RN2221~RN2227
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2221,RN2222,RN2223
RN2224,RN2225,RN2226,RN2227
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
High current type (I
C(MAX)
=
−800mA)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Low V
CE (sat)
Complementary to RN1221~RN1227
Equivalent Circuit
Bias Resistor Values
Type No.
RN2221
RN2222
RN2223
RN2224
RN2225
RN2226
RN2227
R1 (kΩ)
1
2.2
4.7
10
0.47
1
2.2
R2 (kΩ)
1
2.2
4.7
10
10
10
10
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2221~2227
RN2221~2224
Emitter-base voltage
RN2225, 2226
RN2227
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2221~2227
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−10
−5
−6
−800
300
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
RN2221~RN2227
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
RN2221~2227
RN2221
RN2222
RN2223
Emitter cut-off current
RN2224
RN2225
RN2226
RN2227
RN2221
RN2222
RN2223
DC current gain
RN2224
RN2225
RN2226
RN2227
Collector-emitter
saturation voltage
RN2221
RN2222~2227
RN2221
RN2222
RN2223
Input voltage (ON)
RN2224
RN2225
RN2226
RN2227
RN2221~2224
Input voltage (OFF)
Translation frequency
Collector output
capacitance
RN2225, 2226
RN2227
RN2221~2227
RN2221~2227
RN2221
RN2222
RN2223
Input resistor
RN2224
RN2225
RN2226
RN2227
RN2221~2224
Resistor ratio
RN2225
RN2226
RN2227
R1/R2
R1
f
T
C
ob
V
I (OFF)
V
I (ON)
V
CE (sat)
h
FE
I
EBO
Symbol
Test
Circuit
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
V
CE
=
−5V,
I
C
=
−0.1mA
V
CE
=
−5V,
I
C
=
−20mA
V
CB
=
−10V,
I
E
= 0
f = 1MHz
V
CE
=
−0.2V
I
C
=
−100mA
I
C
=
−50mA,
I
B
=
−2mA
I
C
=
−50mA,
I
B
=
−1mA
V
CE
=
−1V,
I
C
=
−100mA
V
EB
=
−5V,
I
C
= 0
V
EB
=
−6V,
I
C
= 0
V
EB
=
−10V,
I
E
= 0
Test Condition
V
CB
=
−50V,
I
E
= 0
V
CE
=
−50V,
I
B
= 0
Min
―
―
−3.85
−1.75
−0.82
−0.38
−0.365
−0.35
−0.378
60
65
70
90
90
90
90
―
−1.0
−1.4
−2.0
−3.0
−0.6
−0.7
−1.0
−0.8
−0.4
−0.5
―
―
0.7
1.54
3.29
7
0.329
0.7
1.54
0.9
0.0423
0.09
0.2
Typ.
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
200
13
1.0
2.2
4.7
10
0.47
1.0
2.2
1.0
0.047
0.1
0.22
Max
−100
−500
−7.14
−3.25
−1.52
−0.71
−0.682
−0.65
−0.703
―
―
―
―
―
―
―
−0.25
−3.5
−4.5
−6.5
−12.0
−2.0
−2.5
−3.0
−1.3
−0.8
−1.0
―
―
1.3
2.86
6.11
13
0.61
1.3
2.86
1.1
0.0517
0.11
0.24
―
kΩ
MHz
pF
V
V
V
―
mA
Unit
nA
―
―
2
2007-11-01
RN2221~RN2227
3
2007-11-01
RN2221~RN2227
4
2007-11-01
RN2221~RN2227
5
2007-11-01
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
