MMSZ4681 thru MMSZ4717
New Product
Vishay Semiconductors
formerly General Semiconductor
V
Z
Range
2.4 to 43V
Power Dissipation
500mW
Zener Diodes
SOD-123
.022 (0.55)
Cathode Band
.152 (3.85)
.140 (3.55)
.112 (2.85)
.100 (2.55)
Mounting Pad Layout
0.055 (1.40)
0.055 (1.40)
Top View
Dimensions in inches
and (millimeters)
0.094 (2.40)
.010 (0.25)
min.
.006 (0.15)
max.
.004 (0.1)
max.
.067 (1.70)
.055 (1.40)
.053 (1.35)
max.
Mechanical Data
Case:
SOD-123 Plastic Case
Weight:
approx. 0.01 grams
Packaging codes/options:
D3/10K per 13” reel (8mm tape), 30K/box
D4/3K per 7” reel (8mm tape), 30K/box
Features
• Silicon Planar Zener Diodes.
• Standard Zener voltage tolerance is ±5%. Other
tolerances are available upon request.
• High temperature soldering guaranteed:
250˚C/10 seconds set terminals.
• These diodes are also available in DO-35 case
with the type designation 1N4681...1N4717 and
SOT-23 case with the type designation
MMBZ4681... MMBZ4717.
Maximum Ratings and Thermal Characteristics
Parameter
Zener Current (see Table “Characteristics”)
Power Dissipation at T
L
= 75°C
Thermal Resistance Junction to Ambient Air
Maximum Junction Temperature
Storage Temperature Range
Notes:
(1) On FR-4 or FR-5 board with minimum recommended solder pad layout.
(T
A
= 25°C unless otherwise noted)
Symbol
Value
500
(1)
340
(1)
150
–55 to +150
Unit
P
tot
R
ΘJA
T
j
T
S
mW
°C/W
°C
°C
Document Number 88362
01-May-02
www.vishay.com
1
MMSZ4681 thru MMSZ4717
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Maximum V
F
= 0.9 V at I
F
= 10 mA
Zener Voltage
(1)
V
Z
@ I
ZT
=
50µA (Volts)
Type
Marking
Code
Nominal
MMSZ4681
MMSZ4682
MMSZ4683
MMSZ4684
MMSZ4685
MMSZ4686
MMSZ4687
MMSZ4688
MMSZ4689
MMSZ4690
MMSZ4691
MMSZ4692
MMSZ4693
MMSZ4694
MMSZ4695
MMSZ4696
MMSZ4697
MMSZ4698
MMSZ4699
MMSZ4700
MMSZ4701
MMSZ4702
MMSZ4703
MMSZ4704
MMSZ4705
MMSZ4706
MMSZ4707
MMSZ4708
MMSZ4709
MMSZ4710
MMSZ4711
MMSZ4712
MMSZ4713
MMSZ4714
MMSZ4715
MMSZ4716
MMSZ4717
CF
CH
CJ
CK
CM
CN
CP
CT
CU
CV
CA
CX
CY
CZ
DC
DD
DE
DF
DH
DJ
DK
DM
DN
DP
DT
DU
DV
DA
DZ
DY
EA
EC
ED
EE
EF
EH
EJ
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
27.0
28.0
30.0
33.0
36.0
39.0
43.0
Min
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.27
8.65
9.50
10.5
11.4
12.4
13.3
14.3
15.2
16.2
17.1
18.1
19.0
20.9
22.8
23.8
25.7
26.6
28.5
31.4
34.2
37.1
40.9
Max
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.14
9.56
10.5
11.6
12.6
13.7
14.7
15.8
16.8
17.9
18.9
20.0
21.0
23.1
25.2
26.3
28.4
29.4
31.5
34.7
37.8
41.0
45.2
Max Reverse
Current
I
R
(µA)
2.00
1.00
0.80
7.50
7.50
5.00
4.00
10.0
10.0
10.0
10.0
10.0
10.0
1.00
1.00
1.00
1.00
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
Test Voltage
V
R
(Volts)
1.0
1.0
1.0
1.5
2.0
2.0
2.0
3.0
3.0
4.0
5.0
5.1
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.8
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19.0
20.4
21.2
22.8
25.0
27.3
29.6
32.6
Notes:
(1) Measured with device junction in thermal equilibrium
www.vishay.com
2
Document Number 88362
01-May-02
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
