MAD1103 and MAD1103e3
Switching Diode Array
Steering Diode TVS Array
TM
SCOTTSDALE DIVISION
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated
junctions fabricated by a planar process and mounted in a 14-PIN package
for use as steering diodes protecting up to eight I/O ports from ESD, EFT,
or surge by directing them either to the positive side of the power supply
line or to ground (see figure 1). An external TVS diode may be added
between the positive supply line and ground to prevent overvoltage on the
supply rail. They may also be used in fast switching core-driver
applications. This includes computers and peripheral equipment such as
magnetic cores, thin-film memories, plated-wire memories, etc., as well as
decoding or encoding applications. These arrays offer many advantages of
integrated circuits such as high-density packaging and improved reliability.
This is a result of fewer pick and place operations, smaller footprint, smaller
weight, and elimination of various discrete packages that may not be as
user friendly in PC board mounting. They are available with either Tin-Lead
plating terminations or as RoHS Compliant with annealed matte-Tin finish
by adding an “e3“ suffix to the part number.
APPEARANCE
WWW .
Microsemi
.C
OM
Top Viewing Pin Layout
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
•
•
•
•
•
•
16 Diode Array / protects 8 lines
Molded 14-Pin Dual-In-Line Package
Low Capacitance 1.5 pF per diode
Switching speeds less than 5 ns
RoHS compliant devices available by adding “e3” suffix
IEC 61000-4 compatible
61000-4-2 (ESD): Air 15 kV, contact 8 kV
61000-4-4 (EFT): 40 A, 5/50 ns
61000-4-5 (surge): 12 A, 8/20
µs
APPLICATIONS / BENEFITS
•
Low capacitance steering diode protection for high
frequency data lines
•
RS-232 & RS-422 Interface Networks
•
Ethernet: 10 Base T
•
Computer I / O Ports
•
LAN
•
Switching Core Drivers
MAXIMUM RATINGS
•
•
•
•
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Forward Surge Current: 2 Amps (8.3 ms)
12 Amps (8/20
µs
)
Continuous Forward Current: 400 mA (one diode)
Power Dissipation (P
D
): 1500 mW (total)
Solder temperatures: 260°C for 10 s (maximum)
MECHANICAL AND PACKAGING
•
CASE: Void-free transfer molded thermosetting epoxy
body meeting UL94V-0 flammability classification
•
TERMINALS: Tin-Lead or RoHS Compliant annealed
matte-Tin plating solderable per MIL-STD-750 method
2026
•
MARKING: MSC logo, MAD1103 or MAD1103e3 and
date code. Pin #1 is to the left of the dot or indent on
top of package.
•
WEIGHT: 0.997 grams (approximate)
•
Carrier tubes: 25 pcs (Standard)
LEAKAGE
CURRENT
I
R
T
A
= 150°C
µA
@V
R
20
MAX
300
@V
R
20
CAPACITANCE
C
@0V
pF
TYP
1.5
REVERSE
RECOVERY
TIME
t
rr
ns
MAX
5.0
FORWARD
VOLTAGE
V
F
I
F
= 10 mA
V
MAX
1.00
FORWARD
VOLTAGE
V
F
I
F
= 100 mA
V
MAX
1.20
MAD1103
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified
BREAKDOWN
VOLTAGE
V
BR
@ I
BR
=100µA
V
MIN
MAD1103
MAD1103e3
90
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
V
MAX
75
LEAKAGE
CURRENT
I
R
T
A
= 25°C
µA
MAX
0.200
PART
NUMBER
Copyright
©
2005
6-28-2005 REV N
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
MAD1103 and MAD1103e3
Switching Diode Array
Steering Diode TVS Array
TM
SCOTTSDALE DIVISION
Symbol
V
BR
V
RWM
V
F
I
R
C
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
WWW .
Microsemi
.C
OM
OUTLINE AND CIRCUIT
Supply rail (+V
CC
)
I/O Port
GND (or -V
CC
)
STEERING DIODE APPLICATION
figure 1
INCHES
DIM
A
B
C
D
E
F
G
H
I
J
0.015
0.017
0.140
0.040
MIN
0.740
0.235
0.120
0.270
0.320
MAX
0.780
0.265
0.140
0.330
0.380
0.100 BSC
0.021
0.023
0.160
0.070
0.381
0.431
3.556
1.016
MILLIMETERS
MIN
18.80
5.969
3.048
6.858
8.128
MAX
19.81
6.731
3.556
8.382
9.652
2.540 BSC
0.533
0.584
4.064
1.778
MAD1103
OUTLINE
CIRCUIT CONFIGURATION
Copyright
©
2005
6-28-2005 REV N
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
