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HV400MJ/883

产品描述35A BUF OR INV BASED MOSFET DRIVER, CDIP8, SIDE BRAZED, METAL SEALED, CERAMIC, DIP-8
产品类别模拟混合信号IC    驱动程序和接口   
文件大小130KB,共11页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
下载文档 详细参数 全文预览

HV400MJ/883概述

35A BUF OR INV BASED MOSFET DRIVER, CDIP8, SIDE BRAZED, METAL SEALED, CERAMIC, DIP-8

HV400MJ/883规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Renesas(瑞萨电子)
零件包装代码DIP
包装说明DIP, DIP8,.3
针数8
Reach Compliance Codenot_compliant
ECCN代码EAR99
高边驱动器YES
接口集成电路类型BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码R-CDIP-T8
JESD-609代码e0
功能数量1
端子数量8
最高工作温度125 °C
最低工作温度-55 °C
标称输出峰值电流35 A
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码DIP
封装等效代码DIP8,.3
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)NOT SPECIFIED
电源20 V
认证状态Not Qualified
筛选级别MIL-STD-883
座面最大高度5.08 mm
最大供电电压35 V
最小供电电压10 V
标称供电电压15 V
表面贴装NO
技术BIPOLAR
温度等级MILITARY
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
断开时间0.016 µs
接通时间0.013 µs
宽度7.62 mm

HV400MJ/883文档预览

HV400MJ/883
August 1997
High Current MOSFET Driver
Description
The HV400MJ/883 is a single monolithic, non-inverting high
current driver designed to drive large capacitive loads at high
slew rates. The device is optimized for driving single or paral-
lel connected N-Channel power MOSFETs with total gate
charge from 5nC to >1000nC. It features two output stages
pinned out separately allowing independent control of the
MOSFET gate rise and fall times. The current sourcing output
stage is an NPN capable of 6A. An SCR provides over 30A of
current sinking. The HV400MJ/883 achieves rise and fall
times of 54ns and 16ns respectively driving a 10,000pF load.
Special features are included in this part to provide a simple,
high speed gate drive circuit for power MOSFETs. The
HV400MJ/883 requires no quiescent supply current, how-
ever, the input current is approximately 15mA while in the
high state. With the internal current steering diodes (Pin 7)
and an external capacitor, both the timing and MOSFET gate
power come from the same pulse transformer; no special
external supply is required for high side switches. No high
voltage diode is required to charge the bootstrap capacitor.
The HV400MJ/883 in combination with the MOSFET and
pulse transformer makes an isolated power switch building
block for applications such as high side switches, secondary
side regulation and synchronous rectification. The
HV400MJ/883 is also suitable for driving IGBTs, MCTs,
BJTs and small GTOs.
The HV400MJ/883 is a type of buffer; it does not have input
logic level switching threshold voltages. This single stage
design achieves propagation delays of 20ns. The output
NPN begins to source current when the voltage on Pin 2 is
approximately 2V more positive than the voltage at Pin 8.
The output SCR switches on when the input Pin 2 is 1V
more negative than the voltage at Pins 3/6. Due to the use of
the SCR for current sinking, once the output switches low,
the input must not go high again until all the internal SCR
charge has dissipated, 0.5µs - 1.5µs later.
Features
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Fast Fall Times . . . . . . . . . . . . . . . . . . .16ns at 10,000pF
• No Supply Current in Quiescent State
• Peak Source Current . . . . . . . . . . . . . . . . . . . . . . . . . .6A
• Peak Sink Current . . . . . . . . . . . . . . . . . . . . . . . . . . .30A
• High Frequency Operation . . . . . . . . . . . . . . . . . 300kHz
Applications
• Switch Mode Power Supplies
• DC/DC Converters
• Motor Controllers
• Uninterruptable Power Supplies
Ordering Information
PART NUMBER
HV400MJ/883
TEMP.
RANGE (
o
C)
-55 to 125
PACKAGE
8 Ld SBDIP
PKG.
NO.
D8.3
Pinout
HV400MJ/883 (SBDIP)
TOP VIEW
Schematic
PIN 1
PIN 2
D3
D2
Q1
D1
PIN 8
PIN 7
PIN 3
D4
D8
R4
R2
PIN 6
V+ SUPPLY 1
INPUT 2
SINK OUTPUT 3
GND 4
8
7
6
5
SOURCE OUTPUT
DIODES
SINK OUTPUT
GND
Q2
R3
PIN 4
D6
R1
SCR
D7
PIN 5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
File Number
3584.2
1
HV400MJ/883
Absolute Maximum Ratings
Voltage Between Pin 1 and Pins 4/5 . . . . . . . . . . . . . . . . . . . . . 35V
Input Voltage Pin 7 (Max) . . . . . . . . . . . . . . . . . . . . . . . .Pin 1 + 1.5V
Input Voltage Pin 7 (Min) . . . . . . . . . . . . . . . . . . . . . . . Pin 4/5 -1.5V
Input Voltage Pin 2 to Pin 4/5
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35V
Input Voltage Pin 2 to Pin 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . .-35V
Maximum Clamp Current (Pin 7)
. . . . . . . . . . . . . . . . . . . . . . . .±300mA
Thermal Information
Thermal Resistance (Typical, Note 1)
θ
JA
(
o
C/W)
θ
JC
(
o
C/W)
SBDIP Package . . . . . . . . . . . . . . . . . .
91
25
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . 200
o
C
Maximum Storage Temperature Range . . . . . . -65
o
C < T
A
< 150
o
C
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to 125
o
C
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +10V to +35V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: Supply Voltage = +15V, Unless Otherwise Specified
PARAMETER
Input High Differential
Voltage (Pin 2 - Pin 8)
SYMBOL
V
IH
CONDITIONS
V
OUT
= 0V,
I
OUT
HI = 10mA
GROUP A
SUBGROUP
1
2
3
Input Low Differential
Voltage (Pin 2 - Pin 3/6)
V
IL
V
OUT
= 12V,
I
OUT
LO = -3mA
1
2
3
Input High Current
I
IH
V
PIN 1, 2
= 30V,
I
SOURCE
= 0
1
2
3
Input Low Current
I
IL
V
PIN 2
= -30V
1
2, 3
High Output Voltage
V
OH
V
IN
= +V, I
OUT
= 150mA
1
2
3
Output Low Leakage
I
OL
V
OUT
= 0V, V
IN
= 0V
1
2, 3
Low Output Voltage
V
OL
V
IN
= 0V, I
OUT
= -150mA
1
2
3
Output High Leakage
I
OH
V
IN
= 15V
1
2
3
Forward Voltage
V
F
I
D
= 100mA
1
2
3
Reverse Leakage Current
I
R
V
R
= 30V
1
2, 3
TEMPERATURE
(
o
C)
25
125
-55
25
125
-55
25
125
-55
25
125, -55
25
125
-55
25
125, -55
25
125
-55
25
125
-55
25
125
-55
25
125, -55
MIN
0.6
0.1
1.0
-1.1
-0.95
-1.2
15.0
13.0
18.0
-80
-80
12.1
12.2
11.0
-1.0
-1.0
0.8
0.65
0.9
-1.0
-1.0
-1.0
0.8
0.8
0.8
-1.0
-1.0
MAX
2.8
2.3
3.2
-0.8
-0.6
-0.9
20.0
18.0
25.0
1.0
1.0
13.4
13.5
13.0
50
60
1.0
0.85
1.1
2.0
100
2.0
1.4
1.25
1.6
1.0
1.0
UNITS
V
V
V
V
V
V
mA
mA
mA
µA
µA
V
V
V
µA
µA
V
V
V
µA
µA
µA
V
V
V
µA
µA
2
HV400MJ/883
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
This Table Intentionally Left Blank. See AC Parameter on Table 3.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: Supply Voltage =
±15V,
Unless Otherwise Specified (Note 2)
PARAMETER
Input High Current fPeak
SYMBOL
I
IHP
I
OP8
I
OP6
Q
RR
t
r
t
f
t
DR
t
DF
t
OR
CONDITIONS
I
SOURCE
= 6A, 1µs Pulse, V
IN
= 9V,
V
OUT
= 0V
V
IN
= 9V, 1µs Pulse, V
OUT
= 0
V
IN
= 9V, 1µs Pulse, V
OUT
= 0
I
D
= 100mA
See Switching Diagram and Test Circuit
See Switching Diagram and Test Circuit
See Switching Diagram and Test Circuit
See Switching Diagram and Test Circuit
See Switching Diagram and Test Circuit
TEMPERATURE
(
o
C)
25
MIN
500
MAX
900
UNITS
mA
Peak Output Current
Peak Output Current
Diode (Pin 7) Stored Charge
Rise Time
Fall Time
Delay Time (Lo to Hi)
Delay Time (Hi to Lo)
Minimum Off Time
NOTE:
25
25
25
25
25
25
25
25
4
25
6
37
14
6
7
400
8
35
7
62
21
13
16
1140
A
A
nC
ns
ns
ns
ns
ns
2. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
3. PDA applies to Subgroup 1 only. No other subgroups are included in PDA.
SUBGROUPS (SEE TABLES 1 AND 2)
1
1 (Note 3), 2
1, 2
1
3
HV400MJ/883
Test Descriptions
SYMBOL
DC INPUT PARAMETERS
V
IH
V
IL
I
IH
I
IHP
I
IL
The differential voltage between the input (pin 2) to the output (pin 8) required to source 10mA
The differential voltage between the input (pin 2) to the output (pins 3, 6) required to sink 3mA
The current required to maintain the input (pin 2) high with I
OUT
= 0A
The input (pin 2) current for a given pulsed output current
The current require to maintain the input (pin 2) low
DESCRIPTION
DC OUTPUT PARAMETERS
V
OH
I
OP8
I
OL
V
OL
I
OP6
I
OH
V
F
I
R
Q
RR
The output (pin 8) voltage with input (pin 2) = V+
The pulsed peak source current form output (pin 8)
The output (pin 8) leakage current with the input (pin 2) = Ground
The output (pins 3, 6) voltage with the input (pin 2) = Ground
The pulsed peak sink current into output (pins 3, 6)
The output (pins 3, 6) leakage current with the input (pin 2) = V+
The forward voltage of diode D1 or D7
The reverse leakage current of diode D1 or D7
The time integral of the reverse current at turn off
AC PARAMETERS
(See Switching Time Specifications)
T
R
T
F
T
DR
T
DF
T
OR
The low to high transition of the output
The high to low transition of the output
The output propagation delay from the input (pin 2) rising edge
The output propagation delay from the input (pin 2) falling edge
The minimum time required after an output high to low transition before the next input low to high transition
4
HV400MJ/883
Switching Diagram and Test Circuit
90%
INPUT
0V
V
OUT
OUTPUT
10%
10%
t
DR
t
r
90%
t
DF
t
f
90%
t
OR
10%
10%
FIGURE 1.
+V
C1
330µF
50V
R1 100 1W
1
1N914
7
C2
1.0µF
50V
8
2
15V
GND
INPUT
50Ω SOURCE
(RISE AND FALL TIMES <10ns)
3 AND 6
C
L
0.01µF
CHIP
CAP
R
L
100K
OUTPUT
12.8V
0.9V
4
5
FIGURE 2.
5

 
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