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RD20MB

产品描述Zener Diode, 19.97V V(Z), 5.56%, 0.2W, Silicon, Unidirectional, MINIMOLD, SC-59, 3 PIN
产品类别分立半导体    二极管   
文件大小135KB,共8页
制造商NEC(日电)
下载文档 详细参数 全文预览

RD20MB概述

Zener Diode, 19.97V V(Z), 5.56%, 0.2W, Silicon, Unidirectional, MINIMOLD, SC-59, 3 PIN

RD20MB规格参数

参数名称属性值
厂商名称NEC(日电)
包装说明R-PDSO-G3
Reach Compliance Codeunknown
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
最高工作温度125 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性UNIDIRECTIONAL
最大功率耗散0.2 W
认证状态Not Qualified
标称参考电压19.97 V
最大反向电流2 µA
表面贴装YES
技术ZENER
端子形式GULL WING
端子位置DUAL
最大电压容差5.56%
工作测试电流5 mA

文档预览

下载PDF文档
DATA SHEET
RD2.0M to RD47M
ZENER DIODES
200 mW 3-PIN MINI MOLD
ZENER DIODES
DESCRIPTION
Type RD2.0M to RD47M Series are planar type zener diodes
processing an allowable power dissipation of 200 mW.
<R>
PACKAGE DIMENSIONS (Unit: mm)
2.8 ± 0.2
0.4
+0.1
–0.05
1.5
0.65
–0.15
+0.1
FEATURES
• Planar process
• V
Z
; Applied E24 standard.
2.9 ± 0.2
0.95
0.95
2
3
Circuits for,
Constant Voltage, Constant Current,
Waveform clipper, Surge absorber, etc.
<R>
0.3
1.1 to 1.4
Marking
0.16
+0.1
–0.06
MAXIMUM RATINGS (T
A
= 25°C)
Power Dissipation
Forward Current
Junction Temperature
Storage Temperature
Peak Reverse Power
P
I
F
T
j
T
stg
P
RSM
200
100
150
−55
to +150
100
mW
mA
°C
°C
W (t
T
= 10
μs)
1 . NC
2 . Anode : A SC-59 (JEITA)
3 . Cathode: K
A
2
0 to 0.1
+0.1
APPLICATIONS
1
0.4
–0.05
K
3
1
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14716EJ7V0DS00 (7th edition)
Date Published March 2006 NS CP(K)
Printed in Japan
1995
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

 
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