152/04
150
85
330
4000
4200
3350
3500
80
73
56
51
Units Conditions
A
°C
A
A
180° conduction half sine wave
as AC switch
t = 10ms
t = 10ms
KA
2
s
t = 10ms
t = 10ms
KA
√s
2
I
T(RMS)
Maximum RMS on-state current
I
TSM
No voltage
100% V
RRM
No voltage
100% V
RRM
Sine half wave,
Initial T
J
= T
J
max
t = 8.3ms reapplied
t = 8.3ms reapplied
t = 8.3ms reapplied
t = 8.3ms reapplied
t = 0.1 to 10ms, no voltage reapplied
@ T
J
max.
I
pk
=
Π
I
T (AV)
, T
J
= 25°C
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
T
J
= 25
o
C, anode supply = 6V, resistive load
V
mΩ
V
mA
I
√t
2
Maximum I
√t
for fusing
2
800
0.82
1.44
1.48
200
400
V
T(TO)
r
t
V
TM
I
H
I
L
Value of threshold voltage
On-state slope resistance
Maximum on-state voltage drop
Maximum Holding Current
Maximum Latching Current
Switching
t
gd
t
gr
t
q
Typical delay time
Typical rise time
Typical turn-off time
1
2
50 - 200
µs
T
J
= 25
o
C
T
J
= 25
o
C
Gate Current=1A dIg/dt=1A/µs
Vd=0,67% V
DRM
I
TM
= 300 A; -dI/dt = 15 A/µs; T
J
= T
J
max
V
r
= 50 V; dV/dt = 20 V/µs; Gate 0 V, 100Ω
Blocking
I
RRM
I
DRM
V
INS
Maximum peak reverse and
off-state leakage current
RMS isolation voltage
3500
1000
V
V/µs
50Hz, circuit to base, all terminals shorted, t = 1s
T
J
= T
J
max., exponential to 67% rated V
DRM
50
mA
T
J
= 125
o
C
dV/dt critical rate of rise of off-state voltage
2
www.irf.com
IRKT152/04
Bulletin I27122 rev. D 11/04
Triggering
Parameter
P
GM
I
GM
-V
GT
V
GT
Max. peak gate power
IRKT152/04
12
3
3
10
4
2.5
1.7
270
150
80
0.3
10
300
Units Conditions
W
W
A
V
V
T
J
= - 40°C
T
J
= 25°C
T
J
= T
J
max.
T
J
= - 40°C
mA
V
mA
A/µs
@ T
J
= T
J
max., I
TM
= 400A rated V
DRM
applied
T
J
= 25°C
T
J
= T
J
max.
@ T
J
= T
J
max., rated V
DRM
applied
Anode supply = 6V, resistive
load; Ra = 1Ω
Anode supply = 6V, resistive
load; Ra = 1Ω
tp
5ms, T
J
= T
J
max.
f=50Hz, T
J
= T
J
max.
tp
5ms, T
J
= T
J
max.
P
G(AV)
Max. average gate power
Max. peak gate current
Max. peak negative
gate voltage
Max. required DC gate
voltage to trigger
I
GT
Max. required DC gate
current to trigger
V
GD
I
GD
di/
dt
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Max. rate of rise of
turned-on current
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
R
thCS
T
wt
Max. junction operating
temperature range
Max. storage temperature
range
Max. thermal resistance,
junction to case
Max. thermal resistance,
case to heatsink
Mounting
IAP to heatsink
torque ± 10% busbar to IAP
Approximate weight
Case Style
IRKT152/04
-40 to 125
-40 to 150
0.18
0.05
4 to 6
4 to 6
200 (7.1)
New Int-A-Pak
Units Conditions
°C
°C
K/W
K/W
Nm
g(oz)
DC operation, per junction
Mounting surface smooth, flat and greased
Per module
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.
∆R
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
IRKT152/04
Sinusoidal conduction @ T
J
max.
180
o
Rectangular conduction @ T
J
max.
30
o
120
o
90
o
60
o
180
o
120
o
0.012
90
o
0.014
60
o
0.016
30
o
0.017
Units
K/W
0.007
0.010
0.013
0.016
0.017
0.009
www.irf.com
3
IRKT152/04
Bulletin I27122 rev. D 11/04
Ordering Information Table
Device Code
IRK
1
1
2
3
4
-
-
-
-
T
2
152
3
/
04
4
Module Type
Circuit Configuration
Current Rating
Voltage Rating (04 = 400V)
Outline Table
All dimensions are in millimeters
1
2
3
5 7
4 6
4
www.irf.com
IRKT152/04
Bulletin I27122 rev. D 11/04
Maximum Allowable Case Temperature (°C)
130
120
110
100
90
80
0
Maximum Allowable Case Temperature (°C)
IRKT152
RthJC (DC) = 0.182 K/W
130
120
110
100
90
80
70
60
0
IRKT152
RthJC (DC) = 0.182 K/W
Conduction Angle
Conduction Period
30˚
60˚
90˚
120˚
180˚
30˚
60˚
90˚
120˚
180˚
DC
20 40 60 80 100 120 140 160
Average On-state Current (A)
50
100
150
200
250
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
Fig. 1 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
220
200
180
160
140
120
100
80
60
40
20
0
0
180˚
120˚
90˚
60˚
30˚
RMS Limit
300
250
200
DC
180˚
120˚
90˚
60˚
30˚
150
RMS Limit
100
50
0
0
50
100
150
200
250
Average On-state Current (A)
Fig. 4 - Forward Power Loss Characteristics
Conduction Period
Conduction Angle
IRKT152
Tj = 125˚C
IRKT152
Tj = 125˚C
20 40 60 80 100 120 140 160
Average On-state Current (A)
Fig. 3 - Forward Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
3600
3400
3200
3000
2800
2600
2400
2200
2000
1800
1600
1
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
4500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
4000
Initial Tj = 125˚C
No Voltage Reapplied
3500
Rated Vrrm Reapplied
3000
2500
2000
IRKT152
Per Junction
IRKT152
Per Junction
10
100
1500
0.01
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig.5 - Maximum Non-Repetitive Surge Current
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
www.irf.com
5

IRKT152/04PBF相似产品对比

IRKT152/04PBF
描述 Silicon Controlled Rectifier, 330A I(T)RMS, 400V V(DRM), 400V V(RRM), 2 Element, INT-A-PAK-7
是否Rohs认证 符合
厂商名称 Vishay(威世)
包装说明 FLANGE MOUNT, R-XUFM-X7
针数 7
Reach Compliance Code unknown
外壳连接 ISOLATED
配置 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大直流栅极触发电流 150 mA
JESD-30 代码 R-XUFM-X7
元件数量 2
端子数量 7
封装主体材料 UNSPECIFIED
封装形状 RECTANGULAR
封装形式 FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED
认证状态 Not Qualified
最大均方根通态电流 330 A
断态重复峰值电压 400 V
重复峰值反向电压 400 V
表面贴装 NO
端子形式 UNSPECIFIED
端子位置 UPPER
处于峰值回流温度下的最长时间 NOT SPECIFIED
触发设备类型 SCR

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