NBT-168
0
Typical Applications
• Active Amplifier in VCO Circuit
• Buffer Amplifier
• Gain Stage
MICROWAVE InGaP/GaAs DISCRETE HBT
DC TO 12GHz
Product Description
The NBT-168 discrete HBT is ideal for low-cost amplifier
and oscillator applications up to 12GHz. Low noise figure,
high gain, high current capability, and medium output give
this device high dynamic range and excellent linearity for
cascaded amplifier designs. This device is also ideally
suited for VCO/buffer amplifier applications. The NBT-168
is packaged in a low-cost, surface-mount ceramic pack-
age, providing ease of assembly for high-volume tape-
and-reel requirements. It is available in either packaged
or chip (NBT-168-D) form, where its gold metallization is
ideal for hybrid circuit designs.
2.94 min
3.28 max
Pin 1
Indicator
0.025 min
0.125 max
Pin 1
Indicator
RF OUT
Ground
RF OUT
0.50 nom
0.50 nom
1.00 min
1.50 max
HT
Lid ID
1.70 min
1.91 max
2.39 min
2.59 max
0.38 nom
Ground
0.98 min
1.02 max
0.37 min
0.63 max
All Dimensions in Millimeters
Notes:
1. Solder pads are coplanar to within ±0.025 mm.
2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm.
3. Mark to include two characters and dot to reference pin 1.
Optimum Technology Matching® Applied
Si BJT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Package Style: MPGA, Bowtie, 3x3, Ceramic
!
Si Bi-CMOS
InGaP/HBT
Features
• Reliable, Low-Cost HBT Design
• 26.0dB Gain@1.0GHz
• Positive Power Supply Operation
• 4-Finger Device for High-Current
Capability
Pin 1
Indicator
1
RF OUT
8
Ground
7
6
5
9
4
RF IN
2
3
Ground
• Low Noise Figure, 1.7dB@2.0GHz
Ordering Information
NBT-168
Microwave InGaP/GaAs Discrete HBT DC to 12GHz
NBT-168-T1 or -T3 Tape & Reel, 1000 or 3000 Pieces (respectively)
NBT-168-D
NBT-168 Chip Form (100 pieces minimum order)
NBT-168-E
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A3 021004
4-65
NBT-168
Absolute Maximum Ratings
Parameter
RF Input Power
Power Dissipation
V
CBO
V
CEO
V
EBO
Collector Current
Junction Temperature
Operating Temperature
Storage Temperature
Rating
+10
250
8
6
1.5
42
200
-45 to +85
-65 to +150
Unit
dBm
mW
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
V
mA
°C
°C
°C
Exceeding any one or a combination of these limits may cause permanent damage.
Parameter
Overall
Collector Cutoff Current, I
CBO
Emitter Cutoff Current, I
EBO
DC Current Gain, h
FE
Current Gain, H21
Small Signal Power Gain, S21
Noise Figure, NF
Reverse Isolation, S12
Specification
Min.
Typ.
Max.
0.1
0.1
130
Unit
µA
µA
dB
dB
dB
dB
Condition
V
C
=+3.9V, I
CC
=25mA, Z
0
=50Ω, T
A
=+25°C
V
CB
=5.0V, I
E
=0
V
EB
=1.0V, I
C
=0
V
CE
=4.0V, I
C
=25mA
V
CE
=4.0V, I
C
=25mA, 2GHz
f=1.0GHz
f=2.0GHz
f=1.0GHz
90
24
-30
110
20
26
1.7
-32
MTTF versus Temperature
@ V
CE
=3.9V, I
CC
=25mA
Case Temperature
Junction Temperature
MTTF
85
112
>1,000,000
277
°C
°C
hours
°C/W
Thermal Resistance, at any temperature (in
°C/Watt) can be estimated by the following
equation:
θ
JC
(°C/Watt)=277[T
J
(°C)/112]
Thermal Resistance
θ
JC
4-66
Rev A3 021004
NBT-168
Pin
1
2
3
4
Function
EMITTER
EMITTER
EMITTER
BASE
Description
For best high frequency performance, this should be grounded. For
best performance, keep traces physically short and connect immedi-
ately to ground plane.
Same as pin 2.
Same as pin 2.
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. Base bias network should provide 1.3V to the base
and be a current source sufficient to supply the correct base current
for the collector current set.
Same as pin 2.
Same as pin 2.
Same as pin 2.
Collector bias. Must provide collector voltage and current. Biasing is
accomplished with an external series resistor and choke inductor to
V
CC
. The resistor is selected to set the DC current into this pin at the
desired level. The resistor value is determined by the following equa-
tion:
Interface Schematic
5
6
7
8
EMITTER
EMITTER
EMITTER
COLLECTOR
(
V
CC
–
V
C
)
-
R
= ---------------------------
I
CC
COLLECTOR
BASE
9
EMITTER
Care should be taken to ensure the current through the devices never
exceeds the maximum datasheet setting. Additionally, care should be
taken to ensure the voltages between the collector and emitter (pins
3, 2 and 4), VCE is typically 3.5V to 4.0V. Because DC is present on
this pin, a DC blocking capacitor, suitable for the frequency of opera-
tion, should be used in most applications. The supply side of the bias
network should also be well bypassed.
Same as pin 2.
EMITTER
Rev A3 021004
4-67
NBT-168
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
V
BB
V
CC
R
CC
R
B1
L choke
L choke
(optional)
(optional)
Out
NBT-168
In
C block
V
BE
R
B2
C block
V
CE
Note: RF bypass circuitry omitted for simplicity.
Sales Criteria - Unpackaged Die
Die Sales Information
• All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die material shall be nego-
tiated on a case-by-case basis.
• Segmented die are selected for customer shipment in accordance with RFMD Document #6000152 - Die Product
Final Visual Inspection Criteria
1
.
• Segmented die has a minimum sales volume of 100 pieces per order. A maximum of 400 die per carrier is allow-
able.
Die Packaging
• All die are packaged in GelPak ESD protective containers with the following specification:
O.D.=2"X2", Capacity=400 Die (20X20 segments), Retention Level=High(X8).
• GelPak ESD protective containers are placed in a static shield bag. RFMD recommends that once the bag is
opened the GelPak/s should be stored in a controlled nitrogen environment. Do not press on the cover of a closed
GelPak, handle by the edges only. Do not vacuum seal bags containing GelPak containers.
• Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit
2
.
Package Storage
• Unit packages should be kept in a dry nitrogen environment for optimal assembly, performance, and reliability.
• Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit
2
.
Die Handling
• Proper ESD precautions must be taken when handling die material.
• Die should be handled using vacuum pick-up equipment, or handled along the long side with a sharp pair of twee-
zers. Do not touch die with any part of the body.
• When using automated pick-up and placement equipment, ensure that force impact is set correctly. Excessive force
may damage GaAs devices.
4-68
Rev A3 021004
NBT-168
Die Attach
• The die attach process mechanically attaches the die to the circuit substrate. In addition, the utilization of proper die
attach processes electrically connect the ground to the trace on which the chip is mounted. It also establishes the
thermal path by which heat can leave the chip.
• Die should be mounted to a clean, flat surface. Epoxy or eutectic die attach are both acceptable attachment meth-
ods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure
involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the sub-
strate.
• All connections should be made on the topside of the die. It is essential to performance that the backside be well
grounded and that the length of topside interconnects be minimized.
• Some die utilize vias for effective grounding. Care must be exercised when mounting die to preclude excess run-out
on the topside.
Die Wire Bonding
• Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are accept-
able practices for wire bonding.
• All bond wires should be made as short as possible.
Notes
RFMD Document #6000152 - Die Product Final Visual Inspection Criteria. This document provides guidance for die
inspection personnel to determine final visual acceptance of die product prior to shipping to customers.
takes precautions to ensure that die product is shipped in accordance with quality standards established to min-
imize material shift. However, due to the physical size of die-level product, RFMD does not guarantee that material will
not shift during transit, especially under extreme handling circumstances. Product replacement due to material shift will
be at the discretion of RFMD.
2
RFMD
1
Rev A3 021004
4-69
嵌入式系统
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