SID9971
Elektronische Bauelemente
25A, 60V,R
DS(ON)
36 m
Ω
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SID9971 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-251 is universally preferred for all commercial-industrial
surface mount applications and
suited for low voltage applications
5.6
±0.2
6.6
±0.2
5.3
±0.2
TO-251
2.3
±0.1
0.5
±0.05
7.0
±0.2
such as DC/DC converters.
7.0
±0.2
1.2
±0.3
0.75
±0.15
Features
*
Low On-Resistance
*
Simple Drive Requirement
0.6
±0.1
2.3
REF.
0.5
±0.1
G
D
S
Dimensions in millimeters
D
G
Marking Code: 9971
XXXX(Date Code)
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,V
GS
@10V
Continuous Drain Current,V
GS
@10V
Pulsed Drain Current
1
Symbol
V
DS
V
GS
I
D
@T
C
=25
C
I
D
@T
C
=100
C
I
DM
P
D
@T
C
=25
C
o
o
o
Ratings
60
± 20
25
16
80
39
0.31
Unit
V
V
A
A
A
W
W/ C
o
o
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Symbol
Max.
Max.
Rthj-c
Rthj-a
Ratings
3.2
110
o
o
Unit
C /W
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
4
SID9971
Elektronische Bauelemente
25A, 60V,R
DS(ON)
36 m
Ω
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
C
)
Drain-Source Leakage Current(Tj=150
C
)
Static Drain-Source On-Resistance
o
o
o
Symbol
BV
DSS
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
Min.
60
_
Typ.
_
Max.
_
Unit
V
V/ C
V
nA
uA
uA
o
Test Condition
V
GS
=0V, I
D
=250uA
Reference to 25 C, I
D
=1mA
V
DS
=V
GS,
I
D
=250uA
V
GS
=
±
20V
V
DS
=60V,V
GS
=0
V
DS
=48V,V
GS
=0
V
GS
=10V, I
D
=18A
V
GS
=4.5V, I
D
=12A
o
0.05
_
_
_
_
_
_
_
1.0
_
_
_
_
3.0
±
100
1
25
36
50
30
_
_
R
D S (O N )
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Gfs
_
_
_
_
_
_
_
_
_
_
_
m
Ω
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
18
6
11
9
24
26
7
1700
160
110
17
nC
I
D
=18A
V
DS
=48V
V
GS
= 4.5V
_
_
_
_
V
DD
=30V
I
D
=18A
nS
V
GS
=10V
R
G
=3.3
Ω
R
D
=1.67
Ω
2700
_
_
pF
V
GS
=0V
V
DS
=25V
f=1.0MHz
_
_
S
V
DS
=10V, I
D
=18A
Source-Drain Diode
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Change
Symbol
V
SD
T
rr
Min.
_
_
Typ.
_
Max.
1.2
_
_
Unit
V
nS
nC
Test Condition
I
S
=25 A, V
GS
=0V.
I
S
=18A, V
GS
=0V.
dl/dt=100A/us
37
38
Q
rr
_
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width
≦
300us, dutycycle
≦
2%.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2
of 4
SID9971
Elektronische Bauelemente
25A, 60V,R
DS(ON)
36 m
Ω
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
http://www.SeCoSGmbH.com/
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v
.
s
.
J unction Temperature
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3
of 4
SID9971
Elektronische Bauelemente
25A, 60V,R
DS(ON)
36 m
Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4
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