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RN1116FT(TE85L,F)

产品描述PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
产品类别分立半导体    晶体管   
文件大小187KB,共8页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
下载文档 详细参数 选型对比 全文预览

RN1116FT(TE85L,F)概述

PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR

RN1116FT(TE85L,F)规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Toshiba(东芝)
包装说明,
Reach Compliance Codeunknown
最大集电极电流 (IC)0.1 A
最小直流电流增益 (hFE)50
元件数量1
极性/信道类型NPN
最大功率耗散 (Abs)0.1 W
表面贴装YES
晶体管元件材料SILICON

文档预览

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RN1114FT~RN1118FT
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Built-in bias resistors
Enabling simplified circuit design
Enabling reduction in the quantity of parts and manufacturing process
Complementary to the RN2114FT to 2118FT
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1114FT
RN1115FT
RN1116FT
RN1117FT
RN1118FT
R
1
(kΩ)
1
2.2
4.7
10
47
R
2
(kΩ)
10
10
10
4.7
10
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1114FT to 1118FT
RN1114FT
RN1115FT
Emitter-base voltage
RN1116FT
RN1117FT
RN1118FT
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1114FT to 1118FT
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
5
6
7
15
25
100
100
150
−55
to 150
JEDEC
JEITA
TOSHIBA
2-1B1A
Weight: 2.2 mg (typ.)
Unit
V
V
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-04-06

RN1116FT(TE85L,F)相似产品对比

RN1116FT(TE85L,F) RN1117FT(TE85L) RN1114FT(TE85L,F) RN1114FT(TE85L) RN1115FT(TE85L,F) RN1118FT(TE85L)
描述 PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
是否Rohs认证 符合 不符合 符合 不符合 符合 不符合
Reach Compliance Code unknown unknown unknown unknown unknown unknown
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
最小直流电流增益 (hFE) 50 30 50 50 50 50
元件数量 1 1 1 1 1 1
极性/信道类型 NPN NPN NPN NPN NPN NPN
最大功率耗散 (Abs) 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W
表面贴装 YES YES YES YES YES YES
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches - 1 1 1 1 -

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