Bulletin I27135 rev.C 09/97
IRKU/V71, 91 SERIES
THYRISTOR/ THYRISTOR
Features
Electrically isolated: DBC base plate
3500 V
RMS
isolating voltage
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
NEW ADD-A-pak
TM
Power Modules
75 A
95 A
Description
These IRKU/V series of NEW ADD-A-paks use
power thyristors in two circuit configurations. The
semiconductor chips are electrically isolated from
the base plate, allowing common heatsinks and
compact assemblies to be built. They can be
interconnected to form single phase bridges
(IRKU+IRKV) or 6-pulse midpoint connection
bridge. These modules are intended for general
purpose high voltage applications such as high
voltage regulated power supplies, battery charge
and DC motor speed control circuits.
Major Ratings and Characteristics
Parameters IRKU/V71 IRKU/V91
I
T(AV)
@ 85°C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
I
2
√t
V
RRM
range
T
STG
T
J
75
115
1665
1740
13.86
12.56
138.6
95
150
1785
1870
15.91
14.52
159.1
Units
A
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
o
400 to 1600
- 40 to 125
- 40 to125
C
C
o
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1
IRKU/V71, 91 Series
Bulletin I27135 rev.C 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
-
04
IRKU/V71, 91
08
12
16
V
RRM
, maximum
V
RSM
, maximum
V
DRM
, max. repetitive I
RRM
repetitive
non-repetitive
peak off-state voltage, I
DRM
peak reverse voltage peak reverse voltage
gate open circuit
125°C
V
400
800
1200
1600
V
500
900
1300
1700
V
400
800
1200
1600
mA
15
On-state Conduction
Parameters
I
T(AV)
Max. average on-state
current
I
T(RMS
)
Max. RMS on-state
current
@T
C
I
TSM
Max. peak, one cycle
non-repetitive on-state
current
115
80
1665
1740
1400
1470
1850
1940
I
2
t
Max. I
2
t for fusing
13.86
12.56
9.80
8.96
17.11
15.60
I
√t
2
IRKU/V71
75
IRKU/V91
95
Units
Conditions
180
o
conduction, half sine wave,
T
C
= 85
o
C
DC
A
150
75
1785
1870
1500
1570
2000
2100
15.91
14.52
11.25
10.27
20.00
18.30
159.1
0.80
0.85
2.40
2.25
1.58
KA
√s
2
°C
t=10ms No voltage
t=8.3ms reapplied
A
t=10ms 100% V
RRM
t=8.3ms reapplied
t=10ms T
J
= 25
o
C,
t=8.3ms no voltage reapplied
t=10ms No voltage
t=8.3ms reapplied
KA
2
s
t=10ms 100% V
RRM
t=8.3ms reapplied
t=10ms T
J
= 25
o
C,
t=8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied
Low level (3)
High level (4)
Low level (3)
High level (4)
I
TM
=
π
x I
T(AV)
I
FM
=
π
x I
F(AV)
T
J
= 25
o
C, from 0.67 V
DRM
,
I
TM
=π x I
T(AV)
,
I = 500mA,
g
Sinusoidal
half wave,
Initial T
J
= T
J
max.
Initial T
J
= T
J
max.
Max. I
√t
for fusing (1)
2
138.6
0.82
0.85
3.00
2.90
1.59
V
T(TO)
Max. value of threshold
voltage (2)
r
t
V
TM
di/dt
Max. value of on-state
slope resistance (2)
Max. peak on-state
voltage
Max. non-repetitive rate
of rise of turned on
current
I
H
I
L
Max. holding current
Max. latching current
V
mΩ
V
T
J
= T
J
max
T
J
= T
J
max
T
J
= 25
o
C
150
A/µs
t < 0.5 µs, t > 6 µs
r
p
200
400
T
J
= 25 C, anode supply = 6V,
o
mA
resistive load, gate open circuit
T
J
= 25
o
C, anode supply = 6V,resistive load
(1) I
2
t for time t = I
2
√t
x
√t
.
x
x
(3) 16.7%
x
π
x I
AV
< I <
π
x I
AV
(2) Average power =
V
T(TO)
x I
T(AV)
+
r
t
x
(
I
T(RMS)
)
2
(4)
I >
π
x I
AV
2
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IRKU/V71, 91 Series
Bulletin I27135 rev.C 09/97
Triggering
Parameters
P
GM
I
GM
Max. peak gate power
IRKU/V71
12
3.0
3.0
10
4.0
2.5
1.7
270
150
80
0.25
6
IRKU/V91
12
3.0
3.0
Units
W
A
Conditions
P
G(AV)
Max. average gate power
Max. peak gate current
gate voltage
V
GT
Max. gate voltage
required to trigger
I
GT
Max. gate current
required to trigger
V
GD
I
GD
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
-V
GM
Max. peak negative
V
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
mA
V
mA
T
J
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
Blocking
Parameters
I
RRM
I
DRM
Max. peak reverse and
off-state leakage current
at V
RRM
, V
DRM
2500 (1 min)
V
INS
RMS isolation voltage
3500 (1 sec)
500
V
50 Hz, circuit to base, all terminals
shorted
T
J
= 125
o
C, linear to 0.67 V
DRM
,
gate open circuit
15
mA
T
J
= 125
o
C, gate open circuit
IRKU/V71, 91
Units
Conditions
dv/dt Max. critical rate of rise
of off-state voltage (5)
V/µs
Thermal and Mechanical Specifications
Parameters
T
J
T
stg
Junction operating
temperature range
Storage temper. range
IRK.71
IRK.91
- 40 to 125
- 40 to 125
Units
Conditions
°C
R
thJC
Max. internal thermal
resistance, junction
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
busbar
wt
Approximate weight
Case style
0.1
5
Nm
3
83 (3)
TO-240AA
g (oz)
JEDEC
0.165
0.135
K/W
Mounting surface flat, smooth and greased.
Flatness
<
0.03 mm; roughness
<
0.02 mm
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
Per module, DC operation
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU91/16S90.
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3
IRKU/V71, 91 Series
Bulletin I27135 rev.C 09/97
∆R
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
IRKU/V71
IRKU/V91
Sine half wave conduction
180
o
0.06
0.04
120
o
0.07
0.05
90
o
0.09
0.06
60
o
0.12
0.08
30
o
0.18
0.12
180
o
0.04
0.03
Rect. wave conduction
120
o
0.08
0.05
90
o
0.10
0.06
60
o
0.13
0.08
30
o
0.18
Units
°C/W
0.12
Outlines Table
IRKU../.. (*)
IRKV../.. (*)
30 ± 0.5
(1.18 ± 0.02)
Screws M5 x 0.8
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
(1.18 ± 0.04)
30 ± 0.1
29 ± 0.5
(1.13 ± 0.02)
6.3 ± 0.3
(0.25 ± 0.01)
All dimensions in millimeters (inches)
(0.24 ± 0.01)
24 ± 0.5
5.8 ± 0.25
(0.94 ± 0.02)
(0.23 ± 0.01)
6.1 ± 0.3
20.5 ± 0.75
(0.81 ± 0.03)
1
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
80 ± 0.3
(0.59 ± 0.02)
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
(*)
For terminals connections, see Circuit Configurations Table
Circuit Configurations Table
IRKU
(1)
+
4 5
(2)
-
-
(3)
G1
K1
(4) (5)
K2
G2
(7) (6)
+
(3)
G1 K1
K2 G2
(4) (5)
(7) (6)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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Pitch 4.0 ± 0.2
(0.16 ± 0.01)
2
3
76
IRKV
(1)
-
+
(2)
IRKU/V71, 91 Series
Bulletin I27135 rev.C 09/97
Ordering Information Table
Device Code
IRK
1
1
2
3
4
5
-
-
-
-
-
Module type
U
2
91
3
/
16 S90
4
5
Circuit configuration (See Circuit Configuration Table)
Current code
Voltage code (See Voltage Ratings Table)
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
130
120
110
Conduction Angle
130
120
110
IRK.71.. Series
R
thJC
(DC) = 0.33 K/W
IRK.71.. Series
R
thJC
(DC) = 0.33 K/W
Conduction Period
100
90
80
70
0
10
20
30
40
50
60
70
80
Average On-state Current (A)
100
90
30°
80
70
0
20
40
60
80
100
120
Average On-state Current (A)
60°
90°
120°
180°
DC
30°
60°
90°
120°
180°
Fig. 1 - Current Ratings Characteristics
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
Average On-state Current (A)
180°
120°
90°
60°
30°
RMS Limit
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
140
120
100
80
Fig. 2 - Current Ratings Characteristics
DC
180°
120°
90°
60°
30°
RMS Limit
60
Conduction Period
Conduction Angle
40
20
0
0
20
40
60
80
100
120
Average On-state Current (A)
IRK.71.. Series
Per Junction
T
J
= 125°C
IRK.71.. Series
Per Junction
T
J
= 125°C
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
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