RN1114MFV∼RN1118MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1114MFV,RN1115MFV,RN1116MFV,RN1117MFV,RN1118MFV
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
0.8 ± 0.05
1.2 ± 0.05
0.4
0.22 ± 0.05
1.2 ± 0.05
0.32 ± 0.05
0.80 ± 0.05
Unit: mm
Complementary to RN2114MFV to RN2118MFV
1
1
3
2
0.13 ± 0.05
Equivalent Circuit and Bias Resister Values
Type No.
RN1114MFV
RN1115MFV
RN1116MFV
RN1117MFV
RN1118MFV
R1 (kΩ)
1
2.2
4.7
10
47
R2 (kΩ)
10
10
10
4.7
10
0.5 ± 0.05
0.4
1.BASE
VESM
JEDEC
JEITA
TOSHIBA
Weight: 1.5 mg (typ.)
2.EMITTER
3.COLLECTOR
―
―
2-1L1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1114MFV
to 1118MFV
RN1114MFV
RN1115MFV
Emitter-base voltage
RN1116MFV
RN1117MFV
RN1118MFV
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1114MFV
to 111M8FV
I
C
P
C
(Note 1)
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
5
6
7
15
25
100
150
150
−55
to 150
mA
mW
°C
°C
0.4mm
0.5mm
Unit
V
V
Land Pattern Example
V
0.45mm
0.45mm
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4
mm
×
25.4 mm
×
1.6 mm)
1
2010-04-06
RN1114MFV∼RN1118MFV
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off
current
RN1114MFV
to 1118MFV
RN1114MFV
RN1115MFV
Emitter cut-off current
RN1116MFV
RN1117MFV
RN1118MFV
RN1114MFV
DC current gain
to 16MFV, 18MFV
RN1117MFV
Collector-emitter
saturation voltage
RN1114MFV
to 1118MFV
RN1114MFV
RN1115MFV
Input voltage (ON)
RN1116MFV
RN1117MFV
RN1118MFV
RN1114MFV
RN1115MFV
Input voltage (OFF)
RN1116MFV
RN1117MFV
RN1118MFV
Transition frequency
Collector Output
capacitance
RN1114MFV
to 1118MFV
RN1114MFV
to 1118MFV
RN1114MFV
RN1115MFV
Input resistor
RN1116MFV
RN1117MFV
RN1118MFV
RN1114MFV
RN1115MFV
Resistor ratio
RN1116MFV
RN1117MFV
RN1118MFV
R1/R2
―
―
R1
―
―
f
T
C
ob
―
―
V
CE
= 10V, I
C
= 5mA
V
CB
= 10V, I
E
= 0,
f = 1MHz
V
I (OFF)
―
V
CE
= 5V, I
C
= 0.1mA
V
I (ON)
―
V
CE
= 0.2V, I
C
= 5mA
V
CE (sat)
―
I
C
= 5mA, I
B
= 0.25mA
h
FE
―
V
CE
= 5V, I
C
= 10mA
I
EBO
―
Symbol
I
CBO
I
CEO
Test
Circuit
―
Test Condition
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
EB
= 6V, I
C
= 0
V
EB
= 7V, I
C
= 0
V
EB
= 15V, I
C
= 0
V
EB
= 25V, I
C
= 0
Min
―
―
0.35
0.37
0.36
0.78
0.33
50
30
―
0.6
0.7
0.8
1.5
2.5
0.3
0.3
0.3
0.3
0.5
―
―
0.7
1.54
3.29
7
32.9
―
―
―
―
―
Typ.
―
―
―
―
―
―
―
―
―
0.1
―
―
―
―
―
―
―
―
―
―
250
3
1.0
2.2
4.7
10
47
0.1
0.22
0.47
2.13
4.7
Max
100
500
0.65
0.71
0.68
1.46
0.63
―
―
0.3
2.0
2.5
2.5
4.0
10
0.9
1.0
1.1
2.3
5.7
―
―
1.3
2.86
6.11
13
61.1
―
―
―
―
―
kΩ
MHz
pF
V
V
V
mA
Unit
nA
―
2
2010-04-06
RN1114MFV∼RN1118MFV
100
RN1114MFV
IC - V I(ON)
100
RN1115MFV
IC - V I(ON)
コレクタ電流
IC (mA)
COLLECTOR CURRENT IC (mA)
10
Ta = 100°C
-25
コレクタ電流
IC (mA)
COLLECTOR CURRENT IC (mA)
エミッタ接地
COMMON EMITTER
V
CE =
= 0.2V
V
CE
0.2 V
エミッタ接地
COMMON EMITTER
V
CE =
= 0.2V
V
CE
0.2 V
10
Ta = 100°C
-25
25
1
25
1
0.1
0.1
1
INPUT VOLTAGE
I(ON) ( V
(V)
入力オン 電圧
V
V
I
(ON)
)
IC - V I(ON)
10
0.1
0.1
1
INPUT VOLTAGE
I(ON) ( V
(V)
入力オン 電圧
V
V
I
(ON)
)
IC - V I(ON)
10
RN1116MFV
100
RN1117MFV
100
COLLECTOR CURRENT IC (mA)
コレクタ電流
IC (mA)
コレクタ電流
IC (mA)
COLLECTOR CURRENT IC (mA)
エミッタ接地
COMMON EMITTER
V CE =
V
VCE = 0.2
0.2V
エミッタ接地
COMMON EMITTER
V
V CE
0.2
0.2V
CE =
=
V
10
Ta = 100°C
-25
25
1
10
Ta = 100°C
-25
25
1
0.1
0.1
1
10
100
INPUT VOLTAGE
I(ON) ( V
(V)
入力オン 電圧
V
V
I
(ON)
)
0.1
0.1
1
10
100
INPUT VOLTAGE
I(ON) ( V
(V)
入力オン 電圧
V
V
I
(ON)
)
RN1118MFV
100
IC - V I(ON)
COLLECTOR CURRENT IC (mA)
コレクタ電流
IC (mA)
COMMON EMITTER
エミッタ接地
VCE = 0.2 V
V CE = 0.2V
10
Ta = 100°C
25
-25
1
0.1
1
10
INPUT VOLTAGE
I(ON) ( V )
入力オン 電圧
V
V
I
(ON) (V)
100
3
2010-04-06
RN1114MFV∼RN1118MFV
RN1114MFV
10000
IC - V I(OFF)
10000
RN1115MFV
IC - V I(OFF)
コレクタ電流
IC (μA)
COLLECTOR CURRENT IC (μA)
COLLECTOR CURRENT IC (μA)
コレクタ電流
IC (μA)
COMMON EMITTER
エミッタ接地
VCE =
=
V
V CE
5
5V
1000
Ta = 100°C
25
100
-25
1000
Ta = 100°C
25
-25
100
エミッタ接地
COMMON EMITTER
VCE =
V CE = 5V
5V
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE
I(OFF) ( V )
入力オフ電圧
V
V
I
(OFF) (V)
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE
I(OFF) ( V )
入力オフ電圧
V
V
I
(OFF) (V)
10000
RN1116MFV
IC - V I(OFF)
10000
RN1117MFV
IC - V I(OFF)
エミッタ接地
COMMON EMITTER
V CE =
VCE = 5 V
5V
COLLECTOR CURRENT IC (μA)
コレクタ電流
IC (μA)
COLLECTOR CURRENT IC (μA)
コレクタ電流
IC (μA)
エミッタ接地
COMMON EMITTER
VCE =
=
V
V CE
5
5V
1000
Ta = 100°C
25
-25
1000
Ta = 100°C
25
-25
100
100
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
INPUT VOLTAGE V
I
(OFF)
V )
入力オフ電圧
V I(OFF) (
(V)
10
0.8
1.2
1.6
2
2.4
2.8
INPUT VOLTAGE
I(OFF) ( V
(V)
入力オフ電圧
V
V
I
(OFF)
)
3.2
RN1118MFV
10000
IC - V I(OFF)
エミッタ接地
COMMON EMITTER
V
= 5
=
VCE
CE
V
5V
COLLECTOR CURRENT IC (μA)
コレクタ電流
IC (μA)
1000
Ta = 100°C
25
-25
100
10
1
2
3
4
5
6
INPUT VOLTAGE V
I
(OFF)
V )
入力オフ電圧
V I(OFF) (
(V)
4
2010-04-06
RN1114MFV∼RN1118MFV
RN1114MFV
1000
COMMON EMITTER
エミッタ接地
VCE = 5 V
V CE = 5V
hFE - IC
1000
RN1115MFV
hFE - IC
エミッタ接地
COMMON EMITTER
VCE = 5 V
V CE = 5V
直流電流増幅率
hFE
DC CURRENT GAIN hFE
直流電流増幅率
hFE
DC CURRENT GAIN hFE
100
Ta = 100°C
25
100
Ta = 100°C
25
-25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
コレクタ電流
IC (mA )
hFE - IC
100
10
1
10
COLLECTOR CURRENT IC (mA)
コレクタ電流
IC (mA )
hFE - IC
100
RN1116MFV
1000
RN1117MFV
1000
COMMON EMITTER
エミッタ接地
VCE = 5 V
V CE = 5V
COMMON EMITTER
エミッタ接地
VCE =
=
V
V CE
5
5V
直流電流増幅率
hFE
DC CURRENT GAIN
hFE
直流電流増幅率
hFE
DC CURRENT GAIN hFE
100
Ta = 100°C
25
-25
10
100
Ta = 100°C
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
コレクタ電流
IC (mA )
RN1118MFV
1000
COMMON EMITTER
エミッタ接地
VCE = 5 V
V CE = 5V
1
100
1
10
COLLECTOR CURRENT IC (mA)
コレクタ電流
IC (mA )
100
hFE - IC
直流電流増幅率
hFE
DC CURRENT GAIN hFE
100
Ta = 100°C
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
コレクタ電流
IC (mA )
100
5
2010-04-06
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