BCPA14
Elektronische Bauelemente
RoHS Compliant Product
NPN Silicon
Epitaxial Planar Transistor
SOT-89
Description
The BCPA14
is a Darlington amplifier transistor designed
for applications requiring exremely high current gain.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at T
A
=25 C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current
Total Power Dissipation
Operating Junction and Storage Temperature Range
o
Symbol
V
CBO
V
CEO
V
E BO
I
C
P
D
Tj, Tstg
Ratings
30
30
10
500
1.0
-55~+150
Unit
V
V
V
mA
W
o
C
ELECTRICAL CHARACTERISTICS (Tamb=25
o
C)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Voltage, On
DC Current Gain
DC Current Gain
Transition Frequency
*Pulse Test: Pulse Width
≦
380us, Duty Cycle 2%
≦
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
Min.
30
30
10
-
Typ. Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
nA
nA
pF
V
V
100
100
6
1.5
2.0
-
-
-
Cob
*V
CE(sat)
*V
BE(on)
*h
FE1
*h
FE2
f
T
-
-
-
-
10K
20K
125
I
C
=100u A, I
E
=0
I
C
= 100uA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=10V, I
C
=0
Test Conditions
MHz
V
CB
=10V,f=1MHz,I
E
=0
I
C
=100mA, I
B
=0.1mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA, f=100MHz
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
BCPA14
NPN Silicon
Epitaxial Planar Transistor
Characteristics Curve
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2
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