1002MP
2 Watts, 35 Volts
Pulsed Avionics at 960-1215 MHz
GENERAL DESCRIPTION
The 1002MP is a COMMON BASE transistor capable of providing 2 Watts of
pulsed RF output power in the band 960 to 1215 MHz. This transistor is
specifically designed for pulsed Avionics amplifier applications. It utilizes gold
metallization and low thermal resistance packaging to provide high reliability
and supreme ruggedness.
CASE OUTLINE
55FW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C
7
Maximum Voltage and Current
50
Collector to Base Voltage (BV
ces
)
Emitter to Base Voltage (BV
ebo
)
3.5
Collector Current (I
c
)
250
Maximum Temperatures
Storage Temperature
-40 to +150
Operating Junction Temperature
+200
W
V
V
mA
°C
°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
P
out
P
in
P
g
η
c
VSWR
CHARACTERISTICS
Power Output
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 1150 MHz
V
cc
= 35 Volts
Pulse width = 20 µs
LTDF = 1%
MIN
2.0
8.24
TYP
4
0.3
11
45
10:1
MAX
UNITS
W
W
dB
%
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
BV
ces
h
FE
C
ob
θjc
1
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Capacitance
Thermal Resistance
Ie = 1 mA
Ic = 5 mA
Vce = 5V, Ic = 100 mA
Vcb=35V, f=1MHz
3.5
50
20
2.2
5.0
25
V
V
pF
°C/W
Rev B: August 2010
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at
www.microsemi.com
or contact our factory direct.
1002MP
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at
www.microsemi.com
or contact our factory direct.
1002MP
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at
www.microsemi.com
or contact our factory direct.
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