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HS12230_11

产品描述120 A, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小116KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
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HS12230_11概述

120 A, SILICON, RECTIFIER DIODE

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120 Amp Schottky Rectifier
HS12230
Std. Polarity
Base is cathode
Rev. Polarity
Base is anode
A
B
C
D
E
F
G
H
J
K
L
G
J
D
Dim. Inches
Millimeter
Minimum Maximum Minimum Maximum Notes
1.52
.725
.605
1.182
.745
.152
.525
.156
.495
.120
38.61
1.56
18.42
.775
15.37
.625
30.02
1.192
18.92
.755
3.86
.160
1/4-20 UNC-2B
13.34
.580
3.96
.160
12.57
.505
3.05
.130
39.62
19.69
15.88
30.28
19.18
4.06
14.73
4.06
12.83
3.30
B
K
H
E
F
C
Sq.
Dia.
Dia.
A
L
HALF-PAK
Repetitive Peak
Reverse Voltage
30V
Schottky Barrier Rectifier
Guard Ring Protection
Low Forward Voltage
150°C Junction Temperature
VRRM 30 Volts
Reverse Energy Tested
ROHS Compliant
Microsemi
Catalog Number
HS12230*
Industry
Part Number
122NQ030
Working Peak
Reverse Voltage
30V
*Add Suffix R for Reverse Polarity
Electrical Characteristics
Average forward current
Maximum surge current
Maximum repetitive reverse current
Max peak forward voltage
Max peak forward voltage
Max peak reverse current
Max peak reverse current
Typical junction capacitance
I F(AV)
I FSM
I R(OV)
VFM
VFM
I RM
I RM
CJ
120 Amps
2000 Amps
2 Amps
0.49 Volts
0.55 Volts
2.0 Amp
5mA
5500pF
TC = 108°C, Square wave, R 0JC = 0.4°C/W
8.3ms, half sine, T J = 125°C
f = 1 KHZ, 1 ,T J = 25°C
I FM = 120A: T J = 125°C*
I FM = 120A: T J = 25°C*
VRRM, T J = 125°C*
VRRM, T J = 25°C
VR = 5.0V, T J = 25°C, f = 1MHz
*Pulse test: Pulse width 300µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operating junction temp range
Max thermal resistance
Typical thermal resistance (greased)
Terminal Torque
Mounting Base Torque
Weight
T STG
TJ
R OJC
R OCS
-55°C to 175°C
-55°C to 150°C
junction to case
0.4°C/W
0.12°C/W case to sink
35-40 inch pounds
20-25 inch pounds
1.1 ounces (32 grams) typical
www.microsemi.com
January, 2011 - Rev. 5

HS12230_11相似产品对比

HS12230_11 122NQ030 HS12230
描述 120 A, SILICON, RECTIFIER DIODE 120 A, SILICON, RECTIFIER DIODE 120 A, 30 V, SILICON, RECTIFIER DIODE
是否Rohs认证 - 不符合 不符合
包装说明 - HALF-PAK-1 HALF-PAK-1
针数 - 1 1
Reach Compliance Code - compliant unknow
ECCN代码 - EAR99 EAR99
应用 - GENERAL PURPOSE GENERAL PURPOSE
外壳连接 - CATHODE CATHODE
配置 - SINGLE SINGLE
二极管元件材料 - SILICON SILICON
二极管类型 - RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 - R-XUFM-X1 R-XUFM-X1
最大非重复峰值正向电流 - 2000 A 2000 A
元件数量 - 1 1
相数 - 1 1
端子数量 - 1 1
最大输出电流 - 120 A 120 A
封装主体材料 - UNSPECIFIED UNSPECIFIED
封装形状 - RECTANGULAR RECTANGULAR
封装形式 - FLANGE MOUNT FLANGE MOUNT
认证状态 - Not Qualified Not Qualified
最大重复峰值反向电压 - 30 V 30 V
表面贴装 - NO NO
技术 - SCHOTTKY SCHOTTKY
端子形式 - UNSPECIFIED UNSPECIFIED
端子位置 - UPPER UPPER

 
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